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AS4C8M16D1A-5TINTR

AS4C8M16D1A-5TINTR
Mfr. #:
AS4C8M16D1A-5TINTR
Fabricante:
Alliance Memory
Descripción:
IC DRAM 128M PARALLEL 66TSOP II
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AS4C8M16D1A-5TINTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
AS4C8M16D1A-5TINTR más información
Atributo del producto
Valor de atributo
Fabricante
Alliance Memory, Inc.
categoria de producto
Memoria
Serie
-
Escribe
DDR1
embalaje
Embalaje alternativo de cinta y carrete (TR)
Estilo de montaje
SMD / SMT
Paquete-Estuche
TSOP-66
Temperatura de funcionamiento
-40°C ~ 85°C (TA)
Interfaz
Parallel
Suministro de voltaje
2.3 V ~ 2.7 V
Paquete de dispositivo de proveedor
66-TSOP II
Tamaño de la memoria
128M (8M x 16)
Tipo de memoria
DDR SDRAM
Velocidad
200MHz
Formato de memoria
RAM
Temperatura máxima de funcionamiento
+ 85 C
Temperatura mínima de funcionamiento
- 40 C
Organización
8 M x 16
Suministro-Voltaje-Máx.
2.7 V
Suministro-Voltaje-Mín.
2.3 V
Frecuencia de reloj máxima
200 MHz
Tags
AS4C8M16D1A-5T, AS4C8M16D1A, AS4C8M16D, AS4C8M1, AS4C8, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***metry Electronics
DDR1 128MB 200Mhz 400Mbps/pin 2.5V 8M x 16 66pin TSOP II
***et
DRAM Chip DDR1 SDRAM 128Mbit 8M X 16 66-Pin TSOP-II T/R
***i-Key
IC DRAM 128MBIT PAR 66TSOP II
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Parte # Mfg. Descripción Valores Precio
AS4C8M16D1A-5TINTR
DISTI # AS4C8M16D1A-5TINTR-ND		Alliance Memory IncIC DRAM 128M PARALLEL 66TSOP II
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.9845
  • 3000:$2.1344
  • 2000:$2.1565
  • 1000:$2.1932
AS4C8M16D1A-5TINTR
DISTI # AS4C8M16D1A-5TINTR		Alliance Memory IncDRAM Chip DDR1 SDRAM 128Mbit 8M X 16 66-Pin TSOP-II T/R - Tape and Reel (Alt: AS4C8M16D1A-5TINTR)
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.7900
  • 2000:$1.7900
  • 4000:$1.6900
  • 6000:$1.5900
  • 10000:$1.5900
AS4C8M16D1A-5TIN
DISTI # 913-4C8M16D1A-5TIN		Alliance Memory IncDRAM
RoHS: Compliant		1830
  • 1:$3.1400
  • 10:$2.8200
  • 25:$2.7700
  • 100:$2.4700
  • 250:$2.3900
  • 500:$2.3800
  • 1000:$2.2200
  • 2000:$2.0800
AS4C8M16D1A-5TINTR
DISTI # 913-4C8M16D1A-5TINTR		Alliance Memory IncDRAM
RoHS: Compliant		0
  • 1000:$2.3000
  • 2000:$2.1600
AS4C8M16D1A-5TINTRAlliance Memory IncDDR SDRAM 128M 8M x 16 2.5V 66pin TSOP II1000
    Imagen Parte # Descripción
    AS4C8M16D1A-5TCNTR

    Mfr.#: AS4C8M16D1A-5TCNTR

    OMO.#: OMO-AS4C8M16D1A-5TCNTR

    		 DRAM
    AS4C8M16D1-5BCNTR

    Mfr.#: AS4C8M16D1-5BCNTR

    OMO.#: OMO-AS4C8M16D1-5BCNTR

    		 DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
    AS4C8M16D1-5BIN

    Mfr.#: AS4C8M16D1-5BIN

    OMO.#: OMO-AS4C8M16D1-5BIN

    		 DRAM
    AS4C8M16D1-5BINTR

    Mfr.#: AS4C8M16D1-5BINTR

    OMO.#: OMO-AS4C8M16D1-5BINTR

    		 DRAM
    AS4C8M16D1-5TCN

    Mfr.#: AS4C8M16D1-5TCN

    OMO.#: OMO-AS4C8M16D1-5TCN

    		 DRAM 128Mb, 3.3V, 200Mhz 8M x 16 DDR
    AS4C8M16D1A-5BIN

    Mfr.#: AS4C8M16D1A-5BIN

    OMO.#: OMO-AS4C8M16D1A-5BIN-230

    		 DRAM 128M 2.5V 200Mhz 8M x 16 DDR1
    AS4C8M16D1A-5BCN

    Mfr.#: AS4C8M16D1A-5BCN

    OMO.#: OMO-AS4C8M16D1A-5BCN-230

    		 DRAM 128M 2.5V 200Mhz 8M x 16 DDR1
    AS4C8M16D1-5BIN

    Mfr.#: AS4C8M16D1-5BIN

    OMO.#: OMO-AS4C8M16D1-5BIN-ALLIANCE-MEMORY

    		 IC DRAM 128M PARALLEL 60TFBGA
    AS4C8M16D1-5BCNTR

    Mfr.#: AS4C8M16D1-5BCNTR

    OMO.#: OMO-AS4C8M16D1-5BCNTR-ALLIANCE-MEMORY

    		 DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
    AS4C8M16D1-5TCN

    Mfr.#: AS4C8M16D1-5TCN

    OMO.#: OMO-AS4C8M16D1-5TCN-ALLIANCE-MEMORY

    		 DRAM 128Mb, 3.3V, 200Mhz 8M x 16 DDR
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de AS4C8M16D1A-5TINTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,38 US$
    2,38 US$
    10
    2,27 US$
    22,66 US$
    100
    2,15 US$
    214,65 US$
    500
    2,03 US$
    1 013,65 US$
    1000
    1,91 US$
    1 908,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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