IPN80R1K2P7ATMA1

Mfr. #:: IPN80R1K2P7ATMA1
Fabricante:: Infineon Technologies
Descripción:: COOLMOS P7 800V SOT-223
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPN80R1K2P7ATMA1 Ficha de datos
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Más información:: IPN80R1K2P7ATMA1 más información

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Tags: IPN80R1, IPN80, IPN8, IPN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPN80R1K2P7ATMA1 Descripción

***et Europe: CoolMOS P7 Power Transistor MOSFET 800V 4.5A 3-Pin PG-SOT223 T/R

***ical: Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) SOT-223 T/R

***ronik: N-CH 800V 4,5A 1000mOhm SOT223

***ure Electronics: 800V, 4.5A, 1.2 Ohms, SOT223

***i-Key: COOLMOS P7 800V SOT-223

***ark: Mosfet, N-Ch, 800V, 4.5A, 6.8W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:6.8W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 800V, 4.5A, 6.8W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:6.8W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

IPN80R1K2P7ATMA1 Más información

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPN80R1K2P7ATMA1 DISTI # V72:2272_19084644	Infineon Technologies AG	IPN80R1K2P7	3000	3000:$0.3913 1000:$0.4412 500:$0.5084 250:$0.5869 100:$0.6111 25:$0.6525 10:$0.7975 1:$0.9603
IPN80R1K2P7ATMA1 DISTI # IPN80R1K2P7ATMA1TR-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.3954 6000:$0.4108 3000:$0.4325
IPN80R1K2P7ATMA1 DISTI # IPN80R1K2P7ATMA1CT-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4773 500:$0.6045 100:$0.7318 10:$0.9390 1:$1.0500
IPN80R1K2P7ATMA1 DISTI # IPN80R1K2P7ATMA1DKR-ND	Infineon Technologies AG	COOLMOS P7 800V SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4773 500:$0.6045 100:$0.7318 10:$0.9390 1:$1.0500
IPN80R1K2P7ATMA1 DISTI # 33620974	Infineon Technologies AG	IPN80R1K2P7	3000	17:$0.9603
IPN80R1K2P7ATMA1 DISTI # 33356367	Infineon Technologies AG	IPN80R1K2P7	3000	3000:$0.3686
IPN80R1K2P7ATMA1 DISTI # IPN80R1K2P7ATMA1	Infineon Technologies AG	CoolMOS P7 Power Transistor MOSFET 800V 4.5A 3-Pin PG-SOT223 T/R - Tape and Reel (Alt: IPN80R1K2P7ATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3729 18000:$0.3799 12000:$0.3929 6000:$0.4079 3000:$0.4229
IPN80R1K2P7ATMA1 DISTI # SP001664998	Infineon Technologies AG	CoolMOS P7 Power Transistor MOSFET 800V 4.5A 3-Pin PG-SOT223 T/R (Alt: SP001664998) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.3869 18000:€0.4079 12000:€0.4749 6000:€0.5579 3000:€0.6489
IPN80R1K2P7ATMA1 DISTI # 93AC7124	Infineon Technologies AG	MOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2970	1000:$0.4460 500:$0.5650 250:$0.6020 100:$0.6390 50:$0.7040 25:$0.7680 10:$0.8320 1:$0.9700
IPN80R1K2P7ATMA1 DISTI # 726-IPN80R1K2P7ATMA1	Infineon Technologies AG	MOSFET LOW POWER_NEW RoHS: Compliant	5384	1:$0.9600 10:$0.8240 100:$0.6330 500:$0.5590 1000:$0.4420 3000:$0.3920 9000:$0.3770
IPN80R1K2P7ATMA1 DISTI # IPN80R1K2P7	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,800V,3.1A,6.8W,PG-SOT223	2604	500:$0.4700 100:$0.5100 20:$0.5600 5:$0.6400 1:$0.7100
IPN80R1K2P7ATMA1 DISTI # 2986362	Infineon Technologies AG	MOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223 RoHS: Compliant	2970	1000:$0.5890 500:$0.6920 250:$0.7520 100:$0.8130 25:$1.1700 5:$1.2800
IPN80R1K2P7ATMA1 DISTI # 2986362	Infineon Technologies AG	MOSFET, N-CH, 800V, 4.5A, 6.8W, SOT-223	2970	100:£0.5740 10:£0.8120 1:£0.9940

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Imagen	Parte #	Descripción
	Mfr.#: IPN80R1K2P7ATMA1 OMO.#: OMO-IPN80R1K2P7ATMA1	MOSFET LOW POWER_NEW
	Mfr.#: IPN80R1K4P7ATMA1 OMO.#: OMO-IPN80R1K4P7ATMA1	MOSFET LOW POWER_NEW
	Mfr.#: IPN80R1K2P7ATMA1-CUT TAPE OMO.#: OMO-IPN80R1K2P7ATMA1-CUT-TAPE-1190	Nuevo y original
	Mfr.#: IPN80R1K4P7ATMA1-CUT TAPE OMO.#: OMO-IPN80R1K4P7ATMA1-CUT-TAPE-1190	Nuevo y original
	Mfr.#: IPN80R1K2P7ATMA1 OMO.#: OMO-IPN80R1K2P7ATMA1-INFINEON-TECHNOLOGIES	COOLMOS P7 800V SOT-223
	Mfr.#: IPN80R1K4P7 OMO.#: OMO-IPN80R1K4P7-1190	Nuevo y original
	Mfr.#: IPN80R1K4P7ATMA1 OMO.#: OMO-IPN80R1K4P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL 800V 4A SOT223

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El precio actual de IPN80R1K2P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,55 US$~~; ~~0,55 US$~~

10: ~~0,53 US$~~; ~~5,26 US$~~

100: ~~0,50 US$~~; ~~49,84 US$~~

500: ~~0,47 US$~~; ~~235,35 US$~~

1000: ~~0,44 US$~~; ~~443,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPN80R1K2P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes