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IRFSL4227PBF

IRFSL4227PBF
Mfr. #:
IRFSL4227PBF
Fabricante:
Infineon Technologies
Descripción:
Darlington Transistors MOSFET MOSFT 200V 65A 26mOhm 70nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFSL4227PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFSL4227PBF DatasheetIRFSL4227PBF Datasheet (P4-P6)IRFSL4227PBF Datasheet (P7-P9)IRFSL4227PBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
embalaje
Tubo
Unidad de peso
0.084199 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
I2PAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
330 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 40 C
Otoño
31 ns
Hora de levantarse
20 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
62 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Resistencia a la fuente de desagüe de Rds
26 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
21 ns
Tiempo de retardo de encendido típico
33 ns
Qg-Gate-Charge
70 nC
Transconductancia directa-Mín.
49 S
Modo de canal
Mejora
Tags
IRFSL42, IRFSL4, IRFSL, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFSL4227PBF N-channel MOSFET Transistor, 62 A, 200 V, 3-Pin TO-262
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-262 package, TO262-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***nell
MOSFET, N-CH, 200V, 62A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 62A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET Switch in a TO-262 package, TO262-3, RoHS
***Yang
Trans MOSFET N-CH 200V 72A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 200V, 76A, 23.2 MOHM, 100 NC QG, TO-262
*** Services
CoC and 2-years warranty / RFQ for pricing
***ark
HEXFET Power MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:72A; On Resistance, Rds(on):18.6mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:4-TO-262 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
IRFSL4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-262
***ure Electronics
Single N-Channel 150 V 15 mOhm 110 nC HEXFET® Power Mosfet - TO-262
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ark
TUBE / MOSFET, 150V, 83A, 15 mOhm, 71 nC Qg, TO-262
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***nell
MOSFET, N-CH, 150V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
*** Electronics
INFINEON IRFSL38N20DPBF MOSFET Transistor, N Channel, 43 A, 200 V, 0.054 ohm, 10 V, 5 VNew
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 200V, 44A, 54 mOhm, 60 nC Qg, TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):54mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***nell
MOSFET, N, 200V, D2-PAK; Transistor type:MOSFET; Voltage, Vds typ:200V; Current, Id cont:44A; Resistance, Rds on:54ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:D2-PAK (TO-263); Current, Id cont @ 100 degree C:32A; Current, Id cont @ 25 degree C:44A; Current, Idm pulse:180A; Power, Pd:320W; Termination Type:SMD; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds:200V; Voltage, Vds max:200V; Voltage, Vgs th max:5V; Voltage, Vgs th min:3V; Rth:0.47
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N CH, 200V, 24A, TO262; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:200V; On Resistance Rds(on):63.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:TO-262; Power Dissipation Pd:144W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 400 V 0.55 Ohms Surface Mount Power Mosfet - TO-262
***nell
N CHANNEL MOSFET, 400V, 10A, I2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold
***icontronic
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***roFlash
Transistor, mosfet, n-Channel, 100V V(Br)Dss, 56A I(D), to-262Aa Rohs Compliant: Yes
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET, N-CH, 100V, 56A, TO-262AA; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Parte # Mfg. Descripción Valores Precio
IRFSL4227PBF
DISTI # IRFSL4227PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 62A TO-262
RoHS: Compliant
Min Qty: 200
Container: Tube		Limited Supply - Call
    IRFSL4227PBF
    DISTI # 91Y4713    		Infineon Technologies AGMOSFET, N-CH, 200V, 62A, TO-262-3,Transistor Polarity:N Channel,Continuous Drain Current Id:62A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power , RoHS Compliant: Yes365
    • 1:$4.3200
    • 10:$3.6700
    • 25:$3.5100
    • 50:$3.3400
    • 100:$3.1800
    • 250:$3.0200
    • 500:$2.6900
    IRFSL4227PBF
    DISTI # 942-IRFSL4227PBF    		Infineon Technologies AGMOSFET MOSFT 200V 65A 26mOhm 70nC
    RoHS: Compliant    		0
      IRFSL4227PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 150
        IRFSL4227PBF
        DISTI # 2580032        		Infineon Technologies AGMOSFET, N-CH, 200V, 62A, TO-262-3
        RoHS: Compliant        		365
        • 1:£3.6000
        • 10:£2.7400
        • 100:£2.3700
        • 250:£2.2500
        • 500:£2.0100
        IRFSL4227PBF
        DISTI # 2580032        		Infineon Technologies AGMOSFET, N-CH, 200V, 62A, TO-262-3
        RoHS: Compliant        		365
        • 1:$5.0800
        • 10:$4.7500
        • 100:$4.2000
        • 250:$3.9700
        • 500:$3.7700
        • 1000:$3.5800
        • 2500:$3.5200
        • 5000:$3.2600
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        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de IRFSL4227PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        3,90 US$
        3,90 US$
        10
        3,70 US$
        37,05 US$
        100
        3,51 US$
        351,00 US$
        500
        3,32 US$
        1 657,50 US$
        1000
        3,12 US$
        3 120,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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