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RN1313(TE85L,F)

RN1313(TE85L,F)
Mfr. #:
RN1313(TE85L,F)
Fabricante:
Toshiba
Descripción:
Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RN1313(TE85L,F) Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Toshiba
Categoria de producto:
Transistores bipolares - Pre-polarizados
RoHS:
Y
Configuración:
Único
Polaridad del transistor:
NPN
Resistencia de entrada típica:
47 kOhms
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SC-70
Colector de CC / Ganancia base hfe Min:
120
Voltaje colector-emisor VCEO Max:
50 V
Corriente continua del colector:
100 mA
Corriente máxima del colector de CC:
100 mA
Pd - Disipación de energía:
100 mW
Temperatura máxima de funcionamiento:
+ 125 C
Serie:
RN1313
Embalaje:
Carrete
Ganancia de corriente CC hFE Max:
700
Altura:
0.9 mm
Longitud:
2 mm
Ancho:
1.25 mm
Marca:
Toshiba
Tipo de producto:
BJTs - Transistores bipolares - Pre-polarizados
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Unidad de peso:
0.000988 oz
Tags
RN1313(T, RN1313, RN131, RN13, RN1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***S
French Electronic Distributor since 1988
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***
TRANS BI-POLAR 50V
***ical
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***et
X34 Pb-F USM TRANSISTOR Pd 100mW F 250Mhz (LF)
*** Americas
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***
TRANS BI-POLAR 50V
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Bipolar Transistors - BJT Trans NPN GP 50V 0.1A
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Trans GP BJT NPN 50V 0.1A 3-Pin UMT3F T/R
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TRANS, NPN, 50V, 0.1A, 150DEG C, 0.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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DTC143TUA Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-70
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Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R
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TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF
***ark
TRANSISTOR; DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:5mA; Voltage, Vce Sat Max:300mV; Power Dissipation:200mW; Min Hfe:100; ft,;RoHS Compliant: Yes
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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DTC114TUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
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Trans Digital BJT NPN 50V 100mA 3-Pin UMTF T/R
***ment14 APAC
Transistor; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA; Base Input
***ark
TRANSISTOR;DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:10mA; Voltage, Vce Sat Max:300mV; Power Dissipation:200mW; Min Hfe:100; ft,;RoHS Compliant: Yes
***nell
TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC114T Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 10mA; DC Collector Current: 10mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
Parte # Mfg. Descripción Valores Precio
RN1313(TE85L,F)
DISTI # RN1313(TE85LF)CT-ND		Toshiba America Electronic ComponentsTRANS PREBIAS NPN 0.15W USM
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2965In Stock
  • 1000:$0.0552
  • 500:$0.0811
  • 250:$0.0952
  • 100:$0.1514
  • 25:$0.1948
  • 10:$0.2700
  • 1:$0.3000
RN1313(TE85L,F)
DISTI # RN1313(TE85LF)DKR-ND		Toshiba America Electronic ComponentsTRANS PREBIAS NPN 0.15W USM
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    RN1313(TE85L,F)
    DISTI # RN1313(TE85LF)TR-ND    		Toshiba America Electronic ComponentsTRANS PREBIAS NPN 0.15W USM
    RoHS: Compliant
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
      RN1313(TE85L,F)
      DISTI # RN1313(TE85L,F)      		Toshiba America Electronic ComponentsTrans Digital BJT NPN 50V 100mA 3-Pin USM T/R - Tape and Reel (Alt: RN1313(TE85L,F))
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
        RN1313(TE85L,F)
        DISTI # 757-RN1313(TE85L,F)        		Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
        RoHS: Compliant        		6000
        • 1:$0.2900
        • 10:$0.1860
        • 100:$0.0780
        • 1000:$0.0530
        • 3000:$0.0400
        RN1313(TE85L,F)Toshiba America Electronic Components 3678
          Imagen Parte # Descripción
          RN1313(TE85L,F)

          Mfr.#: RN1313(TE85L,F)

          OMO.#: OMO-RN1313-TE85L-F-

          		 Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
          RN1313(TE85L,F)

          Mfr.#: RN1313(TE85L,F)

          OMO.#: OMO-RN1313-TE85L-F--TOSHIBA-SEMICONDUCTOR-AND-STOR

          		 Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 47Kohms
          RN1313(TE85LF)CT-ND

          Mfr.#: RN1313(TE85LF)CT-ND

          OMO.#: OMO-RN1313-TE85LF-CT-ND-1190

          		 Nuevo y original
          RN1313(TE85LF)DKR-ND

          Mfr.#: RN1313(TE85LF)DKR-ND

          OMO.#: OMO-RN1313-TE85LF-DKR-ND-1190

          		 Nuevo y original
          RN1313(TE85LF)TR-ND

          Mfr.#: RN1313(TE85LF)TR-ND

          OMO.#: OMO-RN1313-TE85LF-TR-ND-1190

          		 Nuevo y original
          RN1313(TE85LF)

          Mfr.#: RN1313(TE85LF)

          OMO.#: OMO-RN1313-TE85LF--1190

          		 Nuevo y original
          Disponibilidad
          Valores:
          Available
          En orden:
          1989
          Ingrese la cantidad:
          El precio actual de RN1313(TE85L,F) es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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