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CSD75301W1015

CSD75301W1015
Mfr. #:
CSD75301W1015
Descripción:
IGBT Transistors MOSFET P-Ch-Dual Common Source Pwr MOSFETs
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD75301W1015 Ficha de datos
Entrega:
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ECAD Model:
Más información:
CSD75301W1015 más información CSD75301W1015 Product Details
Atributo del producto
Valor de atributo
Fabricante
TI
categoria de producto
FET: matrices
Serie
NexFET
embalaje
Digi-ReelR
Paquete-Estuche
6-UFBGA, DSBGA
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
6-DSBGA (1x1.5)
Tipo FET
2 P-Channel (Dual)
Potencia máxima
800mW
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
195pF @ 10V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
1.2A
Rds-On-Max-Id-Vgs
100 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
2.1nC @ 4.5V
Tags
CSD75, CSD7, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
P-Channel Dual Common Source NexFET™ Power MOSFET 6-DSBGA -55 to 150
***ical
Trans MOSFET P-CH 20V 1.2A 6-Pin DSBGA T/R
***et
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET 2P-CH 20V 1.2A 6DSBGA
***th Star Micro
the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
***ark
P CH DUAL COMMON SOURCE POWER MOSFET, -20V, -1.2A, DSBGA-6; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, PP CH, 20V, 1.2A, 6DSBGA; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DSBGA; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; Module Configuration:Dual P Channel; On Resistance Rds(on):0.08ohm; Power Dissipation Pd:800mW
***nell
MOSFET, 2 CANALI P, 20V, 1.2A, 6DSBGA; Polarità Transistor:Canale P Doppio; Corrente Continua di Drain Id:-1.2A; Tensione Drain Source Vds:-20V; Resistenza di Attivazione Rds(on):0.08ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-700mV; Dissipazione di Potenza Pd:800mW; Modello Case Transistor:DSBGA; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Configurazione Modulo:Doppio a Canale P; Corrente Continua di Drain Id, Canale P:-1.2A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza di Attivazione Rds(on), Canale P:0.15ohm; Temperatura di Esercizio Min:-55°C; Tensione Drain Source Vds, Canale P:-20V
Parte # Descripción Valores Precio
CSD75301W1015
DISTI # 296-24261-2-ND		MOSFET 2P-CH 20V 1.2A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    CSD75301W1015
    DISTI # 296-24261-1-ND    		MOSFET 2P-CH 20V 1.2A 6DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      CSD75301W1015
      DISTI # 296-24261-6-ND      		MOSFET 2P-CH 20V 1.2A 6DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        CSD75301W1015
        DISTI # CSD75301W1015        		Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD75301W1015)
        RoHS: Compliant
        Min Qty: 962        		Americas - 0
        • 962:$0.3769
        • 964:$0.3589
        • 1926:$0.3469
        • 4810:$0.3349
        • 9620:$0.3259
        CSD75301W1015
        DISTI # 595-CSD75301W1015        		MOSFET P-Ch-Dual Common Source Pwr MOSFETs
        RoHS: Compliant        		0
          CSD75301W1015Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		1760
          • 1000:$0.3800
          • 500:$0.4000
          • 100:$0.4200
          • 25:$0.4400
          • 1:$0.4700
          CSD75301W1015
          DISTI # 1892455          		MOSFET, PP CH, 20V, 1.2A, 6DSBGA
          RoHS: Compliant          		988
          • 5:£0.6490
          • 25:£0.5860
          • 100:£0.4450
          • 250:£0.4190
          • 500:£0.3940
          Imagen Parte # Descripción
          CSD75301W1015

          Mfr.#: CSD75301W1015

          OMO.#: OMO-CSD75301W1015

          		 MOSFET P-Ch-Dual Common Source Pwr MOSFETs
          CSD75301W1015

          Mfr.#: CSD75301W1015

          OMO.#: OMO-CSD75301W1015-TEXAS-INSTRUMENTS

          		 IGBT Transistors MOSFET P-Ch-Dual Common Source Pwr MOSFETs
          Disponibilidad
          Valores:
          Available
          En orden:
          1000
          Ingrese la cantidad:
          El precio actual de CSD75301W1015 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          0,49 US$
          0,49 US$
          10
          0,46 US$
          4,64 US$
          100
          0,44 US$
          44,00 US$
          500
          0,42 US$
          207,75 US$
          1000
          0,39 US$
          391,10 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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