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BSM50GB120DN2

BSM50GB120DN2
Mfr. #:
BSM50GB120DN2
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules 1200V 50A DUAL
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM50GB120DN2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Configuración:
Medio puente
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.5 V
Corriente continua del colector a 25 C:
78 A
Corriente de fuga puerta-emisor:
200 nA
Pd - Disipación de energía:
400 W
Paquete / Caja:
Half Bridge1
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Altura:
30.5 mm
Longitud:
94 mm
Ancho:
34 mm
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
10
Subcategoría:
IGBT
Parte # Alias:
BSM50GB120DN2HOSA1 SP000095922
Tags
BSM50GB120DN2, BSM50GB120DN, BSM50GB120D, BSM50GB120, BSM50GB12, BSM50GB1, BSM50GB, BSM50G, BSM5, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V, 50A, DUAL
***nell
IGBT MODULE, DUAL, 1200V; Transistor type:Series IGBT(Half bridge) + Freewheel Diodes; Voltage, Vces:1200V; Current, Ic continuous a max:50A; Voltage, Vce sat max:3V; Power dissipation:400W; Case style:Half Bridge 1; Case style, alternate:M34a; Current, Icm pulsed:100A; Power, Pd:400W; Temperature, current:80°C; Termination Type:Screw; Time, fall:100ns; Time, rise:100ns; Voltage, Vceo:1200V
Parte # Mfg. Descripción Valores Precio
BSM50GB120DN2HOSA1
DISTI # V36:1790_18204614		Infineon Technologies AGBSM50GB120DN2HOSA10
  • 10000:$57.2200
  • 5000:$57.2300
  • 1000:$60.7800
  • 100:$70.0100
  • 10:$71.7600
BSM50GB120DN2HOSA1
DISTI # BSM50GB120DN2HOSA1-ND		Infineon Technologies AGIGBT 2 MED POWER 34MM-1
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$71.7560
BSM50GB120DN2
DISTI # SP000095922		Infineon Technologies AGTrans IGBT Module N-CH 1200V 78A ±20V Screw Mount (Alt: SP000095922)
Min Qty: 1		Europe - 691
    BSM 50 GB 120 DN2
    DISTI # BSM50GB120DN2    		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 78A 7-Pin 34mm (Alt: BSM50GB120DN2)
    RoHS: Compliant
    Min Qty: 10    		Asia - 0
    • 500:$59.7570
    • 250:$60.5231
    • 100:$61.3091
    • 50:$62.1158
    • 30:$63.7946
    • 20:$65.5667
    • 10:$67.4400
    BSM50GB120DN2HOSA1
    DISTI # BSM50GB120DN2HOSA1    		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 50A nom - Trays (Alt: BSM50GB120DN2HOSA1)
    RoHS: Compliant
    Min Qty: 10
    Container: Tray    		Americas - 0
      BSM50GB120DN2
      DISTI # 641-BSM50GB120DN2      		Infineon Technologies AGIGBT Modules 1200V 50A DUAL
      RoHS: Compliant      		0
        BSM50GB120DN2HOSA1
        DISTI # XSKDRABV0052102        		Infineon Technologies AG 
        RoHS: Compliant        		547 in Stock0 on Order
        • 547:$82.3500
        • 10:$88.2400
        BSM50GB120DN2
        DISTI # 1496954        		Infineon Technologies AGIGBT MODULE, DUAL, 1200V
        RoHS: Compliant        		0
        • 100:$98.9000
        • 25:$106.7100
        • 10:$108.8500
        • 5:$111.7400
        • 1:$113.8400
        Imagen Parte # Descripción
        BSM50GB60DLC

        Mfr.#: BSM50GB60DLC

        OMO.#: OMO-BSM50GB60DLC

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        BSM50GB120DN2

        Mfr.#: BSM50GB120DN2

        OMO.#: OMO-BSM50GB120DN2

        		 IGBT Modules 1200V 50A DUAL
        BSM50GA120D

        Mfr.#: BSM50GA120D

        OMO.#: OMO-BSM50GA120D-1190

        		 Nuevo y original
        BSM50GB100DN1

        Mfr.#: BSM50GB100DN1

        OMO.#: OMO-BSM50GB100DN1-1190

        		 Nuevo y original
        BSM50GB120N2

        Mfr.#: BSM50GB120N2

        OMO.#: OMO-BSM50GB120N2-1190

        		 Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel
        BSM50GP120BOSA1

        Mfr.#: BSM50GP120BOSA1

        OMO.#: OMO-BSM50GP120BOSA1-INFINEON-TECHNOLOGIES

        		 IGBT MODULE 1200V 50A
        BSM50GX120DN2

        Mfr.#: BSM50GX120DN2

        OMO.#: OMO-BSM50GX120DN2-1190

        		 Trans IGBT Module N-CH 1.2kV 50A nom 36-Pin (Alt: SP000100372)
        BSM50GD120DLCBOSA1

        Mfr.#: BSM50GD120DLCBOSA1

        OMO.#: OMO-BSM50GD120DLCBOSA1-INFINEON-TECHNOLOGIES

        		 Trans IGBT Module N-CH
        BSM50GP60GBOSA1

        Mfr.#: BSM50GP60GBOSA1

        OMO.#: OMO-BSM50GP60GBOSA1-INFINEON-TECHNOLOGIES

        		 IGBT 2 LOW POWER ECONO3-3
        BSM50GX120DN2BOSA1

        Mfr.#: BSM50GX120DN2BOSA1

        OMO.#: OMO-BSM50GX120DN2BOSA1-INFINEON-TECHNOLOGIES

        		 LOW POWER ECONO
        Disponibilidad
        Valores:
        Available
        En orden:
        2000
        Ingrese la cantidad:
        El precio actual de BSM50GB120DN2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        75,54 US$
        75,54 US$
        5
        74,15 US$
        370,75 US$
        10
        72,23 US$
        722,30 US$
        25
        70,81 US$
        1 770,25 US$
        100
        65,63 US$
        6 563,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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