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FP35R12W2T4BOMA1

FP35R12W2T4BOMA1
Mfr. #:
FP35R12W2T4BOMA1
Fabricante:
Infineon Technologies
Descripción:
Trans IGBT Module N-CH 1200V 54A 215000mW Tray
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FP35R12W2T4BOMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FP35R12W2, FP35R12W, FP35R, FP35, FP3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin EASY2B-1 Tray
***ment14 APAC
IGBT, LOW POWER, 1200V, 35A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:215W
***ineon
EasyPIM 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon
Parte # Mfg. Descripción Valores Precio
FP35R12W2T4BOMA1
DISTI # V99:2348_17558162		Infineon Technologies AGTrans IGBT Module N-CH 1200V 54A 215000mW Tray
RoHS: Compliant		15
  • 1:$50.7100
FP35R12W2T4BOMA1
DISTI # FP35R12W2T4BOMA1-ND		Infineon Technologies AGIGBT MODULE VCES 1200V 35A
RoHS: Not compliant
Min Qty: 15
Container: Bulk		Temporarily Out of Stock
  • 15:$49.8393
FP35R12W2T4BOMA1
DISTI # 32445726		Infineon Technologies AGTrans IGBT Module N-CH 1200V 54A 215000mW Tray
RoHS: Compliant		15
  • 1:$50.7100
FP35R12W2T4BOMA1
DISTI # FP35R12W2T4BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: FP35R12W2T4BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray		Americas - 0
  • 150:$35.8900
  • 90:$36.7900
  • 60:$37.6900
  • 30:$38.6900
  • 15:$39.1900
FP35R12W2T4BOMA1
DISTI # 13AC8733		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 54A,Transistor Polarity:N Channel,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:215W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes44
  • 1:$51.3400
FP35R12W2T4
DISTI # 641-FP35R12W2T4		Infineon Technologies AGIGBT Modules IGBT-MODULE
RoHS: Not compliant		0
  • 1:$53.4100
  • 5:$52.2300
  • 10:$49.8400
  • 25:$47.7500
FP35R12W2T4BOMA1
DISTI # 1116098		Infineon Technologies AGIGBT MODULE EASYPIM IGBT4 1200V 35A, EA109
  • 25:£32.6500
  • 10:£33.4900
  • 5:£34.3700
  • 1:£35.9400
FP35R12W2T4BOMA1
DISTI # FP35R12W2T4		Infineon Technologies AGConverter-Brake-Inverter 1200V 54A EASY2
RoHS: Compliant		15
  • 1:€43.7500
  • 3:€37.7500
  • 10:€34.7500
  • 20:€33.4500
FP35R12W2T4BOMA1
DISTI # 2726163		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 54A
RoHS: Compliant		44
  • 5:$65.0900
  • 2:$68.7700
  • 1:$70.0900
FP35R12W2T4BOMA1
DISTI # 2726163		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 54A44
  • 50:£34.6600
  • 10:£35.4000
  • 5:£36.1300
  • 1:£36.8700
Imagen Parte # Descripción
FP35R12W2T4PB11BPSA1

Mfr.#: FP35R12W2T4PB11BPSA1

OMO.#: OMO-FP35R12W2T4PB11BPSA1

 IGBT Modules BOND MODULE
FP35R12W2T4_B11

Mfr.#: FP35R12W2T4_B11

OMO.#: OMO-FP35R12W2T4-B11

 IGBT Modules IGBT 1200V 35A
FP35R12W2T4PBPSA1

Mfr.#: FP35R12W2T4PBPSA1

OMO.#: OMO-FP35R12W2T4PBPSA1

 IGBT Modules BOND MODULE
FP35R12W2T4-B11

Mfr.#: FP35R12W2T4-B11

OMO.#: OMO-FP35R12W2T4-B11-1190

 Nuevo y original
FP35R12W2T4B11BOMA1

Mfr.#: FP35R12W2T4B11BOMA1

OMO.#: OMO-FP35R12W2T4B11BOMA1-INFINEON-TECHNOLOGIES

 IGBT MODULE 1200V 35A
FP35R12W2T4PB11BPSA1

Mfr.#: FP35R12W2T4PB11BPSA1

OMO.#: OMO-FP35R12W2T4PB11BPSA1-INFINEON-TECHNOLOGIES

 MOD IGBT LOW PWR EASY2B-2
FP35R12W2T4PBPSA1

Mfr.#: FP35R12W2T4PBPSA1

OMO.#: OMO-FP35R12W2T4PBPSA1-INFINEON-TECHNOLOGIES

 MOD IGBT LOW PWR EASY2B-1
FP35R12W2T4_B11

Mfr.#: FP35R12W2T4_B11

OMO.#: OMO-FP35R12W2T4-B11-125

 IGBT Modules IGBT 1200V 35A
FP35R12W2T4

Mfr.#: FP35R12W2T4

OMO.#: OMO-FP35R12W2T4-125

 IGBT Modules IGBT-MODULE
FP35R12W2T4BOMA1

Mfr.#: FP35R12W2T4BOMA1

OMO.#: OMO-FP35R12W2T4BOMA1-INFINEON-TECHNOLOGIES

 Trans IGBT Module N-CH 1200V 54A 215000mW Tray
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de FP35R12W2T4BOMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
54,03 US$
54,03 US$
10
51,33 US$
513,32 US$
100
48,63 US$
4 863,07 US$
500
45,93 US$
22 964,50 US$
1000
43,23 US$
43 227,30 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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