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AS4C512M16D3LB-12BINTR

AS4C512M16D3LB-12BINTR
Mfr. #:
AS4C512M16D3LB-12BINTR
Fabricante:
Alliance Memory
Descripción:
DRAM 8G - Dual Die Package (DDP) -12 512M x 16 1.35V(1.283-1.45V) 800MHz DDR3-1600bps/pin Industrial (-40 95 C) 96-ball FBGA
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AS4C512M16D3LB-12BINTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
AS4C512M16D3LB-12BINTR más información
Atributo del producto
Valor de atributo
Fabricante:
Memoria de la Alianza
Categoria de producto:
DRACMA
RoHS:
Y
Escribe:
SDRAM - DDR3L
Ancho del bus de datos:
16 bit
Organización:
512 M x 16
Paquete / Caja:
FBGA-96
Tamaño de la memoria:
8 Gbit
Frecuencia máxima de reloj:
800 MHz
Voltaje de suministro - Máx:
1.45 V
Voltaje de suministro - Min:
1.283 V
Corriente de suministro - Máx .:
122 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 95 C
Serie:
AS4C512M16D3LB-12
Embalaje:
Carrete
Marca:
Memoria de la Alianza
Estilo de montaje:
SMD / SMT
Sensible a la humedad:
Yes
Tipo de producto:
DRACMA
Cantidad de paquete de fábrica:
2000
Subcategoría:
Memoria y almacenamiento de datos
Tags
AS4C512M16D3LB, AS4C512M1, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR3 Synchronous DRAM
Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
DDR3L SDRAM
Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding  n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
Imagen Parte # Descripción
AS4C512M16D3LA-12BIN

Mfr.#: AS4C512M16D3LA-12BIN

OMO.#: OMO-AS4C512M16D3LA-12BIN

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
AS4C512M16D3LA-12BCNTR

Mfr.#: AS4C512M16D3LA-12BCNTR

OMO.#: OMO-AS4C512M16D3LA-12BCNTR

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
AS4C512M16D3LA-12BCN

Mfr.#: AS4C512M16D3LA-12BCN

OMO.#: OMO-AS4C512M16D3LA-12BCN

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
AS4C512M16D3LA-12BINTR

Mfr.#: AS4C512M16D3LA-12BINTR

OMO.#: OMO-AS4C512M16D3LA-12BINTR

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
AS4C512M16D3LA-10BIN

Mfr.#: AS4C512M16D3LA-10BIN

OMO.#: OMO-AS4C512M16D3LA-10BIN

 DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
AS4C512M16D3L-12BIN

Mfr.#: AS4C512M16D3L-12BIN

OMO.#: OMO-AS4C512M16D3L-12BIN

 DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
AS4C512M16D3LB-12BCN

Mfr.#: AS4C512M16D3LB-12BCN

OMO.#: OMO-AS4C512M16D3LB-12BCN

 DRAM 8G, DDR3L, 512M X 16, 1.35V, 96-BALL FBGA, 0 C to 95 C
AS4C512M16D3LB-12BIN

Mfr.#: AS4C512M16D3LB-12BIN

OMO.#: OMO-AS4C512M16D3LB-12BIN

 DRAM 8G, DDR3L, 512M X 16, 1.35V, 96-BALL FBGA, -40 C to 95 C
AS4C512M16D3LA-10BCNTR

Mfr.#: AS4C512M16D3LA-10BCNTR

OMO.#: OMO-AS4C512M16D3LA-10BCNTR

 DRAM 8G 512Mx16 933MHz 1.35V DDR3 ET
AS4C512M16D3L-12BINTR

Mfr.#: AS4C512M16D3L-12BINTR

OMO.#: OMO-AS4C512M16D3L-12BINTR

 DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de AS4C512M16D3LB-12BINTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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