SI4386DY-T1-E3

Mfr. #:: SI4386DY-T1-E3
Fabricante:: Vishay
Descripción:: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI4386DY-T1-E3 Ficha de datos
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Más información:: SI4386DY-T1-E3 más información

Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI4386DY-E3

Unidad de peso: 0.006596 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: 8-SOIC (0.154", 3.90mm Width)

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: 8-SO

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 1.47W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 30V

Entrada-Capacitancia-Ciss-Vds: -

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 11A (Ta)

Rds-On-Max-Id-Vgs: 7 mOhm @ 16A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Puerta-Carga-Qg-Vgs: 18nC @ 4.5V

Disipación de potencia Pd: 1.47 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 9 ns

Hora de levantarse: 9 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 11 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Resistencia a la fuente de desagüe de Rds: 7 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 35 ns

Tiempo de retardo de encendido típico: 12 ns

Modo de canal: Mejora

Tags: SI4386DY-T, SI4386D, SI4386, SI438, SI43, SI4

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4386DY-T1-E3 Descripción

***ure Electronics: Single N-Channel 30 V 7 mOhms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: N-Channel MOSFETs N-CH REDUCED QG FAST SWITCHING

SI4386DY-T1-E3 Más información

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI4386DY-T1-E3 DISTI # V72:2272_09215556	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R RoHS: Compliant	1865	1000:$0.6183 500:$0.6828 250:$0.8676 100:$0.8807 25:$1.0632 10:$1.0670 1:$1.1776
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6768In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6768In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 11A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	2500:$0.5116
SI4386DY-T1-E3 DISTI # 25789845	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R RoHS: Compliant	1865	1000:$0.6183 500:$0.6828 250:$0.8676 100:$0.8807 25:$1.0632 10:$1.0670
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4386DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5009 5000:$0.4989 10000:$0.4979 15000:$0.4969 25000:$0.4959
SI4386DY-T1-E3 DISTI # SI4386DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R (Alt: SI4386DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4386DY-T1-E3 DISTI # 75M5463	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 16A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):7mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	0	1:$0.8650 2500:$0.8650
SI4386DY-T1-E3 DISTI # 85W2146	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$1.6200 10:$1.3400 25:$1.2400 50:$1.1400 100:$1.0400 500:$0.9090 1000:$0.8660
SI4386DY-T1-E3. DISTI # 30AC0155	Vishay Intertechnologies	N-CH REDUCED QG, FAST SWITCHING MOSFET , ROHS COMPLIANT: YES	0	1:$0.8650 2500:$0.8650
SI4386DY-T1-E3 DISTI # 781-SI4386DY-T1-E3	Vishay Intertechnologies	MOSFET 30V 16A 3.1W 7.0mohm @ 10V RoHS: Compliant	2817	1:$1.6200 10:$1.3400 100:$1.0400 500:$0.9090 1000:$0.8660 2500:$0.8650
SI4386DYT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2500
SI4386DY-T1-E3	Vishay Intertechnologies	MOSFET 30V 16A 3.1W 7.0mohm @ 10V	Americas -
SI4386DY-T1-E3 DISTI # C1S803601003607	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1865	250:$0.8689 100:$0.8807 25:$1.0632 10:$1.0670

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	Mfr.#: SI4386DY-T1-GE3 OMO.#: OMO-SI4386DY-T1-GE3	MOSFET 30V 16A 3.1W 7.0mohm @ 10V
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	Mfr.#: SI4386DY OMO.#: OMO-SI4386DY-1190	Nuevo y original
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	Mfr.#: SI4386DYT1E3 OMO.#: OMO-SI4386DYT1E3-1190	Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: SI4386DY-T1-E3 OMO.#: OMO-SI4386DY-T1-E3-VISHAY	Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

Disponibilidad

Valores:: Available
En orden:: 3000
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El precio actual de SI4386DY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,67 US$~~; ~~0,67 US$~~

10: ~~0,64 US$~~; ~~6,36 US$~~

100: ~~0,60 US$~~; ~~60,27 US$~~

500: ~~0,57 US$~~; ~~284,65 US$~~

1000: ~~0,54 US$~~; ~~535,80 US$~~

Empezar con

SI4386DY-T 3
SI4386D 5
SI4386 6
SI438 15
SI43 161
SI4 2994

SI4386DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes