FDU6696

FDU6696
Mfr. #:
FDU6696
Fabricante:
Rochester Electronics, LLC
Descripción:
Power Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDU6696 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FDU669, FDU66, FDU6, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***or
N-CHANNEL POWER MOSFET
***ser
MOSFETs 30V N-Ch PowerTrench
***el Nordic
Contact for details
***Yang
MOSFET 30V N-Ch PowerTrench - Bulk
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***et
30V N-Channel PowerTrench MOSFET
***el Electronic
Power Field-Effect Transistor, 54A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
***ser
MOSFETs 30V N-Ch PowerTrench
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ark
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
***et
Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251
***ronik
N-CH 30V 35A 11mOhm TO251-3 RoHSconf
***nell
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0088ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***et
MOSFET N-Ch LL UltraFET PWM Optimized
***el Electronic
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***et
MOSFET N-Ch LL UltraFET PWM Optimized
***i-Key
N-CHANNEL POWER MOSFET
***et
MOSFET N-Ch UltraFET Trench Logic Level
***el Electronic
Power Field-Effect Transistor, 50A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
Parte # Mfg. Descripción Valores Precio
FDU6696_Q
DISTI # 512-FDU6696_Q
ON SemiconductorMOSFET 30V N-Ch PowerTrench
RoHS: Not compliant
0
    FDU6696Fairchild Semiconductor CorporationPower Field-Effect Transistor, 13A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant
    3600
    • 1000:$0.8300
    • 500:$0.8700
    • 100:$0.9100
    • 25:$0.9500
    • 1:$1.0200
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    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de FDU6696 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,24 US$
    1,24 US$
    10
    1,18 US$
    11,83 US$
    100
    1,12 US$
    112,05 US$
    500
    1,06 US$
    529,15 US$
    1000
    1,00 US$
    996,00 US$
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