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SIA533EDJ-T1-GE3

SIA533EDJ-T1-GE3
Mfr. #:
SIA533EDJ-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N/P-CH 12V 4.5A SC70-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIA533EDJ-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SIA533EDJ-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIA533EDJ-GE3
Unidad de peso
0.000988 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR SC-70-6 Dual
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
PowerPAKR SC-70-6 Dual
Configuración
Único
Tipo FET
Canal N y P
Potencia máxima
7.8W
Tipo transistor
1 N-Channel 1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
12V
Entrada-Capacitancia-Ciss-Vds
420pF @ 6V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
4.5A
Rds-On-Max-Id-Vgs
34 mOhm @ 4.6A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
15nC @ 10V
Disipación de potencia Pd
7.8 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Id-corriente-de-drenaje-continua
4.5 A - 3.7 A
Vds-Drain-Source-Breakdown-Voltage
12 V
Resistencia a la fuente de desagüe de Rds
28 mOhms 48 mOhms
Polaridad del transistor
Canal N Canal P
Qg-Gate-Charge
10 nC 13 nC
Transconductancia directa-Mín.
11 S 21 S
Tags
SIA53, SIA5, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor; 4.5 A; 12 V; 6-Pin SC-70
***ure Electronics
SiA533EDJ Series Dual N & P Channel 12 V 34 mOhm 7.8 W Mosfet - PowerPAK SC-70-6
***et Europe
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R
***C
Trans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70
***Components
Trans MOSFET N/P-CH 12V 4.5A
***i-Key
MOSFET N/P-CH 12V 4.5A SC70-6
***
N- AND P-CHANNEL 12-V (D-S)
***ark
Transistor Polarity:n And P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.028Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv; Power Dissipation Pd:7.8W Rohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Parte # Mfg. Descripción Valores Precio
SIA533EDJ-T1-GE3
DISTI # V72:2272_09216848		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R2640
  • 1000:$0.2126
  • 500:$0.2515
  • 250:$0.3041
  • 100:$0.3051
  • 25:$0.3797
  • 10:$0.3814
  • 1:$0.4597
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		91879In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		91879In Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		90000In Stock
  • 3000:$0.2302
SIA533EDJ-T1-GE3
DISTI # 30208455		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R2640
  • 1000:$0.2126
  • 500:$0.2515
  • 250:$0.3041
  • 100:$0.3051
  • 34:$0.3797
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.4679
  • 6000:€0.3189
  • 12000:€0.2749
  • 18000:€0.2539
  • 30000:€0.2359
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA533EDJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1959
  • 6000:$0.1899
  • 12000:$0.1819
  • 18000:$0.1769
  • 30000:$0.1729
SIA533EDJ-T1-GE3
DISTI # SIA533EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA533EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIA533EDJ-T1-GE3
    DISTI # 04X9740    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
    • 1:$0.7600
    • 10:$0.6400
    • 25:$0.5860
    • 50:$0.5330
    • 100:$0.4790
    • 500:$0.3510
    • 1000:$0.2710
    SIA533EDJ-T1-GE3
    DISTI # 86R3786    		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 12V, POWERPAK SC70-6, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$0.2300
    • 3000:$0.2300
    SIA533EDJ-T1-GE3.
    DISTI # 15AC4247    		Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:7.8W , RoHS Compliant: No0
    • 1:$0.2300
    • 3000:$0.2300
    SIA533EDJ-T1-GE3
    DISTI # 70616551    		Vishay SiliconixSIA533EDJ-T1-GE3 Dual N/P-channel MOSFET Transistor,4.5 A,12 V,6-Pin SC-70
    RoHS: Compliant    		0
    • 300:$0.4300
    • 600:$0.3800
    • 1500:$0.3400
    • 3000:$0.3000
    SIA533EDJ-T1-GE3
    DISTI # 781-SIA533EDJ-T1-GE3    		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs PowerPAK SC-70
    RoHS: Compliant    		9531
    • 1:$0.6400
    • 10:$0.4880
    • 100:$0.3620
    • 500:$0.2980
    • 1000:$0.2300
    • 3000:$0.2100
    • 6000:$0.1960
    • 9000:$0.1830
    SIA533EDJ-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs PowerPAK SC-70
    RoHS: Compliant    		Americas - 3000
      SIA533EDJ-T1-GE3
      DISTI # C1S803601730507      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2640
      • 250:$0.3042
      • 100:$0.3051
      • 25:$0.3797
      • 10:$0.3814
      Imagen Parte # Descripción
      SIA533EDJ-T1-GE3

      Mfr.#: SIA533EDJ-T1-GE3

      OMO.#: OMO-SIA533EDJ-T1-GE3

      		 MOSFET -12V Vds 8V Vgs PowerPAK SC-70
      SIA533EDJ-T1-GE3-CUT TAPE

      Mfr.#: SIA533EDJ-T1-GE3-CUT TAPE

      OMO.#: OMO-SIA533EDJ-T1-GE3-CUT-TAPE-1190

      		 Nuevo y original
      SIA533EDJ-T1-GE3

      Mfr.#: SIA533EDJ-T1-GE3

      OMO.#: OMO-SIA533EDJ-T1-GE3-VISHAY

      		 MOSFET N/P-CH 12V 4.5A SC70-6
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de SIA533EDJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,26 US$
      0,26 US$
      10
      0,25 US$
      2,45 US$
      100
      0,23 US$
      23,22 US$
      500
      0,22 US$
      109,65 US$
      1000
      0,21 US$
      206,40 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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