IPW60R160P6FKSA1

IPW60R160P6FKSA1
Mfr. #:
IPW60R160P6FKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_LEGACY
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPW60R160P6FKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPW60R160P6FKSA1 DatasheetIPW60R160P6FKSA1 Datasheet (P4-P5)
ECAD Model:
Más información:
IPW60R160P6FKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
23.8 A
Rds On - Resistencia de la fuente de drenaje:
144 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
44 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
176 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
21.1 mm
Longitud:
16.13 mm
Serie:
CoolMOS P6
Tipo de transistor:
1 N-Channel
Ancho:
5.21 mm
Marca:
Infineon Technologies
Otoño:
5.8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7.6 ns
Cantidad de paquete de fábrica:
240
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
12.5 ns
Parte # Alias:
IPW60R160P6 SP001017092
Unidad de peso:
1.340411 oz
Tags
IPW60R160, IPW60R16, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 160 mOhm 44 nC CoolMOS™ Power Mosfet - TO-247-3
***ical
Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube
***i-Key
MOSFET N-CH 600V TO247-3
***ark
Mosfet, N-Ch, 600V, 23.8A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 23.8A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:176W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P6 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 600V, 23,8A, TO-247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23.8A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.144ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:176W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P6 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPW60R160P6FKSA1
DISTI # V99:2348_06378559
Infineon Technologies AGTrans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-247 Tube236
  • 500:$2.2450
  • 250:$2.4280
  • 100:$2.6300
  • 10:$3.0350
  • 1:$3.9226
IPW60R160P6FKSA1
DISTI # V36:1790_06378559
Infineon Technologies AGTrans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$1.5800
  • 120000:$1.5830
  • 24000:$1.8830
  • 2400:$2.4280
  • 240:$2.5200
IPW60R160P6FKSA1
DISTI # IPW60R160P6FKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
128In Stock
  • 5040:$1.8231
  • 2640:$1.8943
  • 720:$2.3644
  • 240:$2.7774
  • 25:$3.2048
  • 10:$3.3900
  • 1:$3.7700
IPW60R160P6FKSA1
DISTI # 26566807
Infineon Technologies AGTrans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-247 Tube236
  • 4:$3.9226
IPW60R160P6FKSA1
DISTI # SP001017092
Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube (Alt: SP001017092)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 1980
  • 1000:€1.4900
  • 100:€1.5900
  • 500:€1.5900
  • 50:€1.6900
  • 10:€1.7900
  • 25:€1.7900
  • 1:€1.9900
IPW60R160P6FKSA1
DISTI # IPW60R160P6FKSA1
Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube - Bulk (Alt: IPW60R160P6FKSA1)
RoHS: Compliant
Min Qty: 202
Container: Bulk
Americas - 0
    IPW60R160P6FKSA1
    DISTI # IPW60R160P6FKSA1
    Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R160P6FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
    • 1440:$1.6900
    • 2400:$1.6900
    • 480:$1.7900
    • 960:$1.7900
    • 240:$1.8900
    IPW60R160P6FKSA1
    DISTI # IPW60R160P6
    Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 23.8A 3-Pin TO-247 Tube (Alt: IPW60R160P6)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Asia - 0
    • 12000:$1.7171
    • 6000:$1.7391
    • 2400:$1.7617
    • 1200:$1.7849
    • 720:$1.8331
    • 480:$1.8840
    • 240:$1.9379
    IPW60R160P6FKSA1
    DISTI # 12AC9737
    Infineon Technologies AGMOSFET, N-CH, 600V, 23.8A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:23.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes11
    • 500:$2.2700
    • 250:$2.5400
    • 100:$2.6700
    • 50:$2.8000
    • 25:$2.9400
    • 10:$3.0800
    • 1:$3.6300
    IPW60R160P6
    DISTI # 726-IPW60R160P6
    Infineon Technologies AGMOSFET HIGH POWER_LEGACY
    RoHS: Compliant
    218
    • 1:$3.5900
    • 10:$3.0500
    • 100:$2.6400
    • 250:$2.5100
    • 500:$2.2500
    IPW60R160P6FKSA1
    DISTI # 726-IPW60R160P6FKSA1
    Infineon Technologies AGMOSFET HIGH POWER_LEGACY
    RoHS: Compliant
    240
    • 1:$3.5900
    • 10:$3.0500
    • 100:$2.6400
    • 250:$2.5100
    • 500:$2.2500
    IPW60R160P6FKSA1
    DISTI # 2709935
    Infineon Technologies AGMOSFET, N-CH, 600V, 23.8A, TO-247
    RoHS: Compliant
    11
    • 2640:$2.8700
    • 720:$3.5700
    • 240:$4.1900
    • 25:$4.8300
    • 10:$5.1100
    • 1:$5.6800
    IPW60R160P6FKSA1
    DISTI # 2709935
    Infineon Technologies AGMOSFET, N-CH, 600V, 23.8A, TO-24764
    • 500:£1.5700
    • 250:£1.7500
    • 100:£1.9400
    • 10:£2.3500
    • 1:£2.9500
    Imagen Parte # Descripción
    IPW60R160P6FKSA1

    Mfr.#: IPW60R160P6FKSA1

    OMO.#: OMO-IPW60R160P6FKSA1

    MOSFET HIGH POWER_LEGACY
    IPW60R160P6

    Mfr.#: IPW60R160P6

    OMO.#: OMO-IPW60R160P6

    MOSFET HIGH POWER_LEGACY
    IPW60R160C6FKSA1

    Mfr.#: IPW60R160C6FKSA1

    OMO.#: OMO-IPW60R160C6FKSA1

    MOSFET N-Ch 600V 23.8A TO247-3 CoolMOS C6
    IPW60R160C6

    Mfr.#: IPW60R160C6

    OMO.#: OMO-IPW60R160C6-1190

    Trans MOSFET N-CH 600V 23.8A 3-Pin TO-247 Tube (Alt: IPW60R160C6)
    IPW60R160P6

    Mfr.#: IPW60R160P6

    OMO.#: OMO-IPW60R160P6-1190

    MOSFET HIGH POWER_LEGACY
    IPW60R160P6FKSA1

    Mfr.#: IPW60R160P6FKSA1

    OMO.#: OMO-IPW60R160P6FKSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V TO247-3
    IPW60R165CP(6R165P)

    Mfr.#: IPW60R165CP(6R165P)

    OMO.#: OMO-IPW60R165CP-6R165P--1190

    Nuevo y original
    IPW60R165CP,6R165P

    Mfr.#: IPW60R165CP,6R165P

    OMO.#: OMO-IPW60R165CP-6R165P-1190

    Nuevo y original
    IPW60R165CPFKSA1

    Mfr.#: IPW60R165CPFKSA1

    OMO.#: OMO-IPW60R165CPFKSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 21A TO-247
    IPW60R165CP

    Mfr.#: IPW60R165CP

    OMO.#: OMO-IPW60R165CP-124

    Darlington Transistors MOSFET N-Ch 650V 21A TO247-3 CoolMOS CP
    Disponibilidad
    Valores:
    240
    En orden:
    2223
    Ingrese la cantidad:
    El precio actual de IPW60R160P6FKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,59 US$
    3,59 US$
    10
    3,05 US$
    30,50 US$
    100
    2,64 US$
    264,00 US$
    250
    2,51 US$
    627,50 US$
    500
    2,25 US$
    1 125,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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