S25FL512SDSMFBG11

S25FL512SDSMFBG11
Mfr. #:
S25FL512SDSMFBG11
Fabricante:
Cypress Semiconductor
Descripción:
Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
S25FL512SDSMFBG11 Ficha de datos
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Más información:
S25FL512SDSMFBG11 más información S25FL512SDSMFBG11 Product Details
Atributo del producto
Valor de atributo
Fabricante
Cypress Semiconductor Corp
categoria de producto
Memoria
Serie
FL-S
embalaje
* Empaque alternativo
Estilo de montaje
SMD / SMT
Paquete-Estuche
SO-16
Temperatura de funcionamiento
-40°C ~ 105°C (TA)
Interfaz
Serie SPI
Suministro de voltaje
2.7 V ~ 3.6 V
Paquete de dispositivo de proveedor
16-SO
Tamaño de la memoria
512M (64M x 8)
Tipo de memoria
FLASH - NOR
Velocidad
80MHz
Arquitectura
MirrorBit Eclipse
Formato de memoria
DESTELLO
Estándar
Common Flash Interface (CFI)
Tipo de interfaz
SPI
Organización
64 M x 8
Suministro-Corriente-Máx.
100 mA
Ancho de bus de datos
8 bit
Suministro-Voltaje-Máx.
3.6 V
Suministro-Voltaje-Mín.
2.7 V
Frecuencia de reloj máxima
80 MHz
Tipo de tiempo
Asincrónico
Tags
S25FL512SDSMFBG, S25FL512SDSMFB, S25FL512SDSM, S25FL512SDS, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERI
***i-Key
IC FLASH 512M SPI 80MHZ 16SOIC
***ark
TUBE PKGED / 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 80MHZ DDR SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS, EHPLC, SO FOOTPRINT WITH RESET#, UNIFORM 256-KB SECTORS
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Parte # Mfg. Descripción Valores Precio
S25FL512SDSMFBG11
DISTI # S25FL512SDSMFBG11-ND
Cypress SemiconductorIC FLASH 512M SPI 80MHZ 16SOIC
RoHS: Compliant
Min Qty: 94
Container: Tube
Temporarily Out of Stock
  • 94:$8.5576
S25FL512SDSMFBG11
DISTI # 727-S25FL512SDSMFBG1
Cypress SemiconductorNOR Flash Nor
RoHS: Compliant
0
  • 1:$11.0000
  • 10:$10.0000
  • 25:$9.2500
  • 50:$8.5000
  • 250:$7.7500
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S25FL512SAG-AEC13

Mfr.#: S25FL512SAG-AEC13

OMO.#: OMO-S25FL512SAG-AEC13

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S25FL512SAGBHBC13

Mfr.#: S25FL512SAGBHBC13

OMO.#: OMO-S25FL512SAGBHBC13-CYPRESS-SEMICONDUCTOR

IC 512 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL512SAGBHM213

Mfr.#: S25FL512SAGBHM213

OMO.#: OMO-S25FL512SAGBHM213-CYPRESS-SEMICONDUCTOR

IC 512 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
S25FL512SAGMFVG10

Mfr.#: S25FL512SAGMFVG10

OMO.#: OMO-S25FL512SAGMFVG10-CYPRESS-SEMICONDUCTOR

Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
S25FL512SAGMFVG13

Mfr.#: S25FL512SAGMFVG13

OMO.#: OMO-S25FL512SAGMFVG13-CYPRESS-SEMICONDUCTOR

Flash Memory 512 MBIT (64 MBYTE) MIRRORBIT FLASH NON-VOLATILE MEMORY; CMOS 3.0 VOLT CORE WITH VERSATILE I/O; SERIAL PERIPHERAL INTERFACE WITH MULTI-I/O; SOIC16 PACKAGE WITH RESET# ENABLED; 105C
S25FL512SAGBHIY10

Mfr.#: S25FL512SAGBHIY10

OMO.#: OMO-S25FL512SAGBHIY10-CYPRESS-SEMICONDUCTOR

IC FLASH 512M SPI 133MHZ 24BGA FL-S
S25FL512SAGMFI013

Mfr.#: S25FL512SAGMFI013

OMO.#: OMO-S25FL512SAGMFI013-CYPRESS-SEMICONDUCTOR

Flash 512Mb 3V 133MHz Serial NOR Flash
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de S25FL512SDSMFBG11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
11,62 US$
11,62 US$
10
11,04 US$
110,44 US$
100
10,46 US$
1 046,25 US$
500
9,88 US$
4 940,65 US$
1000
9,30 US$
9 300,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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