APT5010B2LLG

Mfr. #:: APT5010B2LLG
Fabricante:: Microchip / Microsemi
Descripción:: Discrete Semiconductor Modules Power MOSFET - MOS7
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: APT5010B2LLG Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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Atributo del producto
Valor de atributo

Fabricante:: Pastilla

Categoria de producto:: Módulos de semiconductores discretos

RoHS:: Y

Embalaje:: Tubo

Marca:: Microchip / Microsemi

Tipo de producto:: Módulos de semiconductores discretos

Cantidad de paquete de fábrica:: 1

Subcategoría:: Módulos de semiconductores discretos

Tags: APT5010B2, APT5010B, APT5010, APT501, APT50, APT5, APT

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT5010B2LLG Descripción

***ark: MOSFET MOS7 500 V 10 OHM TO-247 MAX 3 T-MAX TUBE ROHS COMPLIANT: YES

***ical: Trans MOSFET N-CH 500V 46A 3-Pin(3+Tab) T-MAX

*** Stop Electro: Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ure Electronics: Single N-Channel 500 V 0.078 Ohms Through Hole Power Mosfet - SUPER-247

***ical: Trans MOSFET N-CH 500V 47A 3-Pin Super-247

***ark: Mosfet N-Channel 500V Rohs Compliant: No

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 47A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N, 500V, 43A, SUPER 247; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:500V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Super-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:47A; Junction to Case Thermal Resistance A:0.28°C/W; Package / Case:Super-247; Power Dissipation Pd:540W; Power Dissipation Pd:450W; Pulse Current Idm:190A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 500 V 0.087 Ohms Through Hole Power Mosfet - SUPER-247

***eco: 500V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A HEXDIP PA

*** Stop Electro: Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA

***nell: MOSFET,N CH,W DIODE,500V,46A,SUP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 540W; Transistor Case Style: TO-274AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 30V

***o-Tech: MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 0.2Ohm; ID 23A; TO-247AC; PD 280W; VGS +/-20V

***ure Electronics: Single N-Channel 500 V 0.13 Ohms Through Hole Power Mosfet - SUPER-247

***ark: N Channel Mosfet, 500V, 36A, Super-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:36A; On Resistance Rds(On):0.13Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

***nell: MOSFET, N, SUPER 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 446W; Transistor Case Style: TO-274AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 36A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 144A; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

***emi: N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247

***el Electronic: N-Channel UniFETTM FRFET® MOSFET 500V, 45A, 120mΩ, TO-247 3L, 3600-RAIL

*** Stop Electro: Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 54 A, 77 mΩ, TO-247

*** Stop Electro: Power Field-Effect Transistor, 54A I(D), 650V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***el Electronic: Aluminum Electrolytic Capacitors 220μF Radial, Can - SMD ±20% Tape & Reel (TR) HB 0.228 5.80mm Surface Mount Automotive 82mA Cap Aluminum Lytic 220uF 4V 20% (6.3 X 5.8mm) SMD 82mA 2000h 105C T/R

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 52 A, 72 mΩ, TO-247

***r Electronics: Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***el Electronic: Aluminum Electrolytic Capacitors 470μF Radial, Can - SMD ±20% Tape & Reel (TR) HA 0.402 10.20mm Surface Mount Automotive 360mA CAP ALUM 470UF 20% 25V SMD

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
APT5010B2LLG DISTI # V36:1790_09096581	Microsemi Corporation	Trans MOSFET N-CH 500V 46A 3-Pin(3+Tab) T-MAX RoHS: Compliant	0	15000:$10.9800 3000:$12.1400 300:$14.7300 30:$15.1900
APT5010B2LLG DISTI # APT5010B2LLG-ND	Microsemi Corporation	MOSFET N-CH 500V 46A T-MAX RoHS: Compliant Min Qty: 32 Container: Tube	Temporarily Out of Stock	32:$15.1903
APT5010B2LLG DISTI # APT5010B2LLG	Microchip Technology Inc	Power MOS 7 MOSFET N-Channel 500V 46A 3-Pin TO-247 - Rail/Tube (Alt: APT5010B2LLG) RoHS: Compliant Min Qty: 32 Container: Tube	Americas - 0	320:$10.1900 160:$10.2900 96:$10.6900 64:$10.9900 32:$11.3900
APT5010B2LLG DISTI # 494-APT5010B2LLG	Microchip Technology Inc	Discrete Semiconductor Modules Power MOSFET - MOS7 RoHS: Compliant	4	1:$17.7100 10:$16.1000 25:$14.8900 50:$14.0800 100:$13.5900 250:$12.4000 500:$11.6100

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: APT5010JVFR OMO.#: OMO-APT5010JVFR	MOSFET FG, FREDFET, 500V, 0.10_OHM, SOT-227
	Mfr.#: APT5010JVFR OMO.#: OMO-APT5010JVFR-1190	POWER FREDFET TRANSISTOR
	Mfr.#: APT5010B2FLL OMO.#: OMO-APT5010B2FLL-1190	Nuevo y original
	Mfr.#: APT5010B2FLLX OMO.#: OMO-APT5010B2FLLX-1190	Nuevo y original
	Mfr.#: APT5010JN OMO.#: OMO-APT5010JN-1190	Power MOS IV MOSFET N-Channel 500V 48A SOT-227 - Rail/Tube (Alt: APT5010JN)
	Mfr.#: APT5010LFLL OMO.#: OMO-APT5010LFLL-1190	Nuevo y original
	Mfr.#: APT5010LYRG OMO.#: OMO-APT5010LYRG-1190	Nuevo y original
	Mfr.#: APT5010VL OMO.#: OMO-APT5010VL-1190	Nuevo y original
	Mfr.#: APT5011JNF OMO.#: OMO-APT5011JNF-1190	Nuevo y original
	Mfr.#: APT5015BVFRG OMO.#: OMO-APT5015BVFRG-1190	Trans MOSFET N-CH 500V 32A 3-Pin(3+Tab) TO-247

Disponibilidad

Valores:: Available
En orden:: 1987
Ingrese la cantidad:

El precio actual de APT5010B2LLG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~17,71 US$~~; ~~17,71 US$~~

10: ~~16,10 US$~~; ~~161,00 US$~~

25: ~~14,89 US$~~; ~~372,25 US$~~

50: ~~14,08 US$~~; ~~704,00 US$~~

100: ~~13,59 US$~~; ~~1 359,00 US$~~

250: ~~12,40 US$~~; ~~3 100,00 US$~~

500: ~~11,61 US$~~; ~~5 805,00 US$~~

1000: ~~10,36 US$~~; ~~10 360,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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APT5010B2 7
APT5010B 8
APT5010 30
APT501 64
APT50 176
APT5 209
APT 2789

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APT5010B2LLG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes