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SI4890BDY-T1-GE3

SI4890BDY-T1-GE3
Mfr. #:
SI4890BDY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4890BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4890BDY-T1-GE3 DatasheetSI4890BDY-T1-GE3 Datasheet (P4-P6)SI4890BDY-T1-GE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4890BDY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4890, SI489, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si4890BDY Series N-Channel 30 V 12 mOhms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:10.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 16A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.5852
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4890BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5529
  • 5000:$0.5359
  • 10000:$0.5139
  • 15000:$0.4999
  • 25000:$0.4869
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R (Alt: SI4890BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.7209
  • 5000:€0.4919
  • 10000:€0.4229
  • 15000:€0.3909
  • 25000:€0.3639
SI4890BDY-T1-GE3
DISTI # 781-SI4890BDY-T1-GE3		Vishay IntertechnologiesMOSFET 30V 16A 5.7W 12mohm @ 10V
RoHS: Compliant		0
    Imagen Parte # Descripción
    SI4890BDY-T1-GE3

    Mfr.#: SI4890BDY-T1-GE3

    OMO.#: OMO-SI4890BDY-T1-GE3

    		 MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
    SI4890BDY-T1-GE3

    Mfr.#: SI4890BDY-T1-GE3

    OMO.#: OMO-SI4890BDY-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 30V 16A 5.7W 12mohm @ 10V
    SI4890BDY-T1-E3

    Mfr.#: SI4890BDY-T1-E3

    OMO.#: OMO-SI4890BDY-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 30V 16A 5.7W 12mohm @ 10V
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de SI4890BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,32 US$
    1,32 US$
    10
    1,09 US$
    10,90 US$
    100
    0,84 US$
    84,00 US$
    500
    0,72 US$
    361,50 US$
    1000
    0,57 US$
    570,00 US$
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