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FDMC7570S

FDMC7570S
Mfr. #:
FDMC7570S
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMC7570S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDMC7570S más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
Power-33-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
40 A
Rds On - Resistencia de la fuente de drenaje:
2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.7 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
59 W
Configuración:
Único
Nombre comercial:
SyncFET
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
3.3 mm
Serie:
FDMC7570S
Tipo de transistor:
1 N-Channel
Ancho:
3.3 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
154 S
Otoño:
4.5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
6.8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
34 ns
Tiempo típico de retardo de encendido:
14 ns
Unidad de peso:
0.001133 oz
Tags
FDMC75, FDMC7, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Sense
MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
***r Electronics
Power Field-Effect Transistor, 27A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMC7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ical
Trans MOSFET N-CH 25V 34A 8-Pin PQFN T/R
***ment14 APAC
N CH MOSFET, 25V, 34A, 8-PWR56; Transist; N CH MOSFET, 25V, 34A, 8-PWR56; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; No. of Pins:8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
N-Channel 25 V 30 A 0.00145 ohm SMT PowerTrench SyncFET Mosfet Power 56
***r Electronics
Power Field-Effect Transistor, 30A I(D), 25V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7560S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 44A 8PQFN
***ineon
Benefits: Low RDS(ON) (less than 1.10 mOhms); Schottky Intrinsic Diode with Low Forward Voltage; Low Thermal Resistance to PCB (less than 1.0C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET | Target Applications: MultiPhase SyncFET; Point of Load SyncFET
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®
***ineon SCT
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance., DIRECTFET, RoHS
***nell
MOSFET, N-CH, 30V, 192A, DIRECTFET MT-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 192A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available
***ineon
Benefits: Ultra-low RDS(on); Low Profile (less than 0.7 mm); Dual Sided Cooling Compatible; Ultra-low Package Inductance; Optimized for high speed switching or high current switch (Power Tool); Low Conduction and Switching Losses; Compatible with existing Surface Mount Techniques; StrongIRFET | Target Applications: Battery Operated Drive; Battery Protection; eFuse; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; ORing; Point of Load SyncFET; Push-Pull
FDMx75x PowerTrench® MOSFETs & SyncFETs™
ON Semiconductor FDMx757x PowerTrench® MOSFETs and SyncFETs™ combine exceptional performance and high efficiency. The FDMC7570S and FDMC7572S PowerTrench SyncFETs are designed to minimize switching losses in power conversion applications. These SyncFETs offer low ON-resistance, maintain excellent switching performance, and add the benefit of an efficient monolithic Schottky body diode. The FDMS7578 and FDMS75780 MOSFETs improve the overall efficiency and minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs are optimized for low gate charge, low on-resistance, fast switching speed, and body diode reverse recovery performance.
Parte # Mfg. Descripción Valores Precio
FDMC7570S
DISTI # V72:2272_06337875		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R2784
  • 1000:$1.5680
  • 500:$1.7650
  • 250:$1.9130
  • 100:$2.0120
  • 25:$2.0860
  • 10:$2.3180
  • 1:$2.9931
FDMC7570S
DISTI # V36:1790_06337875		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R0
  • 3000000:$1.2090
  • 1500000:$1.2100
  • 300000:$1.2420
  • 30000:$1.2840
  • 3000:$1.2900
FDMC7570S
DISTI # FDMC7570SCT-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3251In Stock
  • 1000:$1.5710
  • 500:$1.8628
  • 100:$2.1882
  • 10:$2.6710
  • 1:$2.9700
FDMC7570S
DISTI # FDMC7570SDKR-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3251In Stock
  • 1000:$1.5710
  • 500:$1.8628
  • 100:$2.1882
  • 10:$2.6710
  • 1:$2.9700
FDMC7570S
DISTI # FDMC7570STR-ND		ON SemiconductorMOSFET N-CH 25V 40A POWER33
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$1.3945
  • 3000:$1.4490
FDMC7570S
DISTI # 33954806		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R300000
  • 3000:$0.3375
FDMC7570S
DISTI # 32336673		ON SemiconductorTrans MOSFET N-CH Si 25V 27A 8-Pin Power 33 T/R2784
  • 5:$2.9931
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€1.2900
  • 18000:€1.3900
  • 12000:€1.4900
  • 6000:€1.7900
  • 3000:€2.1900
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R - Bulk (Alt: FDMC7570S)
Min Qty: 218
Container: Bulk		Americas - 0
  • 436:$1.3900
  • 654:$1.3900
  • 1090:$1.3900
  • 2180:$1.3900
  • 218:$1.4900
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 150000:$1.7010
  • 75000:$1.7293
  • 30000:$1.7890
  • 15000:$1.8529
  • 9000:$1.9215
  • 6000:$1.9954
  • 3000:$2.0752
FDMC7570S
DISTI # FDMC7570S		ON SemiconductorTrans MOSFET N-CH 25V 27A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC7570S)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$1.1900
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
FDMC7570S
DISTI # 92R5533		ON SemiconductorMOSFET Transistor, N Channel, 40 A, 25 V, 0.0016 ohm, 10 V, 1.7 V0
  • 1:$1.3300
FDMC7570S
DISTI # 512-FDMC7570S		ON SemiconductorMOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET
RoHS: Compliant		4253
  • 1:$2.7400
  • 10:$2.3300
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
  • 1000:$1.4500
  • 3000:$1.3800
  • 6000:$1.3200
FDMC7570SFairchild Semiconductor CorporationPower Field-Effect Transistor, 27A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
RoHS: Compliant		22336
  • 1000:$1.5100
  • 500:$1.5900
  • 100:$1.6600
  • 25:$1.7300
  • 1:$1.8600
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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de FDMC7570S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,74 US$
2,74 US$
10
2,33 US$
23,30 US$
100
2,02 US$
202,00 US$
250
1,92 US$
480,00 US$
500
1,72 US$
860,00 US$
1000
1,45 US$
1 450,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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