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NSBC113EPDXV6T1G

NSBC113EPDXV6T1G
Mfr. #:
NSBC113EPDXV6T1G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSBC113EPDXV6T1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - Pre-polarizados
RoHS:
Y
Configuración:
Doble
Polaridad del transistor:
NPN
Resistencia de entrada típica:
1 kOhms
Relación de resistencia típica:
1
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-563-6
Colector de CC / Ganancia base hfe Min:
3
Voltaje colector-emisor VCEO Max:
50 V
Corriente continua del colector:
100 mA
Corriente máxima del colector de CC:
100 mA
Pd - Disipación de energía:
357 mW
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
NSBC113EPDXV6
Embalaje:
Carrete
Ganancia de corriente CC hFE Max:
3
Altura:
0.55 mm
Longitud:
1.6 mm
Ancho:
1.2 mm
Marca:
EN Semiconductor
Tipo de producto:
BJTs - Transistores bipolares - Pre-polarizados
Cantidad de paquete de fábrica:
4000
Subcategoría:
Transistores
Unidad de peso:
0.000106 oz
Tags
NSBC113, NSBC11, NSBC, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ical
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R
***emi
50V Dual Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
***ical
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
50V Dual NPN Bipolar Digital Transistor
***ark
Brt Transistor, 50V, 1K/1Kohm, Sot-563-6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
***ical
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***ure Electronics
NSBC114ED - 50 V 100 mA Dual NPN SMT Bias Resistor Transistor - SOT-563
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
Dual NPN Bipolar Digital Transistor (BRT)
***Yang
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
***nell
BRT TRANSISTOR, 50V, 10K; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
Parte # Mfg. Descripción Valores Precio
NSBC113EPDXV6T1G
DISTI # NSBC113EPDXV6T1GOSTR-ND		ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.1040
NSBC113EPDXV6T1G
DISTI # NSBC113EPDXV6T1GOSCT-ND		ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    NSBC113EPDXV6T1G
    DISTI # NSBC113EPDXV6T1GOSDKR-ND    		ON SemiconductorTRANS PREBIAS NPN/PNP SOT563
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      NSBC113EPDXV6T1G
      DISTI # NSBC113EPDXV6T1G      		ON SemiconductorTrans Digital BJT NPN/PNP 50V 0.1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSBC113EPDXV6T1G)
      RoHS: Compliant
      Min Qty: 8000
      Container: Reel      		Americas - 0
      • 8000:$0.0779
      • 16000:$0.0769
      • 24000:$0.0759
      • 40000:$0.0749
      • 80000:$0.0739
      NSBC113EPDXV6T1G
      DISTI # 49X8950      		ON SemiconductorBRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
      • 1:$0.4030
      • 25:$0.3090
      • 50:$0.2580
      • 100:$0.2160
      • 250:$0.1820
      • 500:$0.1550
      • 1000:$0.1260
      • 2500:$0.1070
      NSBC113EPDXV6T1G
      DISTI # 42K2317      		ON SemiconductorBRT TRANSISTOR, 50V, 1K/1KOHM, SOT-563-6,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:1kohm,Base-Emitter Resistor R2:1kohm,Resistor Ratio, R1 / R2:1(Ratio) RoHS Compliant: Yes0
      • 1:$0.1200
      NSBC113EPDXV6T1G
      DISTI # 863-NSBC113EPDXV6T1G      		ON SemiconductorBipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      RoHS: Compliant      		3800
      • 1:$0.3500
      • 10:$0.2660
      • 100:$0.1440
      • 1000:$0.1080
      • 4000:$0.0930
      • 8000:$0.0870
      • 24000:$0.0800
      • 48000:$0.0770
      • 100000:$0.0740
      NSBC113EPDXV6T1GON Semiconductor 
      RoHS: Not Compliant      		108000
      • 1000:$0.0900
      • 100:$0.1000
      • 500:$0.1000
      • 1:$0.1100
      • 25:$0.1100
      Imagen Parte # Descripción
      NSBC113EDXV6T1G

      Mfr.#: NSBC113EDXV6T1G

      OMO.#: OMO-NSBC113EDXV6T1G

      		 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      NSBC113EPDXV6T1G

      Mfr.#: NSBC113EPDXV6T1G

      OMO.#: OMO-NSBC113EPDXV6T1G

      		 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      NSBC113EF3T5G

      Mfr.#: NSBC113EF3T5G

      OMO.#: OMO-NSBC113EF3T5G

      		 Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
      NSBC113EDXV6T1

      Mfr.#: NSBC113EDXV6T1

      OMO.#: OMO-NSBC113EDXV6T1-ON-SEMICONDUCTOR

      		 TRANS 2NPN PREBIAS 0.5W SOT563
      NSBC113EDXV6T5

      Mfr.#: NSBC113EDXV6T5

      OMO.#: OMO-NSBC113EDXV6T5-ON-SEMICONDUCTOR

      		 TRANS 2NPN PREBIAS 0.5W SOT563
      NSBC113EPDXV6T1

      Mfr.#: NSBC113EPDXV6T1

      OMO.#: OMO-NSBC113EPDXV6T1-ON-SEMICONDUCTOR

      		 TRANS PREBIAS NPN/PNP SOT563
      NSBC113EF3T5G

      Mfr.#: NSBC113EF3T5G

      OMO.#: OMO-NSBC113EF3T5G-ON-SEMICONDUCTOR

      		 Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR (B
      NSBC113EPDXV6T1G

      Mfr.#: NSBC113EPDXV6T1G

      OMO.#: OMO-NSBC113EPDXV6T1G-ON-SEMICONDUCTOR

      		 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      NSBC113EDXV6T1G

      Mfr.#: NSBC113EDXV6T1G

      OMO.#: OMO-NSBC113EDXV6T1G-ON-SEMICONDUCTOR

      		 Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
      Disponibilidad
      Valores:
      Available
      En orden:
      1986
      Ingrese la cantidad:
      El precio actual de NSBC113EPDXV6T1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,35 US$
      0,35 US$
      10
      0,27 US$
      2,66 US$
      100
      0,14 US$
      14,40 US$
      1000
      0,11 US$
      108,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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