IXA45IF1200HB

IXA45IF1200HB
Mfr. #:
IXA45IF1200HB
Fabricante:
Littelfuse
Descripción:
IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXA45IF1200HB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXA45IF1200HB más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
IGBTs - Single
Serie
IXA45IF1200HB
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Nombre comercial
XPT
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247AD (HB)
Configuración
Único
Potencia máxima
325W
Tiempo de recuperación inverso trr
350ns
Colector-corriente-Ic-Max
78A
Voltaje-Colector-Emisor-Ruptura-Máx.
1200V
Tipo IGBT
PT
Colector de corriente pulsado Icm
-
Vce-en-Max-Vge-Ic
2.1V @ 15V, 35A
Energía de conmutación
3.8mJ (on), 4.1mJ (off)
Gate-Charge
106nC
Td-encendido-apagado-25 ° C
-
Condición de prueba
600V, 35A, 27 Ohm, 15V
Disipación de potencia Pd
325 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
1200 V
Colector-Emisor-Saturación-Voltaje
1.8 V
Corriente-de-colector-continuo-a-25-C
78 A
Puerta-Emisor-Fuga-Corriente
500 nA
Voltaje máximo del emisor de puerta
20 V
Colector-continuo-Corriente-Ic-Max
45 A
Tags
IXA45, IXA4, IXA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, IXYS IXA45IF1200HB IGBT
***i-Key
IGBT 1200V 78A 325W TO247
***ukat
1200V 78A 325W TO247AD
***nell
IGBT,1200V,74A,TO-247; DC Collector Current:78A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Max:325W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
***ark
XPT IGBT COPACK, 1200V, 78A, TO-247; DC Collector Current:78A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:325W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150�CRoHS Compliant: Yes
***ment14 APAC
IGBT,1200V,74A,TO-247; Transistor Type:IGBT; DC Collector Current:78A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:325W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:-; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:325W
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXA45IF1200HB
DISTI # IXA45IF1200HB-ND
IXYS CorporationIGBT 1200V 78A 325W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$9.4493
IXA45IF1200HB
DISTI # 83R9963
IXYS CorporationXPT IGBT COPACK, 1200V, 78A, TO-247,DC Collector Current:78A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:325W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°CRoHS Compliant: Yes0
    IXA45IF1200HB
    DISTI # 747-IXA45IF1200HB
    IXYS CorporationIGBT Transistors N-Channel: Power MOSFET w/Fast Diode
    RoHS: Compliant
    88
    • 1:$11.5200
    • 10:$10.3700
    • 25:$9.4500
    • 50:$8.6300
    • 100:$8.5300
    • 250:$7.7700
    • 500:$7.1500
    • 1000:$6.2200
    IXA45IF1200HB
    DISTI # 8080262P
    IXYS CorporationIGBT N-CH 1200V 78A 1.8V XPT TO247AD, TU60
    • 250:£5.6100
    • 50:£6.7500
    • 20:£6.9200
    • 10:£7.0900
    IXA45IF1200HB
    DISTI # IXA45IF1200HB
    IXYS Corporation1200V 78A 325W TO247AD
    RoHS: Compliant
    36
    • 1:€9.1000
    • 5:€6.1000
    • 30:€5.1000
    • 60:€4.9000
    IXA45IF1200HB  3
      IXA45IF1200HB
      DISTI # 1829724
      IXYS CorporationIGBT,1200V,74A,TO-247
      RoHS: Compliant
      0
      • 1000:$9.3700
      • 500:$10.7800
      • 250:$11.7100
      • 100:$12.8500
      • 50:$13.0100
      • 25:$14.2400
      • 10:$15.6300
      • 1:$17.3600
      IXA45IF1200HB
      DISTI # 1829724
      IXYS CorporationIGBT,1200V,74A,TO-247
      RoHS: Compliant
      0
      • 100:£6.6400
      • 50:£6.7200
      • 10:£7.2200
      • 5:£8.9700
      • 1:£9.5200
      Imagen Parte # Descripción
      IXA45IF1200HB

      Mfr.#: IXA45IF1200HB

      OMO.#: OMO-IXA45IF1200HB

      IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
      IXA45IF1200HB

      Mfr.#: IXA45IF1200HB

      OMO.#: OMO-IXA45IF1200HB-IXYS-CORPORATION

      IGBT Transistors N-Channel: Power MOSFET w/Fast Diode
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de IXA45IF1200HB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      8,35 US$
      8,35 US$
      10
      7,93 US$
      79,35 US$
      100
      7,52 US$
      751,70 US$
      500
      7,10 US$
      3 549,70 US$
      1000
      6,68 US$
      6 681,80 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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