RQ3E130BNTB

RQ3E130BNTB
Mfr. #:
RQ3E130BNTB
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET 4.5V Drive Nch MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RQ3E130BNTB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RQ3E130BNTB más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSMT-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
13 A
Rds On - Resistencia de la fuente de drenaje:
4.4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
36 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
34 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
64 ns
Tiempo típico de retardo de encendido:
14 ns
Parte # Alias:
RQ3E130BN
Tags
RQ3E130B, RQ3E13, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V ±13A 8-Pin HSMT Embossed Tape and Reel
***nell
MOSFET, N-CH, 30V, 39A, 150DEG C, 16W; Transistor Polarity: N Channel; Continuous Drain Current Id: 39A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 16W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Electronics
MOSFET N-CH 30V 13A HSMT8
***i-Key
MOSFET N-CH 30V 13A 8HSMT
***et
Trans MOSFET N-CH 30V 16A 8-Pin Power 33 T/R
***el Electronic
RENESAS - ICL7660AIBAZA-T - Régulateur de tension pompe de charge DC/DC réglable, 1,5V à 12V, -12V à -1,5V/45mA, NSOIC-8
***rchild Semiconductor
This device has been designed specifically to improve theefficiency of DC/DC converters. Using new techniques inMOSFET construction, the various components of gate chargeand capacitance have been optimized to reduce switchinglosses. Low gate resistance and very low Miller charge enableexcellent performance with both adaptive and fixed dead timegate drive circuits. Very low rDS(on) has been maintained toprovide an extremely versatile device.
***ure Electronics
Single N-Channel 30 V 5 mOhm 26 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***(Formerly Allied Electronics)
Fairchild FDS8896 N-channel MOSFET Transistor; 15 A; 30 V; 8-Pin SOIC
***emi
N-Channel PowerTrench® MOSFET 30V, 15A, 6.0mΩ
***ure Electronics
N-Channel 30 V 6 mOhm SMT PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
N-Channel 30 V 7 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ
***ment14 APAC
N CHANNEL MOSFET, 30V, 15A, SOIC; Transi; N CHANNEL MOSFET, 30V, 15A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 34 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:40A; Power Dissipation Pd:48W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
N-Channel 30 V 80 A 5 mO 34 nC SMT OptiMOS Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Parte # Mfg. Descripción Valores Precio
RQ3E130BNTB
DISTI # 30597548
ROHM SemiconductorTrans MOSFET N-CH 30V 13A 8-Pin HSMT T/R
RoHS: Compliant
3020
  • 34:$0.7575
RQ3E130BNTB
DISTI # RQ3E130BNTBCT-ND
ROHM SemiconductorMOSFET N-CH 30V 13A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2482In Stock
  • 1000:$0.1558
  • 500:$0.2017
  • 100:$0.2567
  • 10:$0.3440
  • 1:$0.4000
RQ3E130BNTB
DISTI # RQ3E130BNTBDKR-ND
ROHM SemiconductorMOSFET N-CH 30V 13A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2482In Stock
  • 1000:$0.1558
  • 500:$0.2017
  • 100:$0.2567
  • 10:$0.3440
  • 1:$0.4000
RQ3E130BNTB
DISTI # RQ3E130BNTBTR-ND
ROHM SemiconductorMOSFET N-CH 30V 13A HSMT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 30000:$0.1184
  • 15000:$0.1290
  • 6000:$0.1379
  • 3000:$0.1469
RQ3E130BNTB
DISTI # C1S625901169810
ROHM SemiconductorTrans MOSFET N-CH 30V 13A 8-Pin HSMT T/R
RoHS: Compliant
3020
  • 3000:$0.2720
  • 1000:$0.2900
  • 500:$0.3130
  • 100:$0.3870
  • 50:$0.4230
  • 10:$0.6060
RQ3E130BNTB
DISTI # RQ3E130BNTB
ROHM SemiconductorTrans MOSFET N-CH 30V ±13A 8-Pin HSMT Embossed Tape and Reel (Alt: RQ3E130BNTB)
RoHS: Compliant
Min Qty: 1
Container: Reel
Europe - 0
  • 1000:€0.1359
  • 500:€0.1459
  • 100:€0.1579
  • 50:€0.1729
  • 25:€0.2109
  • 10:€0.2719
  • 1:€0.3809
RQ3E130BNTB
DISTI # RQ3E130BNTB
ROHM SemiconductorTrans MOSFET N-CH 30V ±13A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E130BNTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1139
  • 18000:$0.1169
  • 12000:$0.1239
  • 6000:$0.1319
  • 3000:$0.1399
RQ3E130BNTB
DISTI # 82AC3043
ROHM SemiconductorMOSFET, N-CH, 30V, 39A, 150DEG C, 16W,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes1980
  • 1000:$0.1630
  • 500:$0.1800
  • 250:$0.1980
  • 100:$0.2160
  • 50:$0.2770
  • 25:$0.3380
  • 10:$0.3990
  • 1:$0.5250
RQ3E130BNTB
DISTI # 755-RQ3E130BNTB
ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
RoHS: Compliant
2123
  • 1:$0.5200
  • 10:$0.3950
  • 100:$0.2140
  • 1000:$0.1610
  • 3000:$0.1380
  • 9000:$0.1300
  • 24000:$0.1190
  • 45000:$0.1140
RQ3E130BNTBROHM Semiconductor 80
  • 72:$0.7000
  • 19:$0.8400
  • 1:$1.4000
RQ3E130BNTBROHM Semiconductor 100
  • 1:¥5.7960
  • 100:¥3.2863
  • 1500:¥2.0835
  • 3000:¥1.5522
RQ3E130BNTBROHM SemiconductorRoHS(ship within 1day)100
  • 1:$1.0800
  • 10:$0.6300
  • 50:$0.3900
  • 100:$0.3400
  • 500:$0.2900
  • 1000:$0.2800
RQ3E130BNTB
DISTI # 2965340
ROHM SemiconductorMOSFET, N-CH, 30V, 39A, 150DEG C, 16W1980
  • 500:£0.1470
  • 250:£0.1530
  • 100:£0.1570
  • 25:£0.2740
  • 5:£0.2870
RQ3E130BNTB
DISTI # 2965340
ROHM SemiconductorMOSFET, N-CH, 30V, 39A, 150DEG C, 16W
RoHS: Compliant
1980
  • 500:$0.2400
  • 250:$0.2520
  • 100:$0.2760
  • 25:$0.5460
  • 5:$0.5770
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OPA197IDBVR

