FDMA8051L

Mfr. #:: FDMA8051L
Fabricante:: ON Semiconductor / Fairchild
Descripción:: MOSFET FET 40V 14.0 MOHM MLP22
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDMA8051L Ficha de datos
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Más información:: FDMA8051L más información

Atributo del producto
Valor de atributo

Fabricante:: EN Semiconductor

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: MicroFET-6

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 40 V

Id - Corriente de drenaje continua:: 10 A

Rds On - Resistencia de la fuente de drenaje:: 18 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 1.6 V

Qg - Carga de puerta:: 14 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 2.4 W

Configuración:: Único

Nombre comercial:: PowerTrench

Embalaje:: Carrete

Altura:: 0.75 mm

Longitud:: 2 mm

Serie:: FDMA8051L

Tipo de transistor:: 1 N-Channel

Ancho:: 2 mm

Marca:: ON Semiconductor / Fairchild

Otoño:: 1.8 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 1.8 ns

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 17 ns

Tiempo típico de retardo de encendido:: 6.4 ns

Unidad de peso:: 0.001058 oz

Tags: FDMA8, FDMA, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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FDMA8051L Descripción

***emi: N-Channel PowerTrench® MOSFET 40V, 10A, 14mΩ

***Yang: Transistor MOSFET N-CH 40V 10A 6-Pin WDFN T/R - Tape and Reel

***sible Micro: Transistor, MOSFET, N-Channel, 2x2mm, 40V, 10A, 2.4W, 6-WDF

***ment14 APAC: MOSFET, N-CH, 40V, 10A, 2.4W, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Source Voltage Vds:40V; On Resistance

***rchild Semiconductor: This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.

***nell: MOSFET, N-CH, 40V, 10A, 2.4W, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 2.4W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***p One Stop Global: Trans MOSFET P-CH 40V 10.8A Automotive 3-Pin(2+Tab) TO-252 T/R

***ure Electronics: P-Channel 40 V 12.3 mOhm 50 nC Surface Mount PowerTrench Mosfet - DPAK

***roFlash: Power Field-Effect Transistor, 10.8A I(D), 40V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

***Yang: Transistor: P-MOSFET, unipolar, -40V, -50A, 12.3ohm, 69W, -55+175 deg.C, SMD, TO252(DPAK)

***emi: PowerTrench® MOSFET, P-Channel, -40V, -50A, 12.3mΩ

*** Stop Electro: Power Field-Effect Transistor, 50A I(D), 40V, 0.0187ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.

***nell: MOSFET, P CH, 40V, 10.8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):10.1mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -50 / Drain-Source Voltage (Vds) V = -40 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 7 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 69

***emi: P-Channel PowerTrench® MOSFET, 40V, -11A, 13mΩ

*** Electronics: ON SEMICONDUCTOR - FDS4675 - Power MOSFET, P Channel, 40 V, 11 A, 0.013 ohm, SOIC, Surface Mount

***Yang: Trans MOSFET P-CH 40V 11A 8-Pin SOIC N T/R - Tape and Reel

***ment14 APAC: MOSFET, P, SMD, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:2.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-11A; Package / Case:SOIC; Power Dissipation Pd:2.4W; Termination Type:SMD; Voltage Vds Typ:-40V; Voltage Vgs Max:-1.4V; Voltage Vgs Rds on Measurement:-10V

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).

***ure Electronics: Single N-Channel 30 V 10 mOhm 13 nC OptiMOS Power Mosfet - TSDSON-8

***ment14 APAC: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: N-Channel 30 V 12 mOhm OptiMOS3 Power-Mosfet - PG-TDSON-8

***ment14 APAC: MOSFET, N CH, 39A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:39A; Power Dissipation Pd:28W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ark: Mosfet Transistor, N Channel, 13 A, 30 V, 10 Mohm, 10 V, 1.8 V

***et Japan: Transistor MOSFET N-CH 30V 13A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET, 30V, 13A, 10 mOhm, 9.5 nC Qg, SO-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipa

FDMA8051L Más información

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDMA8051L DISTI # V72:2272_06337828	ON Semiconductor	Trans MOSFET N-CH 40V 10A 6-Pin MLP EP T/R	2400	1000:$0.4423 500:$0.5409 250:$0.5782 100:$0.6425 25:$0.7501 10:$0.9168 1:$1.0844
FDMA8051L DISTI # V36:1790_06337828	ON Semiconductor	Trans MOSFET N-CH 40V 10A 6-Pin MLP EP T/R	0	3000000:$0.3495 1500000:$0.3497 300000:$0.3642 30000:$0.3873 3000:$0.3911
FDMA8051L DISTI # FDMA8051LCT-ND	ON Semiconductor	MOSFET N-CH 40V 6-MLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11812In Stock	1000:$0.4056 500:$0.5137 100:$0.6219 10:$0.7980 1:$0.8900
FDMA8051L DISTI # FDMA8051LDKR-ND	ON Semiconductor	MOSFET N-CH 40V 6-MLP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11812In Stock	1000:$0.4056 500:$0.5137 100:$0.6219 10:$0.7980 1:$0.8900
FDMA8051L DISTI # FDMA8051LTR-ND	ON Semiconductor	MOSFET N-CH 40V 6-MLP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.3325 15000:$0.3360 6000:$0.3491 3000:$0.3675
FDMA8051L DISTI # 31984721	ON Semiconductor	Trans MOSFET N-CH 40V 10A 6-Pin MLP EP T/R	2400	20:$1.0844
FDMA8051L DISTI # FDMA8051L	ON Semiconductor	Trans MOSFET N-CH 40V 10A 6-Pin Micro FET T/R (Alt: FDMA8051L) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.3099 18000:€0.3339 12000:€0.3619 6000:€0.3949 3000:€0.4829
FDMA8051L DISTI # FDMA8051L	ON Semiconductor	Trans MOSFET N-CH 40V 10A 6-Pin Micro FET T/R - Tape and Reel (Alt: FDMA8051L) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3079 18000:$0.3159 12000:$0.3199 6000:$0.3239 3000:$0.3259
FDMA8051L DISTI # FDMA8051L	ON Semiconductor	Trans MOSFET N-CH 40V 10A 6-Pin Micro FET T/R - Bulk (Alt: FDMA8051L) Min Qty: 893 Container: Bulk	Americas - 0	8930:$0.3449 4465:$0.3539 2679:$0.3579 1786:$0.3629 893:$0.3659
FDMA8051L DISTI # 38X5350	ON Semiconductor	FET 40V 14.0 MOHM MLP22 / REEL	0	24000:$0.3220 9000:$0.3320 1:$0.3450
FDMA8051L DISTI # 99AC9164	ON Semiconductor	MOSFET, N-CH, 40V, 10A, 2.4W, WDFN,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	0	1000:$0.3790 500:$0.4810 250:$0.5120 100:$0.5430 50:$0.5980 25:$0.6520 10:$0.7070 1:$0.8380
FDMA8051L. DISTI # 96AC0017	ON Semiconductor	FET 40V 14.0 MOHM MLP22 ROHS COMPLIANT: YES	3000	24000:$0.3220 9000:$0.3320 1:$0.3450
FDMA8051L DISTI # 512-FDMA8051L	ON Semiconductor	MOSFET FET 40V 14.0 MOHM MLP22 RoHS: Compliant	5080	1:$0.8300 10:$0.7000 100:$0.5380 500:$0.4760 1000:$0.3750 3000:$0.3330 9000:$0.3210 24000:$0.3100
FDMA8051L	ON Semiconductor	Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4120	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
FDMA8051L	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 10A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	502	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
FDMA8051L DISTI # 8648170P	ON Semiconductor	MOSFET N-CH 40V 10A POWERTRENCH MLP6, RL	14310	3000:£0.2920 1000:£0.3170 500:£0.4030 50:£0.4970
FDMA8051L DISTI # 2992326	ON Semiconductor	MOSFET, N-CH, 40V, 10A, 2.4W, WDFN RoHS: Compliant	3000	1000:$0.4730 500:$0.5330 250:$0.5880 100:$0.6440 25:$0.9740 5:$1.0700
FDMA8051L DISTI # 2992326	ON Semiconductor	MOSFET, N-CH, 40V, 10A, 2.4W, WDFN	3000	500:£0.3450 250:£0.3680 100:£0.3900 10:£0.5570 1:£0.6880

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Disponibilidad

Valores:: Available
En orden:: 1988
Ingrese la cantidad:

El precio actual de FDMA8051L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,83 US$~~; ~~0,83 US$~~

10: ~~0,70 US$~~; ~~7,00 US$~~

100: ~~0,54 US$~~; ~~53,80 US$~~

500: ~~0,48 US$~~; ~~238,00 US$~~

1000: ~~0,38 US$~~; ~~375,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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FDMA8051L

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes