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SIZF916DT-T1-GE3

SIZF916DT-T1-GE3
Mfr. #:
SIZF916DT-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIZF916DT-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZF916DT-T1-GE3 DatasheetSIZF916DT-T1-GE3 Datasheet (P4-P6)SIZF916DT-T1-GE3 Datasheet (P7-P9)SIZF916DT-T1-GE3 Datasheet (P10-P12)SIZF916DT-T1-GE3 Datasheet (P13)
ECAD Model:
Más información:
SIZF916DT-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAIR-6x5F-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N, NPN
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
40 A, 60 A
Rds On - Resistencia de la fuente de drenaje:
12.7 mOhms, 6.58 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.1 V
Vgs - Voltaje puerta-fuente:
4.5 V
Qg - Carga de puerta:
14.6 nC, 62 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
26.6 W, 60 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
TAMAÑO
Tipo de transistor:
2 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
53 S, 91 S
Otoño:
10 ns, 20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
45 ns, 60 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns, 45 ns
Tiempo típico de retardo de encendido:
17 ns, 30 ns
Tags
SIZF91, SIZF9, SIZF, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Parte # Mfg. Descripción Valores Precio
SIZF916DT-T1-GE3
DISTI # SIZF916DT-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH DUAL 30V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.6615
  • 3000:$0.6946
SIZF916DT-T1-GE3
DISTI # SIZF916DT-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH DUAL 30V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.7665
  • 500:$0.9709
  • 100:$1.1753
  • 10:$1.5070
  • 1:$1.6900
SIZF916DT-T1-GE3
DISTI # SIZF916DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH DUAL 30V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.7665
  • 500:$0.9709
  • 100:$1.1753
  • 10:$1.5070
  • 1:$1.6900
SIZF916DT-T1-GE3
DISTI # SIZF916DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V/30V 40A/60A 9-Pin PowerPAIR - Tape and Reel (Alt: SIZF916DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.6049
  • 30000:$0.6219
  • 18000:$0.6399
  • 12000:$0.6669
  • 6000:$0.6869
SIZF916DT-T1-GE3
DISTI # 59AC7467		Vishay IntertechnologiesDUAL N-CH 30-V (D-S) MOSFET W/SCHOTT0
  • 10000:$0.6000
  • 6000:$0.6150
  • 4000:$0.6380
  • 2000:$0.7090
  • 1000:$0.7800
  • 1:$0.8130
SIZF916DT-T1-GE3
DISTI # 81AC2801		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR,Transistor Polarity:Dual N Channel + Schottky,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage RoHS Compliant: Yes6050
  • 500:$1.0700
  • 250:$1.2200
  • 100:$1.3700
  • 50:$1.4900
  • 25:$1.6000
  • 10:$1.7200
  • 1:$1.9400
SIZF916DT-T1-GE3
DISTI # 78-SIZF916DT-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F
RoHS: Compliant		6000
  • 1:$1.9200
  • 10:$1.7000
  • 100:$1.3600
  • 500:$1.0600
  • 1000:$0.8510
  • 3000:$0.7740
SIZF916DT-T1-GE3
DISTI # 1783705		Vishay IntertechnologiesDUAL N-CHANNEL 30 V (D-S) MOSFET WITH SC, RL5990
  • 3000:£0.5500
SIZF916DT-T1-GE3
DISTI # 2932986		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
RoHS: Compliant		6050
  • 1000:$1.2400
  • 500:$1.3200
  • 250:$1.5400
  • 100:$1.8800
  • 10:$2.4000
  • 1:$2.9000
SIZF916DT-T1-GE3
DISTI # 2932986		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR6050
  • 500:£0.7460
  • 250:£0.8530
  • 100:£0.9600
  • 25:£1.2200
  • 5:£1.3200
Imagen Parte # Descripción
SIZF916DT-T1-GE3

Mfr.#: SIZF916DT-T1-GE3

OMO.#: OMO-SIZF916DT-T1-GE3

 MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F
SIZF916DT-T1-GE3

Mfr.#: SIZF916DT-T1-GE3

OMO.#: OMO-SIZF916DT-T1-GE3-VISHAY

 MOSFET N-CH DUAL 30V
Disponibilidad
Valores:
Available
En orden:
1989
Ingrese la cantidad:
El precio actual de SIZF916DT-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,92 US$
1,92 US$
10
1,70 US$
17,00 US$
100
1,36 US$
136,00 US$
500
1,06 US$
530,00 US$
1000
0,85 US$
851,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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