OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

A3T18H455W23SR6

A3T18H455W23SR6
Mfr. #:
A3T18H455W23SR6
Fabricante:
NXP Semiconductors
Descripción:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A3T18H455W23SR6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A3T18H455W23SR6 DatasheetA3T18H455W23SR6 Datasheet (P4-P6)A3T18H455W23SR6 Datasheet (P7-P9)A3T18H455W23SR6 Datasheet (P10-P12)A3T18H455W23SR6 Datasheet (P13-P15)A3T18H455W23SR6 Datasheet (P16-P17)
ECAD Model:
Más información:
A3T18H455W23SR6 más información A3T18H455W23SR6 Product Details
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N dual
Tecnología:
Si
Id - Corriente de drenaje continua:
3.6 A
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 65 V
Ganar:
16.7 dB
Potencia de salida:
87 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
ACP-1230S-4L2S
Embalaje:
Carrete
Frecuencia de operación:
1805 MHz to 1880 MHz
Escribe:
RF Power MOSFET
Marca:
Semiconductores NXP
Número de canales:
2 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
150
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
1.4 V
Parte # Alias:
935354975128
Unidad de peso:
0.212803 oz
Tags
A3T18, A3T1, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Airfast Rf Power Ldmos Transistor, 1805-1880 Mhz, 87 W Avg., 30 V
***et
RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 30 V 590 mA 87 W 4-Pin ACP-1230S T/R
***W
RF Power Transistor, 1.805 to 1.88 GHz, 87 W Avg., Typ Gain in dB is 17.4 @ 1840 MHz, 30 V, SOT1800-4, LDMOS
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Parte # Mfg. Descripción Valores Precio
A3T18H455W23SR6
DISTI # A3T18H455W23SR6-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$122.2403
A3T18H455W23SR6
DISTI # A3T18H455W23SR6		Avnet, Inc.RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 30 V 590 mA 87 W 4-Pin ACP-1230S T/R - Tape and Reel (Alt: A3T18H455W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 1500:$116.8900
  • 900:$119.1900
  • 600:$123.6900
  • 300:$128.6900
  • 150:$133.8900
A3T18H455W23SR6
DISTI # A3T18H455W23SR6		Avnet, Inc.RF Power Lateral MOSFET N-Channel Enhancement Mode LDMOS Transistor 30 V 590 mA 87 W 4-Pin ACP-1230S T/R (Alt: A3T18H455W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel		Europe - 0
  • 1500:€110.3900
  • 900:€113.1900
  • 600:€116.9900
  • 300:€120.7900
  • 150:€122.9900
A3T18H455W23SR6
DISTI # 771-A3T18H455W23SR6		NXP SemiconductorsRF MOSFET Transistors A3T18H455W23S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant		0
  • 150:$113.7100
A3T18H455W23SR6
DISTI # A3T18H455W23SR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		88
  • 1:$153.6800
  • 10:$142.0500
  • 25:$137.8600
Imagen Parte # Descripción
A3T18H400W23SR6

Mfr.#: A3T18H400W23SR6

OMO.#: OMO-A3T18H400W23SR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 71 W Avg., 28 V
A3T18H455W23SR6

Mfr.#: A3T18H455W23SR6

OMO.#: OMO-A3T18H455W23SR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 87 W Avg., 30 V
A3T18H400W23SR6

Mfr.#: A3T18H400W23SR6

OMO.#: OMO-A3T18H400W23SR6-NXP-SEMICONDUCTORS

 AIRFAST RF POWER LDMOS TRANSISTO
A3T18H455W23SR6

Mfr.#: A3T18H455W23SR6

OMO.#: OMO-A3T18H455W23SR6-NXP-SEMICONDUCTORS

 AIRFAST RF POWER LDMOS TRANSISTO
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de A3T18H455W23SR6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Empezar con
Top