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AOT7N60

AOT7N60
Mfr. #:
AOT7N60
Fabricante:
Alpha & Omega Semiconductor Inc
Descripción:
MOSFET N-CH 600V 7A TO-220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AOT7N60 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOT7N60 Datasheet
ECAD Model:
Atributo del producto
Valor de atributo
Tags
AOT7N6, AOT7N, AOT7, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220
***el Electronic
IC OPAMP JFET 3MHZ 8DIP
*** Stop Electro
Power Field-Effect Transistor
***eco
Transistor MOSFET N Channel 600 Volt 6 Amp 3-Pin 3+ Tab TO-220 Tube
***icroelectronics
N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
***id Electronics
Transistor MOSFET N-Ch. 6A/600V TO220 STP6NK60Z
***ark
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:110W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, UniFETTM II, 500 V, 8 A, 850 mΩ, TO-220
***et Europe
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 Rail
*** Stop Electro
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***icroelectronics
N-Channel 700V - 1Ohm - 7.5A - TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
***ical
Trans MOSFET N-CH 700V 7.5A 3-Pin(3+Tab) TO-220AB Tube
***ponent Stockers USA
7.5 A 700 V 1.2 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 700V, 7.5A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 1; Available until stocks are exhausted
***ark
MOSFET, N CHANNEL, 700V, 7.5A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***itex
Transistor: N-MOSFET; unipolar; 650V; 4.5A; 0.95ohm; 50W; -55+150 deg.C; THT; TO220
***ure Electronics
Single N-Channel 650 V 950 mOhm 19 nC CoolMOS™ Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-220 Tube
***el Electronic
MOSFET Transistor, N Channel, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V
***ment14 APAC
MOSFET, N, COOLMOS, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Source Voltage Vds:650V; On Resistance
***ark
MOSFET, N, COOLMOS, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:4.5A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***nell
MOSFET, N, COOLMOS, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 50W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 4.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 50W; Pulse Current Idm: 13.5A; SMD Marking: 04N60C3; Termination Type: Through Hole; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3.9V
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, TO-220
***itex
Transistor: N-MOSFET; unipolar; 600V; 3.9A; 1.2ohm; 50W; -55+150 deg.C; THT; TO220
***ure Electronics
N-Channel 600 V 1.2 Ohm Flange Mount SuperFET Mosfet - TO-220
***Yang
Trans MOSFET N-CH 600V 3.9A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 3.9A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.9A; Package / Case:TO-220; Power Dissipation Pd:50mW; Pulse Current Idm:11.7A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in TO-220 package
***ure Electronics
STP6N60M2 Series 650 V 1.2 Ohm 4.5 A N-Channel MDmesh™ M2 Power Mosfet-TO-220
***ical
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET N-Ch 600V 4.5A MDmesh II TO-220
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 600V, 4.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
AOT7N60
DISTI # V36:1790_07841398		Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220
RoHS: Compliant		0
  • 1000000:$0.3563
  • 500000:$0.3566
  • 100000:$0.3838
  • 10000:$0.4328
  • 1000:$0.4410
AOT7N60
DISTI # 785-1189-5-ND		Alpha & Omega SemiconductorMOSFET N-CH 600V 7A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$0.4410
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Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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