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Precision Amplifiers 36-V, Precision, Rail-to-Rail Input Output, Low Offset Voltage Op Amp 5-SOT-23 -40 to 125
M20-8760546

Mfr.#: M20-8760546

OMO.#: OMO-M20-8760546

Headers & Wire Housings 05+05 DIL VERTICAL SMT HEADER TIN
4928

Mfr.#: 4928

OMO.#: OMO-4928

Terminals S/M MALE .240" 20A QUICK FIT TERMINAL
ATA6561-GAQW-N

Mfr.#: ATA6561-GAQW-N

OMO.#: OMO-ATA6561-GAQW-N-MICROCHIP-TECHNOLOGY

INDUSTRIAL GRADE CAN TRX WITH VI
OPA197IDBVR

Mfr.#: OPA197IDBVR

OMO.#: OMO-OPA197IDBVR-TEXAS-INSTRUMENTS

Precision Amplifiers 36-V, Precision, Rail-to-Rail Input Output, Low Offset Voltage Op Amp 5-SOT-23 -40 to 125
OPA2197IDGKR

Mfr.#: OPA2197IDGKR

OMO.#: OMO-OPA2197IDGKR-TEXAS-INSTRUMENTS

IC OP AMP GP RR 10MHZ 8-VSSOP
009296002553906

Mfr.#: 009296002553906

OMO.#: OMO-009296002553906-AVX

Headers & Wire Housings 2WAY POKE HOME VERTICAL TOP MOUNT
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de RQ3E130BNTB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,52 US$
0,52 US$
10
0,40 US$
3,95 US$
100
0,21 US$
21,40 US$
1000
0,16 US$
161,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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