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FFSH30120A

FFSH30120A
Mfr. #:
FFSH30120A
Fabricante:
ON Semiconductor
Descripción:
Schottky Diodes & Rectifiers 1200V 30A SIC SBD
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FFSH30120A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FFSH30120A DatasheetFFSH30120A Datasheet (P4-P6)FFSH30120A Datasheet (P7-P8)
ECAD Model:
Más información:
FFSH30120A más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Diodos y rectificadores Schottky
RoHS:
Y
Producto:
Diodos de carburo de silicio Schottky
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-2LD
Si - Corriente directa:
30 A
Vrrm - Voltaje inverso repetitivo:
1200 V
Vf - Voltaje directo:
1.45 V
Ifsm - Corriente de sobretensión directa:
230 A
Configuración:
Único
Tecnología:
Sic
Ir - Corriente inversa:
200 uA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Marca:
EN Semiconductor
Pd - Disipación de energía:
500 W
Tipo de producto:
Diodos y rectificadores Schottky
Cantidad de paquete de fábrica:
450
Subcategoría:
Diodes & Rectifiers
trr - Tiempo de recuperación inverso:
-
Vr - Voltaje inverso:
1200 V
Tags
FFSH301, FFSH3, FFSH, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Rectifier Diode, Schottky, 1 Phase, 1 Element, 46A, 1200V V(RRM), Silicon Carbide, TO-247
***emi
SiC Diode, 1200V, 30A, TO-247-2
*** Electronics
Schottky Barrier Diodes (SBD) TO-247-2L RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ure Electronics
Schottky Diodes Rectifiers 1200V 30A SIC
***i-Key
DIODE SIL CARB 1.2KV 46A TO247-2
***nell
SIC SCHOTTKY DIODE, 1.2KV, 30A, TO-247; Product Range: -; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 1.2kV; Continuous Forward Current If: 30A; Total Capacitive Charge Qc: 175nC; Diode Case Style: TO-247; No. of Pins: 2 Pin; Junction Temperature Tj Max: 175°C; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2018)
FFSH SiC Schottky Diodes
ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Parte # Mfg. Descripción Valores Precio
FFSH30120A
DISTI # V99:2348_21690277		ON SemiconductorSilicon Carbide Schottky Diode393
  • 10:$14.1010
  • 1:$15.3260
FFSH30120ADN-F155
DISTI # V79:2366_23246359		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1194
  • 100:$11.8300
  • 25:$13.3300
  • 10:$13.9400
  • 1:$15.1100
FFSH30120ADN-F155
DISTI # V99:2348_16116318		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1186
  • 100:$12.7000
  • 25:$13.3300
  • 10:$13.9400
  • 1:$15.1100
FFSH30120A
DISTI # V36:1790_21690277		ON SemiconductorSilicon Carbide Schottky Diode0
    FFSH30120A
    DISTI # FFSH30120AOS-ND    		ON Semiconductor1200V 30A SIC SBD
    RoHS: Not compliant
    Min Qty: 1
    Container: Tube    		322In Stock
    • 450:$11.9280
    • 25:$14.2364
    • 10:$14.8520
    • 1:$16.1600
    FFSH30120ADN-F155
    DISTI # FFSH30120ADN-F155-ND    		ON SemiconductorDIODE SIC 1200V 15A TO247
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Temporarily Out of Stock
    • 450:$12.1520
    FFSH30120ADN-F155
    DISTI # 31352888    		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1167850
    • 450:$11.9375
    FFSH30120ADN-F155
    DISTI # 30677123    		ON Semiconductor1200V SIC SBD 30A TO247 PKG (110350
    • 450:$11.2005
    FFSH30120A
    DISTI # 27545111    		ON SemiconductorSilicon Carbide Schottky Diode393
    • 10:$14.1010
    • 1:$15.3260
    FFSH30120ADN-F155
    DISTI # 32380041    		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1194
    • 100:$11.8300
    • 25:$13.3300
    • 10:$13.9400
    • 1:$15.1100
    FFSH30120ADN-F155
    DISTI # 25944271    		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1186
    • 100:$12.7000
    • 25:$13.3300
    • 10:$13.9400
    • 1:$15.1100
    FFSH30120ADN_F155
    DISTI # FFSH30120ADN-F155    		ON SemiconductorDiode Schottky 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: FFSH30120ADN-F155)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 2250
    • 4500:$9.5900
    • 2250:$9.8900
    • 1350:$9.9900
    • 900:$10.0900
    • 450:$10.1900
    FFSH30120A
    DISTI # FFSH30120A    		ON SemiconductorDiode SiC Schottky 1200V 30A 2-Pin TO-247 Tube - Rail/Tube (Alt: FFSH30120A)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 4500:$9.2900
    • 2250:$9.4900
    • 1350:$9.5900
    • 900:$9.6900
    • 450:$9.7900
    FFSH30120ADN_F155
    DISTI # FFSH30120ADN-F155    		ON SemiconductorDiode Schottky 1200V 30A 3-Pin TO-247 Tube - Bulk (Alt: FFSH30120ADN-F155)
    Min Qty: 29
    Container: Bulk    		Americas - 0
    • 290:$10.6900
    • 145:$10.9900
    • 87:$11.0900
    • 29:$11.2900
    • 58:$11.2900
    FFSH30120A
    DISTI # 62AC6884    		ON SemiconductorSIC SCHOTTKY DIODE, 1.2KV, 30A, TO-247,Product Range:-,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:30A,Total Capacitive Charge Qc:175nC,Diode Case Style:TO-247,No. of RoHS Compliant: Yes443
    • 250:$13.3600
    • 100:$13.9500
    • 50:$14.7700
    • 25:$15.5800
    • 10:$16.1800
    • 1:$17.4300
    FFSH30120ADN-F155.
    DISTI # 96AC0054    		ON SemiconductorSIC TO247 SBD 30A 1200V ROHS COMPLIANT: YES2250
    • 4500:$9.5900
    • 2250:$9.8900
    • 1350:$9.9900
    • 900:$10.0900
    • 1:$10.1900
    FFSH30120A
    DISTI # 863-FFSH30120A    		ON SemiconductorSchottky Diodes & Rectifiers 1200V 30A SIC SBD
    RoHS: Compliant    		468
    • 1:$15.3900
    • 10:$14.1500
    • 25:$13.5600
    • 100:$11.9500
    • 250:$11.3600
    • 500:$10.6300
    FFSH30120ADN-F155
    DISTI # 512-FFSH30120ADNF155    		ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 30A
    RoHS: Compliant    		132
    • 1:$16.0000
    • 10:$14.7200
    • 25:$14.1100
    • 100:$12.4300
    • 250:$11.8200
    • 500:$11.0600
    FFSH30120ADN-F155ON SemiconductorRectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 1200V V(RRM), Silicon Carbide, TO-247AB
    RoHS: Compliant    		1800
    • 1000:$11.4600
    • 500:$12.0600
    • 100:$12.5600
    • 25:$13.1000
    • 1:$14.1100
    FFSH30120ADN-F155Fairchild Semiconductor CorporationRectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 1200V V(RRM), Silicon Carbide, TO-247AB
    RoHS: Compliant    		434
    • 1000:$11.4600
    • 500:$12.0600
    • 100:$12.5600
    • 25:$13.1000
    • 1:$14.1100
    FFSH30120A
    DISTI # 1784269    		ON Semiconductor1200V 30ASIC SBD, TU450
    • 150:£13.1150
    • 30:£14.1230
    FFSH30120A
    DISTI # 2895627    		ON SemiconductorSIC SCHOTTKY DIODE, 1.2KV, 30A, TO-247443
    • 100:£13.3400
    • 50:£14.2900
    • 10:£15.4800
    • 5:£17.2700
    • 1:£20.8500
    FFSH30120ADN-F155
    DISTI # 2610669    		ON SemiconductorDIODE, SILICON CARBIDE, 1.2KV, TO-247387
    • 100:£8.5400
    • 50:£9.1200
    • 10:£9.6800
    • 5:£10.9900
    • 1:£11.3000
    FFSH30120A
    DISTI # 2895627    		ON SemiconductorSIC SCHOTTKY DIODE, 1.2KV, 30A, TO-247
    RoHS: Compliant    		443
    • 250:$15.3500
    • 100:$16.1200
    • 50:$17.2600
    • 10:$18.6000
    • 5:$19.7300
    • 1:$21.0200
    FFSH30120ADN-F155
    DISTI # 2610669    		ON SemiconductorDIODE, SILICON CARBIDE, 1.2KV, TO-247
    RoHS: Compliant    		387
    • 100:$19.3500
    • 10:$20.5300
    • 1:$21.8700
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    Disponibilidad
    Valores:
    468
    En orden:
    2451
    Ingrese la cantidad:
    El precio actual de FFSH30120A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    15,81 US$
    15,81 US$
    10
    14,54 US$
    145,40 US$
    25
    13,93 US$
    348,25 US$
    100
    12,28 US$
    1 228,00 US$
    250
    11,67 US$
    2 917,50 US$
    500
    10,92 US$
    5 460,00 US$
    1000
    10,77 US$
    10 770,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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