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IPD60R3K3C6ATMA1

IPD60R3K3C6ATMA1
Mfr. #:
IPD60R3K3C6ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 650V 1.7A DPAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R3K3C6ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
1.7 A
Rds On - Resistencia de la fuente de drenaje:
3.3 Ohms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
4.6 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
18.1 W
Configuración:
Único
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
CoolMOS C6
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Otoño:
60 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
8 ns
Parte # Alias:
IPD60R3K3C6 SP001117718
Unidad de peso:
0.139332 oz
Tags
IPD60R3K3, IPD60R3K, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***nell
MOSFET, N CH, 650V, 1.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 2.97ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 18.1W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Parte # Mfg. Descripción Valores Precio
IPD60R3K3C6ATMA1
DISTI # V72:2272_06391031		Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 1000:$0.3062
  • 500:$0.3279
  • 250:$0.3643
  • 100:$0.4048
  • 25:$0.5469
  • 10:$0.6856
  • 1:$0.8203
IPD60R3K3C6ATMA1
DISTI # V36:1790_06391031		Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
    IPD60R3K3C6ATMA1
    DISTI # IPD60R3K3C6ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 600V 1.7A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 25000:$0.2369
    • 12500:$0.2420
    • 5000:$0.2513
    • 2500:$0.2699
    IPD60R3K3C6ATMA1
    DISTI # IPD60R3K3C6ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 1.7A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
    • 1000:$0.3067
    • 500:$0.3834
    • 100:$0.4850
    • 10:$0.6330
    • 1:$0.7200
    IPD60R3K3C6ATMA1
    DISTI # IPD60R3K3C6ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 600V 1.7A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
    • 1000:$0.3067
    • 500:$0.3834
    • 100:$0.4850
    • 10:$0.6330
    • 1:$0.7200
    IPD60R3K3C6ATMA1
    DISTI # 20336743    		Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		12500
    • 2500:$0.2129
    IPD60R3K3C6ATMA1
    DISTI # 31627991    		Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant    		2500
    • 1000:$0.3176
    • 500:$0.3279
    • 250:$0.3643
    • 100:$0.4048
    • 30:$0.6006
    IPD60R3K3C6ATMA1
    DISTI # IPD60R3K3C6ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R3K3C6ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.2150
    • 15000:$0.2189
    • 10000:$0.2265
    • 5000:$0.2350
    • 2500:$0.2438
    IPD60R3K3C6ATMA1
    DISTI # 13AC9045    		Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 13AC9045)
    RoHS: Compliant
    Min Qty: 5
    Container: Ammo Pack    		Americas - 0
      IPD60R3K3C6ATMA1
      DISTI # SP001117718      		Infineon Technologies AGTrans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R (Alt: SP001117718)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.2339
      • 15000:€0.2519
      • 10000:€0.2799
      • 5000:€0.3139
      • 2500:€0.3699
      IPD60R3K3C6ATMA1
      DISTI # 13AC9045      		Infineon Technologies AGMOSFET, N-CH, 600V, 1.7A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2.97ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes3766
      • 1000:$0.2740
      • 500:$0.2970
      • 250:$0.3190
      • 100:$0.3420
      • 50:$0.4050
      • 25:$0.4680
      • 10:$0.5300
      • 1:$0.6360
      IPD60R3K3C6ATMA1.
      DISTI # 27AC6732      		Infineon Technologies AGLOW POWER_LEGACY ROHS COMPLIANT: YES0
      • 25000:$0.2180
      • 15000:$0.2220
      • 10000:$0.2300
      • 5000:$0.2380
      • 1:$0.2470
      IPD60R3K3C6ATMA1
      DISTI # 726-IPD60R3K3C6ATMA1      		Infineon Technologies AGMOSFET N-Ch 650V 1.7A DPAK-20
      • 1:$0.6300
      • 10:$0.5250
      • 100:$0.3390
      • 1000:$0.2710
      IPD60R3K3C6ATMA1
      DISTI # 2726052      		Infineon Technologies AGMOSFET, N-CH, 600V, 1.7A, TO-252-3
      RoHS: Compliant      		3715
      • 1000:$0.4660
      • 500:$0.5820
      • 100:$0.7850
      • 10:$1.0200
      • 1:$1.1700
      IPD60R3K3C6ATMA1
      DISTI # 2726052      		Infineon Technologies AGMOSFET, N-CH, 600V, 1.7A, TO-252-33720
      • 500:£0.2280
      • 250:£0.2460
      • 100:£0.2650
      • 25:£0.4280
      • 5:£0.4620
      Imagen Parte # Descripción
      IPD60R3K3C6ATMA1

      Mfr.#: IPD60R3K3C6ATMA1

      OMO.#: OMO-IPD60R3K3C6ATMA1

      		 MOSFET N-Ch 650V 1.7A DPAK-2
      IPD60R3K3C6

      Mfr.#: IPD60R3K3C6

      OMO.#: OMO-IPD60R3K3C6

      		 MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6
      IPD60R3K4CEAUMA1

      Mfr.#: IPD60R3K4CEAUMA1

      OMO.#: OMO-IPD60R3K4CEAUMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 650V 2.6A TO252-3
      IPD60R3K3C6

      Mfr.#: IPD60R3K3C6

      OMO.#: OMO-IPD60R3K3C6-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 600V 1.7A TO252-3
      IPD60R3K3C6 , 2SD2345-R

      Mfr.#: IPD60R3K3C6 , 2SD2345-R

      OMO.#: OMO-IPD60R3K3C6-2SD2345-R-1190

      		 Nuevo y original
      IPD60R3K3C6BTMA1

      Mfr.#: IPD60R3K3C6BTMA1

      OMO.#: OMO-IPD60R3K3C6BTMA1-1190

      		 MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6
      IPD60R3K3C6ATMA1

      Mfr.#: IPD60R3K3C6ATMA1

      OMO.#: OMO-IPD60R3K3C6ATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-Ch 650V 1.7A DPAK-2
      Disponibilidad
      Valores:
      Available
      En orden:
      1993
      Ingrese la cantidad:
      El precio actual de IPD60R3K3C6ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,63 US$
      0,63 US$
      10
      0,52 US$
      5,25 US$
      100
      0,34 US$
      33,90 US$
      1000
      0,27 US$
      271,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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