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SI4925DDY-T1-GE3

SI4925DDY-T1-GE3
Mfr. #:
SI4925DDY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2P-CH 30V 8A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4925DDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SI4925DDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI4925DDY-GE3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Dual Dual Drain
Tipo FET
2 P-Channel (Dual)
Potencia máxima
5W
Tipo transistor
2 P-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
1350pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
8A
Rds-On-Max-Id-Vgs
29 mOhm @ 7.3A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
50nC @ 10V
Disipación de potencia Pd
2.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns 16 ns
Hora de levantarse
8 ns 35 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
7.3 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Resistencia a la fuente de desagüe de Rds
29 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
45 ns 40 ns
Tiempo de retardo de encendido típico
10 ns 42 ns
Qg-Gate-Charge
32 nC
Modo de canal
Mejora
Tags
SI4925DDY-T, SI4925DD, SI4925D, SI4925, SI492, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI4925DDY-T1-GE3 Dual P-channel MOSFET Transistor; 8 A; 30 V; 8-Pin SOIC
***ure Electronics
DUAL P-CH MOSFET SO-8 30V 29MOHM @ 10V- LEAD(PB) AND HALOGEN FREE
***et
Trans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R
***nell
MOSFET, DUAL P CHANNEL, 30V, 8A, SOIC-8
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:8Pinsrohs Compliant: No
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Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
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Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Parte # Mfg. Descripción Valores Precio
SI4925DDY-T1-GE3
DISTI # V72:2272_09216660		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R
RoHS: Compliant		3863
  • 3000:$0.3585
  • 1000:$0.3819
  • 500:$0.4579
  • 250:$0.5124
  • 100:$0.5142
  • 25:$0.6202
  • 10:$0.6232
  • 1:$0.7124
SI4925DDY-T1-GE3
DISTI # SI4925DDY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		35061In Stock
  • 1000:$0.4740
  • 500:$0.6004
  • 100:$0.7742
  • 10:$0.9800
  • 1:$1.1100
SI4925DDY-T1-GE3
DISTI # SI4925DDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		35061In Stock
  • 1000:$0.4740
  • 500:$0.6004
  • 100:$0.7742
  • 10:$0.9800
  • 1:$1.1100
SI4925DDY-T1-GE3
DISTI # SI4925DDY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		32500In Stock
  • 2500:$0.4295
SI4925DDY-T1-GE3
DISTI # 25790193		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R
RoHS: Compliant		3863
  • 3000:$0.3585
  • 1000:$0.3819
  • 500:$0.4579
  • 250:$0.5124
  • 100:$0.5142
  • 25:$0.6202
  • 23:$0.6232
SI4925DDY-T1-GE3
DISTI # 30606921		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R
RoHS: Compliant		55
  • 50:$0.6515
  • 10:$1.0519
  • 8:$3.5827
SI4925DDY-T1-GE3
DISTI # SI4925DDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4925DDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 32500
  • 2500:$0.3869
  • 5000:$0.3679
  • 10000:$0.3609
  • 15000:$0.3599
  • 25000:$0.3589
SI4925DDY-T1-GE3
DISTI # SI4925DDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4925DDY-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 665
  • 1:$0.4079
  • 25:$0.4069
  • 62:$0.4059
  • 125:$0.4049
  • 312:$0.4039
  • 625:$0.4029
  • 1250:$0.4019
SI4925DDY-T1-GE3
DISTI # SI4925DDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R (Alt: SI4925DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4925DDY-T1-GE3
    DISTI # 05W6952    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 7.3A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 05W6952)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$1.0000
    • 10:$0.8210
    • 25:$0.7570
    • 50:$0.6940
    • 100:$0.6300
    • 250:$0.5860
    • 500:$0.5420
    SI4925DDY-T1-GE3
    DISTI # 05W6952    		Vishay IntertechnologiesMOSFET, DUAL P CHANNEL, 30V, 8A, SOIC-8,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes0
    • 1:$0.2880
    • 10:$0.2880
    • 25:$0.2880
    • 50:$0.2880
    • 100:$0.2880
    • 250:$0.2880
    • 500:$0.2880
    SI4925DDY-T1-GE3.
    DISTI # 26AC3335    		Vishay IntertechnologiesDUAL P-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO35000
    • 1:$0.3990
    • 2500:$0.3900
    • 5000:$0.3800
    • 10000:$0.3650
    • 15000:$0.3600
    • 25000:$0.3540
    SI4925DDY-T1-GE3
    DISTI # 70459550    		Vishay SiliconixMOSFET 2P-CH 30V 8A 8-SOIC
    RoHS: Compliant    		0
    • 2500:$0.5530
    • 5000:$0.5200
    SI4925DDY-T1-GE3Vishay IntertechnologiesDual P-Channel 30 V 2.5 W 50 nC Silicon Surface Mount Mosfet - SOIC-8
    RoHS: Compliant    		17500Reel
    • 2500:$0.4800
    SI4925DDY-T1-GE3
    DISTI # 781-SI4925DDY-GE3    		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SO-8
    RoHS: Compliant    		44837
    • 1:$1.0000
    • 10:$0.8210
    • 100:$0.6300
    • 500:$0.5420
    • 1000:$0.4280
    • 2500:$0.3990
    • 5000:$0.3800
    • 10000:$0.3710
    SI4925DDY-T1-GE3
    DISTI # 7879052P    		Vishay IntertechnologiesMOSFET DUAL P-CH 30V 7.3A TRENCHFET SO8, RL6005
    • 25:£0.5940
    • 125:£0.4560
    • 625:£0.4100
    • 1250:£0.4000
    SI4925DDY-T1-GE3
    DISTI # 7879052    		Vishay IntertechnologiesMOSFET DUAL P-CH 30V 7.3A TRENCHFET SO8, PK505
    • 5:£0.9780
    • 25:£0.5940
    • 125:£0.4560
    • 625:£0.4100
    • 1250:£0.4000
    SI4925DDY-T1-GE3
    DISTI # SI4925DDY-T1-GE3    		Vishay IntertechnologiesTransistor: P-MOSFET x2,unipolar,-30V,-5.9A,5W,SO8699
    • 1:$0.5500
    • 3:$0.4500
    • 10:$0.4000
    • 100:$0.3400
    SI4925DDY-T1-GE3
    DISTI # TMOSP9533    		Vishay IntertechnologiesDUAL -30V8A29mOhm SO-8
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 2500:$0.3384
    SI4925DDY-T1-GE3
    DISTI # SI4925DDY-GE3    		Vishay Intertechnologies2xP-Ch 30V 8A 2,5W 0,029R SO8
    RoHS: Compliant    		10400
    • 50:€0.3690
    • 100:€0.3090
    • 500:€0.2790
    • 2500:€0.2700
    SI4925DDY-T1-GE3
    DISTI # 1779276    		Vishay IntertechnologiesMOSFET, PP-CH, 30V, 8A, SO8
    RoHS: Compliant    		16155
    • 5:£0.7090
    • 25:£0.6060
    • 100:£0.4650
    • 250:£0.4420
    • 500:£0.4180
    SI4925DDY-T1-GE3
    DISTI # C1S803601518871    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		55
    • 50:$0.5110
    • 10:$0.8250
    • 1:$2.8100
    SI4925DDY-T1-GE3
    DISTI # C1S803601298065    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		3863
    • 250:$0.5106
    • 100:$0.5124
    • 25:$0.6173
    • 10:$0.6202
    SI4925DDY-T1-GE3
    DISTI # 1779276    		Vishay IntertechnologiesMOSFET, PP-CH, 30V, 8A, SO8
    RoHS: Compliant    		20797
    • 1:$1.5900
    • 10:$1.3100
    • 100:$0.9970
    • 500:$0.8580
    • 1000:$0.7360
    SI4925DDY-T1-GE3
    DISTI # 1779276RL    		Vishay IntertechnologiesMOSFET, PP-CH, 30V, 8A, SO8
    RoHS: Compliant    		0
    • 1:$1.5900
    • 10:$1.3100
    • 100:$0.9970
    • 500:$0.8580
    • 1000:$0.7360
    SI4925DDY-T1-GE3
    DISTI # XSFT00000026527    		Vishay Siliconix 
    RoHS: Compliant    		30000
    • 2500:$0.3800
    SI4925DDY-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas - 27500
    • 2500:$0.3130
    • 5000:$0.2960
    • 10000:$0.2860
    SI4925BDY-T1-E3Vishay IntertechnologiesMOSFET 30 Volt 7.1 Amp 2.0WAmericas -
      Imagen Parte # Descripción
      SI4925DDY-T1-GE3

      Mfr.#: SI4925DDY-T1-GE3

      OMO.#: OMO-SI4925DDY-T1-GE3

      		 MOSFET -30V Vds 20V Vgs SO-8
      SI4925DDY-T1-GE3-CUT TAPE

      Mfr.#: SI4925DDY-T1-GE3-CUT TAPE

      OMO.#: OMO-SI4925DDY-T1-GE3-CUT-TAPE-1190

      		 Nuevo y original
      SI4925DDY

      Mfr.#: SI4925DDY

      OMO.#: OMO-SI4925DDY-1190

      		 Nuevo y original
      SI4925DDY-T1-E3

      Mfr.#: SI4925DDY-T1-E3

      OMO.#: OMO-SI4925DDY-T1-E3-1190

      		 Nuevo y original
      SI4925DDY-T1-GE3

      Mfr.#: SI4925DDY-T1-GE3

      OMO.#: OMO-SI4925DDY-T1-GE3-VISHAY

      		 MOSFET 2P-CH 30V 8A 8-SOIC
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de SI4925DDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,32 US$
      0,32 US$
      10
      0,31 US$
      3,06 US$
      100
      0,29 US$
      29,02 US$
      500
      0,27 US$
      137,00 US$
      1000
      0,26 US$
      257,90 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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