OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IXFN80N50Q3

IXFN80N50Q3
Mfr. #:
IXFN80N50Q3
Fabricante:
Littelfuse
Descripción:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN80N50Q3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN80N50Q3 DatasheetIXFN80N50Q3 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFN80N50Q3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
63 A
Rds On - Resistencia de la fuente de drenaje:
65 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
200 nC
Pd - Disipación de energía:
780 W
Configuración:
Único
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFN80N50
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Tipo de producto:
MOSFET
Hora de levantarse:
250 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Unidad de peso:
1.058219 oz
Tags
IXFN80N5, IXFN80, IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***trelec
MOSFET Module, Single - N-Channel, 500V, 63A, 780W, SOT-227B
***nell
MOSFET MODULE, N-CH, 500V, 63A, SOT-227
***ource
HiperFET Power MOSFET Q3-Class
*** Services
CoC and 2-years warranty / RFQ for pricing
***ark
Mosfet Module, N-Ch, 500V, 63A, Sot-227; Transistor Polarity:n Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.065Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:6.5V; Power Rohs Compliant: Yes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFN80N50Q3
DISTI # V36:1790_15877457		IXYS CorporationTrans MOSFET N-CH 500V 63A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN80N50Q3
    DISTI # IXFN80N50Q3-ND    		IXYS CorporationMOSFET N-CH 500V 63A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		14In Stock
    • 100:$30.7626
    • 30:$33.0990
    • 10:$36.0200
    • 1:$38.9400
    IXFN80N50Q3
    DISTI # 747-IXFN80N50Q3    		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
    RoHS: Compliant    		11
    • 1:$38.9300
    • 5:$36.9900
    • 10:$36.0200
    • 25:$33.1000
    • 50:$31.6900
    • 100:$30.7600
    • 200:$28.2300
    IXFN80N50Q3
    DISTI # 8047583    		IXYS CorporationMOSFET N-CH 500V 63A Q3 HIPERFET SOT227B, EA15
    • 10:£20.0400
    • 1:£20.5400
    IXFN80N50Q3
    DISTI # 2674762    		IXYS CorporationMOSFET MODULE, N-CH, 500V, 63A, SOT-227
    RoHS: Compliant    		0
    • 100:£21.9700
    • 50:£24.6600
    • 10:£25.7700
    • 5:£28.7800
    • 1:£29.7400
    IXFN80N50Q3
    DISTI # 2674762    		IXYS CorporationMOSFET MODULE, N-CH, 500V, 63A, SOT-227
    RoHS: Compliant    		0
    • 100:$46.9600
    • 10:$54.9700
    • 1:$59.4200
    Imagen Parte # Descripción
    OP249GPZ

    Mfr.#: OP249GPZ

    OMO.#: OMO-OP249GPZ

    		 High Speed Operational Amplifiers DUAL PREC JFET IC High Speed
    NC7WZ17P6X

    Mfr.#: NC7WZ17P6X

    OMO.#: OMO-NC7WZ17P6X

    		 Buffers & Line Drivers UHS 2 BUFFER SCHMITT
    IPBT-104-H1-T-S-RA-K

    Mfr.#: IPBT-104-H1-T-S-RA-K

    OMO.#: OMO-IPBT-104-H1-T-S-RA-K

    		 Power to the Board .165" Power Mate Isolated Power Terminal Strip
    MAX08NG

    Mfr.#: MAX08NG

    OMO.#: OMO-MAX08NG

    		 Heat Sinks Max Clip System for TO-218, TO-247, MAX-247, TO-247J, with Screws, 18mm Width, 0.6mm Thickness, 75N Force
    MAX08NG

    Mfr.#: MAX08NG

    OMO.#: OMO-MAX08NG-AAVID-THERMALLOY

    		 MAX CLIP TO-218/TO-247 SCREW-MNT
    OP249GPZ

    Mfr.#: OP249GPZ

    OMO.#: OMO-OP249GPZ-ANALOG-DEVICES

    		 High Speed Operational Amplifiers DUAL PREC JFET IC High Speed
    08051C501KAT2A

    Mfr.#: 08051C501KAT2A

    OMO.#: OMO-08051C501KAT2A-AVX

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 500pF 10%
    PQD6-Q24-S12-D

    Mfr.#: PQD6-Q24-S12-D

    OMO.#: OMO-PQD6-Q24-S12-D-CUI

    		 Isolated DC/DC Converters dc-dc isolated, 6 W, 9 36 Vdc input, 12 Vdc, 0.5 A, single regulated output, DIP
    IPBT-104-H1-T-S-RA-K

    Mfr.#: IPBT-104-H1-T-S-RA-K

    OMO.#: OMO-IPBT-104-H1-T-S-RA-K-SAMTEC

    		 .165" Power Mate Isolated Power Terminal Strip
    NC7WZ17P6X

    Mfr.#: NC7WZ17P6X

    OMO.#: OMO-NC7WZ17P6X-ON-SEMICONDUCTOR

    		 IC BUF NON-INVERT 5.5V SC70-6
    Disponibilidad
    Valores:
    11
    En orden:
    1994
    Ingrese la cantidad:
    El precio actual de IXFN80N50Q3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    38,93 US$
    38,93 US$
    5
    36,99 US$
    184,95 US$
    10
    36,02 US$
    360,20 US$
    25
    33,10 US$
    827,50 US$
    50
    31,69 US$
    1 584,50 US$
    100
    30,76 US$
    3 076,00 US$
    200
    28,23 US$
    5 646,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    More Newest Products
    Top