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IPB097N08N3GATMA1

IPB097N08N3GATMA1
Mfr. #:
IPB097N08N3GATMA1
Fabricante:
Rochester Electronics, LLC
Descripción:
Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB097N08N3GATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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Atributo del producto
Valor de atributo
Tags
IPB097N08N3G, IPB097, IPB09, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) TO-263 T/R
***i-Key
N-CHANNEL POWER MOSFET
***ure Electronics
Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***nell
MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 60 V 9 mOhm 36 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:71W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***et
Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263
***el Electronic
Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
***ment14 APAC
MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ure Electronics
N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ
***Yang
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ
***ure Electronics
N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB
*** Stop Electro
Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***el Electronic
Chip Resistor - Surface Mount 910Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 910 OHM 1% 1/10W 0402
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***rchild Semiconductor
This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Parte # Mfg. Descripción Valores Precio
IPB097N08N3GATMA1
DISTI # IPB097N08N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1)
RoHS: Compliant
Min Qty: 582
Container: Bulk		Americas - 0
  • 5820:$0.5459
  • 2910:$0.5559
  • 1746:$0.5749
  • 1164:$0.5969
  • 582:$0.6189
IPB097N08N3 G
DISTI # 726-IPB097N08N3G		Infineon Technologies AGMOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3
RoHS: Compliant		0
    IPB097N08N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		15767
    • 1000:$0.5700
    • 500:$0.6000
    • 100:$0.6200
    • 25:$0.6500
    • 1:$0.7000
    Imagen Parte # Descripción
    IPB097N08N3 G

    Mfr.#: IPB097N08N3 G

    OMO.#: OMO-IPB097N08N3-G

    		 MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3
    IPB097N08N3

    Mfr.#: IPB097N08N3

    OMO.#: OMO-IPB097N08N3-1190

    		 Nuevo y original
    IPB097N08N3G

    Mfr.#: IPB097N08N3G

    OMO.#: OMO-IPB097N08N3G-1190

    		 Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3G)
    IPB097N08N3GATMA1

    Mfr.#: IPB097N08N3GATMA1

    OMO.#: OMO-IPB097N08N3GATMA1-1190

    		 Trans MOSFET N-CH 80V 70A 3-Pin TO-263 T/R - Bulk (Alt: IPB097N08N3GATMA1)
    IPB097N08N3GS

    Mfr.#: IPB097N08N3GS

    OMO.#: OMO-IPB097N08N3GS-1190

    		 Nuevo y original
    IPB097N08N3GXT

    Mfr.#: IPB097N08N3GXT

    OMO.#: OMO-IPB097N08N3GXT-1190

    		 Nuevo y original
    IPB097N08N3 G

    Mfr.#: IPB097N08N3 G

    OMO.#: OMO-IPB097N08N3-G-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de IPB097N08N3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,94 US$
    0,94 US$
    10
    0,90 US$
    8,98 US$
    100
    0,85 US$
    85,05 US$
    500
    0,80 US$
    401,65 US$
    1000
    0,76 US$
    756,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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