IPB120N04S4-02

Mfr. #:: IPB120N04S4-02
Fabricante:: Infineon Technologies
Descripción:: RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPB120N04S4-02 Ficha de datos
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Más información:: IPB120N04S4-02 más información

Atributo del producto
Valor de atributo

Fabricante: INF

categoria de producto: FET - Single

Serie: OptiMOS-T2

embalaje: Carrete

Alias de parte: IPB120N04S402ATMA1 IPB120N04S402XT SP000764726

Unidad de peso: 0.139332 oz

Estilo de montaje: SMD / SMT

Nombre comercial: OptiMOS

Paquete-Estuche: TO-252-3

Tecnología: Si

Número de canales: 1 Channel

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 158 W

Temperatura máxima de funcionamiento: + 175 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 30 ns

Hora de levantarse: 16 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 120 A

Vds-Drain-Source-Breakdown-Voltage: 40 V

Resistencia a la fuente de desagüe de Rds: 1.8 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 30 ns

Tiempo de retardo de encendido típico: 27 ns

Qg-Gate-Charge: 103 nC

Tags: IPB120N04S4-02, IPB120N04S4-0, IPB120N04S4, IPB120N04, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
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Step2:
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Step3:
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IPB120N04S4-02 Más información

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

20V to 40V N-Channel Automotive MOSFETs: Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPB120N04S402ATMA1 DISTI # V72:2272_06383236	Infineon Technologies AG	Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	932	500:$1.1862 250:$1.2785 100:$1.3235 25:$1.5830 10:$1.5884 1:$1.8074
IPB120N04S402ATMA1 DISTI # IPB120N04S402ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 120A TO263-3-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2441In Stock	500:$1.4561 100:$1.8722 10:$2.3300 1:$2.5800
IPB120N04S402ATMA1 DISTI # IPB120N04S402ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 120A TO263-3-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2441In Stock	500:$1.4561 100:$1.8722 10:$2.3300 1:$2.5800
IPB120N04S402ATMA1 DISTI # IPB120N04S402ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 120A TO263-3-2 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	1000:$1.1714
IPB120N04S402ATMA1 DISTI # 31084166	Infineon Technologies AG	Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	932	500:$1.1862 250:$1.2785 100:$1.3235 25:$1.5830 10:$1.5884 7:$1.8074
IPB120N04S402ATMA1 DISTI # IPB120N04S402ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB120N04S402ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.0579 2000:$1.0199 4000:$0.9829 6000:$0.9499 10000:$0.9329
IPB120N04S402ATMA1 DISTI # SP000764726	Infineon Technologies AG	Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000764726) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.1149 2000:€0.9289 4000:€0.8569 6000:€0.7959 10000:€0.7429
IPB120N04S402ATMA1 DISTI # 12AC9702	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 40V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00188ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	1:$2.5800 10:$2.3300 25:$2.1800 50:$2.0200 100:$1.8700 250:$1.6600 500:$1.4600
IPB120N04S402ATMA1 DISTI # 726-IPB120N04S402ATM	Infineon Technologies AG	MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 RoHS: Compliant	10250	1:$2.1700 10:$1.8400 100:$1.4700 500:$1.2900 1000:$1.0700 2000:$0.9920 5000:$0.9550
IPB120N04S4-02 DISTI # 726-IPB120N04S4-02	Infineon Technologies AG	MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 RoHS: Compliant	616	1:$2.1600 10:$1.8300 100:$1.4600 500:$1.2800 1000:$1.0600
IPB120N04S402ATMA1	Infineon Technologies AG	Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS Power Mosfet - PG-TO263-3 RoHS: Not Compliant	110Cut Tape/Mini-Reel	1:$1.4700 50:$1.2700 100:$1.2400 250:$1.1900 500:$1.1300
IPB120N04S402ATMA1 DISTI # 2709995	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 40V, TO-263 RoHS: Compliant	4975	1:$3.2300 10:$2.8100 100:$2.2900 500:$1.9400
IPB120N04S402ATMA1 DISTI # XSFP00000140098	Infineon Technologies AG	RoHS: Compliant	74	69:$1.9600 74:$1.8400
IPB120N04S402ATMA1 DISTI # 2709995	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 40V, TO-263 RoHS: Compliant	4975	5:£1.8900 25:£1.7800 100:£1.4300 250:£1.2700 500:£1.1100
IPB120N04S402ATMA1 DISTI # C1S322000638060	Infineon Technologies AG	MOSFETs RoHS: Compliant	932	250:$1.2772 100:$1.3228 25:$1.5819 10:$1.5876

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	Mfr.#: IPB120N06S4H1ATMA2 OMO.#: OMO-IPB120N06S4H1ATMA2	MOSFET N-Ch 60V 120A D2PAK-2
	Mfr.#: IPB120N06S403ATMA2 OMO.#: OMO-IPB120N06S403ATMA2	MOSFET N-Ch 60V 120A D2PAK-2
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	Mfr.#: IPB120N06S4-03 OMO.#: OMO-IPB120N06S4-03-317	RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2

Disponibilidad

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En orden:: 2500
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El precio actual de IPB120N04S4-02 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,35 US$~~; ~~1,35 US$~~

10: ~~1,28 US$~~; ~~12,82 US$~~

100: ~~1,22 US$~~; ~~121,50 US$~~

500: ~~1,15 US$~~; ~~573,75 US$~~

1000: ~~1,08 US$~~; ~~1 080,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPB120N04S4-02

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes