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BSM300D12P2E001

BSM300D12P2E001
Mfr. #:
BSM300D12P2E001
Fabricante:
Rohm Semiconductor
Descripción:
Discrete Semiconductor Modules 300A SiC Power Module
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM300D12P2E001 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BSM300D12P2E001 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
Módulos de semiconductores discretos
RoHS:
Y
Producto:
Módulos MOSFET de potencia
Escribe:
MOSFET de potencia SiC
Vgs - Voltaje puerta-fuente:
- 6 V, 22 V
Estilo de montaje:
Montaje con tornillo
Paquete / Caja:
Módulo
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
BSMx
Embalaje:
A granel
Configuración:
Medio puente
Altura:
17 mm
Longitud:
122 mm
Ancho:
62 mm
Marca:
Semiconductor ROHM
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Tiempo de retardo típico:
80 ns
Otoño:
65 ns
Id - Corriente de drenaje continua:
300 A
Pd - Disipación de energía:
1875 W
Tipo de producto:
Módulos de semiconductores discretos
Hora de levantarse:
70 ns
Cantidad de paquete de fábrica:
4
Subcategoría:
Módulos de semiconductores discretos
Tiempo de retardo de apagado típico:
250 ns
Tiempo típico de retardo de encendido:
80 ns
Vds - Voltaje de ruptura de drenaje-fuente:
1200 V
Vgs th - Voltaje umbral puerta-fuente:
1.6 V
Parte # Alias:
BSM300D12P2E001
Tags
BSM300, BSM30, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C ROHM BSM300D12P2E001
***p One Stop Japan
Trans MOSFET N-CH 1.2KV 300A Automotive 11-Pin Tray
***et Europe
Trans MOSFET N-CH 1200V 300A 10-Pin Case E Tray
***ical
Trans MOSFET N-CH SiC 1.2KV 300A 11-Pin Tray
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
***i-Key
MOSFET 2N-CH 1200V 300A
***ronik
SICDMOS 1200V 300A 1.6V Modul
***
300A SIC POWER MODULE
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
BSM300D12P2E001 SiC Power Module
ROHM BSM300D12P2E001 SiC Power Module is a half bridge module consisting of a Silicon Carbide DMOSFET and a Silicon Carbide Schottky Barrier Diode. It's designed for Motor Drives, Inverter/Converters, Photovoltaics, energy harvesting and induction heating equipment. It has low surge, low switching loss and high-speed switching is possible.
Parte # Mfg. Descripción Valores Precio
BSM300D12P2E001
DISTI # BSM300D12P2E001-ND		ROHM SemiconductorMOSFET 2N-CH 1200V 300A
RoHS: Compliant
Min Qty: 1
Container: Tray		6In Stock
  • 1:$663.0800
BSM300D12P2E001
DISTI # BSM300D12P2E001		ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1:€638.5900
BSM300D12P2E001
DISTI # BSM300D12P2E001		ROHM SemiconductorTrans MOSFET N-CH 1200V 300A 10-Pin Case E Tray - Bulk (Alt: BSM300D12P2E001)
RoHS: Compliant
Min Qty: 4
Container: Bulk		Americas - 0
    BSM300D12P2E001
    DISTI # 755-BSM300D12P2E001    		ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant    		46
    • 1:$639.4400
    • 5:$600.9100
    BSM300D12P2E001ROHM Semiconductor 3
    • 4:$885.8400
    • 2:$941.2050
    • 1:$968.8875
    BSM300D12P2E001
    DISTI # BSM300D12P2E001    		ROHM SemiconductorSiC-N-Ch-Half-Bridge+2xSBD 1200V 300A E-
    RoHS: Compliant    		4
    • 1:€895.4000
    • 4:€835.4000
    • 8:€805.4000
    • 12:€777.3800
    BSM300D12P2E001
    DISTI # TMOSP11415    		ROHM SemiconductorSICDMOS 1200V 300A 1.6V Modul
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 4:$767.9200
    BSM300D12P2E001-EDEM3
    DISTI # AS0000000000108    		AgileSwitch 
    RoHS: Compliant    		2 in Stock0 on Order
    • 100:$174.2300
    • 50:$182.9400
    • 10:$191.6500
    • 1:$200.3600
    BSM300D12P2E001ROHM SemiconductorDiscrete Semiconductor Modules 300A SiC Power Module
    RoHS: Compliant    		Americas - 6
      BSM300D12P2E001ROHM SemiconductorRoHS(ship within 1day)4
      • 1:$610.7700
      • 10:$588.8000
      • 50:$571.2300
      • 100:$562.4400
      • 500:$558.0400
      • 1000:$553.6500
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      OMO.#: OMO-CGA2B3X7R1H104K050BE-TDK

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      Disponibilidad
      Valores:
      45
      En orden:
      2028
      Ingrese la cantidad:
      El precio actual de BSM300D12P2E001 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      639,44 US$
      639,44 US$
      5
      600,91 US$
      3 004,55 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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