We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| PHB33NQ20T,118 DISTI # 1727-4765-1-ND | Nexperia | MOSFET N-CH 200V 32.7A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2048In Stock |
|
| PHB33NQ20T,118 DISTI # 1727-4765-6-ND | Nexperia | MOSFET N-CH 200V 32.7A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2048In Stock |
|
| PHB33NQ20T,118 DISTI # 1727-4765-2-ND | Nexperia | MOSFET N-CH 200V 32.7A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | 1600In Stock |
|
| PHB33NQ20T,118 DISTI # PHB33NQ20T118 | Nexperia | Trans MOSFET N-CH 200V 32.7A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: PHB33NQ20T118) Min Qty: 610 Container: Bulk | Americas - 0 |
|
| PHB33NQ20T,118 DISTI # PHB33NQ20T,118 | Nexperia | Trans MOSFET N-CH 200V 32.7A 3-Pin(2+Tab) D2PAK T/R (Alt: PHB33NQ20T,118) RoHS: Compliant Min Qty: 800 Container: Tape and Reel | Europe - 0 |
|
| PHB33NQ20T,118 DISTI # PHB33NQ20T,118 | Nexperia | Trans MOSFET N-CH 200V 32.7A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PHB33NQ20T,118) RoHS: Compliant Min Qty: 4800 Container: Reel | Americas - 0 |
|
| PHB33NQ20T,118 DISTI # 771-PHB33NQ20T118 | Nexperia | MOSFET TRENCHMOS RoHS: Compliant | 4682 |
|
| PHB33NQ20T118 | NXP Semiconductors | Now Nexperia PHB33NQ20T - Power Field-Effect Transistor, 32.7A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK RoHS: Not Compliant | 1329 |
|
| PHB33NQ20T118 | Nexperia | Now Nexperia PHB33NQ20T - Power Field-Effect Transistor, 32.7A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK RoHS: Not Compliant | 4000 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: PHB33NQ20T,118 OMO.#: OMO-PHB33NQ20T-118 |
MOSFET TRENCHMOS |
|
Mfr.#: PHB33NQ20T,118 OMO.#: OMO-PHB33NQ20T-118-NEXPERIA |
RF Bipolar Transistors MOSFET TRENCHMOS |
|
Mfr.#: PHB33NQ20T OMO.#: OMO-PHB33NQ20T-1190 |
Nuevo y original |
|
|
Mfr.#: PHB33NQ20T+118 OMO.#: OMO-PHB33NQ20T-118-1190 |
Now Nexperia PHB33NQ20T - Power Field-Effect Transistor, 32.7A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK |
|
|
Mfr.#: PHB33NQ20T118 OMO.#: OMO-PHB33NQ20T118-1190 |
Now Nexperia PHB33NQ20T - Power Field-Effect Transistor, 32.7A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK |