SIR812DP-T1-GE3

SIR812DP-T1-GE3
Mfr. #:
SIR812DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V 60A 104W 1.45mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR812DP-T1-GE3 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
SIR812DP-T1-GE3 DatasheetSIR812DP-T1-GE3 Datasheet (P4-P6)SIR812DP-T1-GE3 Datasheet (P7-P9)SIR812DP-T1-GE3 Datasheet (P10-P12)SIR812DP-T1-GE3 Datasheet (P13)
ECAD Model:
Más información:
SIR812DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SIR812DP-GE3
Unidad de peso:
0.017870 oz
Tags
SIR81, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 30V, 60A, POWERPAK SO-8; Transistor Polarity:N Channel; Continuous
***ical
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
*** Devices
TRANS, SBU, TED, DPN, SIR812DP
***nell
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
SIR812DP N-Channel TrenchFET® Gen IV Power MOSFET
Vishay Siliconix's SiR812DP is a 30V N-Channel TrenchFET® Power MOSFET. SiR812DP 30V N-Channel TrenchFET Power MOSFET offers a low on-resistance of 0.00165 Ohms and 60 A continuous drain current. Available in the PowerPAK SO-8 package and 100% Rg and UIS tested, SiR812DP is well-suited for motor control, industrial, load switch, and ORing applications.Learn More
Parte # Mfg. Descripción Valores Precio
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.7238
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.7988
  • 500:$1.0118
  • 100:$1.3046
  • 10:$1.6510
  • 1:$1.8600
SIR812DP-T1-GE3
DISTI # SIR812DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 48.9A 8-Pin PowerPAK SO T/R (Alt: SIR812DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIR812DP-T1-GE3
    DISTI # 99W9564
    Vishay IntertechnologiesMOSFET, N-CH, 30V, 60A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$0.6960
    • 3000:$0.6910
    • 6000:$0.6580
    • 12000:$0.5830
    SIR812DP-T1-GE3
    DISTI # 04X9744
    Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
    • 1:$1.3600
    • 10:$1.3200
    • 100:$1.0400
    • 250:$0.9870
    • 500:$0.9220
    • 1000:$0.7380
    SIR812DP-T1-GE3
    DISTI # 78-SIR812DP-T1-GE3
    Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant
    436
    • 1:$1.6500
    • 10:$1.3600
    • 100:$1.0400
    • 500:$0.8940
    • 1000:$0.7850
    • 3000:$0.7840
    SIR812DP-T1-GE3
    DISTI # 2283689
    Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
    RoHS: Compliant
    4
    • 5:£1.1300
    • 25:£1.0300
    • 100:£0.7870
    • 250:£0.7320
    • 500:£0.6760
    SIR812DP-T1-GE3Vishay IntertechnologiesMOSFET 30V 60A 104W 1.45mohm @ 10V
    RoHS: Compliant
    Americas -
      SIR812DP-T1-GE3
      DISTI # 2283689
      Vishay IntertechnologiesMOSFET, N-CH, 30V, PPAK-SO8
      RoHS: Compliant
      4
      • 1:$2.6200
      • 10:$2.1600
      • 100:$1.6500
      • 500:$1.4200
      • 1000:$1.2400
      • 3000:$1.2400
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      OMO.#: OMO-503960-0694-404

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      Disponibilidad
      Valores:
      Available
      En orden:
      5000
      Ingrese la cantidad:
      El precio actual de SIR812DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,64 US$
      1,64 US$
      10
      1,35 US$
      13,50 US$
      100
      1,03 US$
      103,00 US$
      500
      0,89 US$
      446,50 US$
      1000
      0,70 US$
      704,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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