SI4920DY-T1-GE3

SI4920DY-T1-GE3
Mfr. #:
SI4920DY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2N-CH 30V 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4920DY-T1-GE3 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
SI4920DY-T1-GE3 DatasheetSI4920DY-T1-GE3 Datasheet (P4-P6)SI4920DY-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Tape & Reel (TR)
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
8-SO
Tipo FET
2 N-Channel (Dual)
Potencia máxima
2W
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
-
Rds-On-Max-Id-Vgs
25 mOhm @ 6.9A, 10V
Vgs-th-Max-Id
1V @ 250μA (Min)
Puerta-Carga-Qg-Vgs
23nC @ 5V
Tags
SI4920DY-T, SI4920D, SI4920, SI492, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 6.9A 8-Pin SOIC N T/R
***nell
DUAL N CHANNEL MOSFET, 30V, 6.9A, FULL R
***ment14 APAC
DUAL N CHANNEL MOSFET, 30V, 6.9A; Transi; DUAL N CHANNEL MOSFET, 30V, 6.9A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:6.9A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.02ohm; Rds(on) Test Voltage Vgs:10V
Parte # Mfg. Descripción Valores Precio
SI4920DY-T1-GE3
DISTI # SI4920DY-T1-GE3-ND
Vishay SiliconixMOSFET 2N-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4920DY-T1-GE3
    DISTI # 781-SI4920DY-GE3
    Vishay IntertechnologiesMOSFET 30V 6.9A 2.0W 25mohm @ 10V
    RoHS: Compliant
    0
      Imagen Parte # Descripción
      SI4920DY-T1-E3

      Mfr.#: SI4920DY-T1-E3

      OMO.#: OMO-SI4920DY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4920DY

      Mfr.#: SI4920DY

      OMO.#: OMO-SI4920DY-1190

      MOSFET SO8 DUAL NCH
      SI4920DY-E3

      Mfr.#: SI4920DY-E3

      OMO.#: OMO-SI4920DY-E3-1190

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4920DY-GE1

      Mfr.#: SI4920DY-GE1

      OMO.#: OMO-SI4920DY-GE1-1190

      Nuevo y original
      SI4920DY-NL

      Mfr.#: SI4920DY-NL

      OMO.#: OMO-SI4920DY-NL-1190

      Nuevo y original
      SI4920DY-T1

      Mfr.#: SI4920DY-T1

      OMO.#: OMO-SI4920DY-T1-1190

      MOSFET 30V 6.9A 2W
      SI4920DY-T1-E3

      Mfr.#: SI4920DY-T1-E3

      OMO.#: OMO-SI4920DY-T1-E3-VISHAY

      MOSFET 2N-CH 30V 8-SOIC
      SI4920DY-T1-GE3

      Mfr.#: SI4920DY-T1-GE3

      OMO.#: OMO-SI4920DY-T1-GE3-VISHAY

      MOSFET 2N-CH 30V 8-SOIC
      SI4920DYT1

      Mfr.#: SI4920DYT1

      OMO.#: OMO-SI4920DYT1-1190

      Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de SI4920DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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