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IKW08T120FKSA1

IKW08T120FKSA1
Mfr. #:
IKW08T120FKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors LOW LOSS DuoPack 1200V 8A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKW08T120FKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.7 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
16 A
Pd - Disipación de energía:
70 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
TRENCHSTOP IGBT
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKW08T120 IKW8T12XK SP000013885
Unidad de peso:
0.172842 oz
Tags
IKW08, IKW0, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247
***ment14 APAC
IGBT, N, 1200V, 8A, TO-247; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:8A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:70W; Power Dissipation Pd:70W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon SCT
The 1200 V, 8 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.7 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 70 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***et
Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247
***ark
Igbt, Single, 1.2Kv, 16A, To-247; Dc Collector Current:16A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:70W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon SCT
The 1200 V, 8 A single TRENCHSTOP™ IGBT3 in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 16 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.2 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 70 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***ical
Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247
***i-Key
IGBT, 16.5A, 1200V, N-CHANNEL
*** Electronic Components
IGBT 1200V 16.5A 125W TO247
***el Nordic
Contact for details
***ment14 APAC
IGBT, NPT, 1200V, 16.5A, 125W, TO247; Transistor Type:IGBT; DC Collector Current:16.5A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Pulsed Current Icm:27A; Rise Time:31ns
***ource
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode43A, 1200V,,NPTN£¨
*** Source Electronics
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
***ure Electronics
HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***rchild Semiconductor
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
***nell
IGBT, 1200V, 21A; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati
***rchild Semiconductor
HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W
***rchild Semiconductor
HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***omponent
Trans IGBT Chip N-CH 1.2KV 20A 3-Pin TO-247 Tube (Alt: SP001150026)
***nell
IGBT, SINGLE, 1.2KV, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 288W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pi
***ineon SCT
The 5th generation of reverse conducting 1200 V, 20 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications, PG-TO247-3, RoHS
***ineon
The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies
Parte # Mfg. Descripción Valores Precio
IKW08T120FKSA1
DISTI # V36:1790_06378431		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$1.7990
  • 120000:$1.8000
  • 24000:$1.8600
  • 2400:$1.9470
  • 240:$1.9600
IKW08T120FKSA1
DISTI # IKW08T120FKSA1-ND		Infineon Technologies AGIGBT 1200V 16A 70W TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		3In Stock
  • 2640:$2.1616
  • 720:$2.6912
  • 240:$3.1613
  • 25:$3.6476
  • 10:$3.8580
  • 1:$4.3000
IKW08T120XK
DISTI # IKW08T120FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IKW08T120FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 960:$1.4900
  • 1440:$1.4900
  • 2400:$1.4900
  • 480:$1.5900
  • 240:$1.6900
IKW08T120FKSA1
DISTI # 61M6730		Infineon Technologies AGIGBT, N, 1200V, 8A, TO-247,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:70W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes315
  • 500:$2.5900
  • 250:$2.8800
  • 100:$3.0400
  • 50:$3.1900
  • 25:$3.3500
  • 10:$3.5000
  • 1:$4.1200
IKW08T120
DISTI # 726-IKW08T120		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 8A
RoHS: Compliant		330
  • 1:$4.0800
  • 10:$3.4700
  • 100:$3.0100
  • 250:$2.8500
  • 500:$2.5600
IKW08T120FKSA1
DISTI # 726-IKW08T120FKSA1		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 8A
RoHS: Compliant		350
  • 1:$4.0800
  • 10:$3.4700
  • 100:$3.0100
  • 250:$2.8500
  • 500:$2.5600
IKW08T120FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
RoHS: Compliant		34
  • 1000:$1.4000
  • 500:$1.4700
  • 100:$1.5300
  • 25:$1.5900
  • 1:$1.7200
IKW08T120FKSA1
DISTI # 8922129		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 16A TO247, PK28
  • 500:£1.4550
  • 200:£1.4850
  • 100:£1.5150
  • 20:£1.7380
  • 4:£2.2780
IKW08T120FKSA1
DISTI # 8922129P		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1.2KV 16A TO247, TU160
  • 500:£1.4550
  • 200:£1.4850
  • 100:£1.5150
  • 20:£1.7380
IKW08T120FKSA1
DISTI # 1471744		Infineon Technologies AGIGBT, N, 1200V, 8A, TO-247
RoHS: Compliant		315
  • 500:$3.8600
  • 250:$4.2900
  • 100:$4.5400
  • 10:$5.2300
  • 1:$6.1500
IKW08T120FKSA1
DISTI # 1471744		Infineon Technologies AGIGBT, N, 1200V, 8A, TO-247585
  • 500:£1.8800
  • 250:£2.0900
  • 100:£2.2000
  • 10:£2.5500
  • 1:£3.5100
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Disponibilidad
Valores:
350
En orden:
2333
Ingrese la cantidad:
El precio actual de IKW08T120FKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,08 US$
4,08 US$
10
3,47 US$
34,70 US$
100
3,01 US$
301,00 US$
250
2,85 US$
712,50 US$
500
2,56 US$
1 280,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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