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SISH625DN-T1-GE3

SISH625DN-T1-GE3
Mfr. #:
SISH625DN-T1-GE3
Fabricante:
Vishay
Descripción:
P-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10V m @ 7.5V 11 m @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISH625DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SISH625DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SISH6, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISH625DN-T1-GE3
DISTI # V72:2272_22759345		Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10Vm @ 7.5V 11 m @ 4.5V5444
  • 3000:$0.2128
  • 1000:$0.2554
  • 500:$0.3187
  • 250:$0.3527
  • 100:$0.3847
  • 25:$0.4546
  • 10:$0.5556
  • 1:$0.6608
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 30 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4148In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 30 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4148In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 30 V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.2128
  • 15000:$0.2184
  • 6000:$0.2268
  • 3000:$0.2436
SISH625DN-T1-GE3
DISTI # 32638894		Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10Vm @ 7.5V 11 m @ 4.5V6000
  • 6000:$0.2487
SISH625DN-T1-GE3
DISTI # 31085725		Vishay IntertechnologiesP-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10Vm @ 7.5V 11 m @ 4.5V5444
  • 3000:$0.2128
  • 1000:$0.2554
  • 500:$0.3187
  • 250:$0.3527
  • 100:$0.3847
  • 32:$0.4546
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SISH625DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.2049
  • 30000:$0.2099
  • 18000:$0.2159
  • 12000:$0.2249
  • 6000:$0.2319
SISH625DN-T1-GE3
DISTI # SISH625DN-T1-GE3		Vishay Intertechnologies(Alt: SISH625DN-T1-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.2679
  • 500:€0.2719
  • 100:€0.2769
  • 50:€0.2879
  • 25:€0.3109
  • 10:€0.3619
  • 1:€0.5309
SISH625DN-T1-GE3
DISTI # 81AC3498		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
  • 50000:$0.2070
  • 30000:$0.2160
  • 20000:$0.2320
  • 10000:$0.2480
  • 5000:$0.2690
  • 1:$0.2760
SISH625DN-T1-GE3
DISTI # 99AC9586		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes50
  • 1000:$0.2590
  • 500:$0.3230
  • 250:$0.3580
  • 100:$0.3920
  • 50:$0.4330
  • 25:$0.4750
  • 10:$0.5160
  • 1:$0.6460
SISH625DN-T1-GE3
DISTI # 78-SISH625DN-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds,20V Vgs PowerPAK 1212-8SH
RoHS: Compliant		5756
  • 1:$0.6300
  • 10:$0.5100
  • 100:$0.3870
  • 500:$0.3200
  • 1000:$0.2560
  • 3000:$0.2310
  • 6000:$0.2160
  • 9000:$0.2080
  • 24000:$0.2000
SISH625DN-T1-GE3
DISTI # 3019136		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W45
  • 500:£0.2320
  • 250:£0.2570
  • 100:£0.2810
  • 10:£0.4110
  • 1:£0.5310
SISH625DN-T1-GE3
DISTI # 3019136		Vishay IntertechnologiesMOSFET, P-CH, -30V, -35A, 150DEG C, 52W
RoHS: Compliant		45
  • 1000:$0.3620
  • 500:$0.4580
  • 250:$0.5100
  • 100:$0.5630
  • 25:$0.7570
  • 5:$0.8290
Imagen Parte # Descripción
SISH625DN-T1-GE3

Mfr.#: SISH625DN-T1-GE3

OMO.#: OMO-SISH625DN-T1-GE3

 MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH
SISH625DN-T1-GE3

Mfr.#: SISH625DN-T1-GE3

OMO.#: OMO-SISH625DN-T1-GE3-VISHAY

 P-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 7 m @ 10V m @ 7.5V 11 m @ 4.5V
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de SISH625DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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