BSC037N08NS5ATMA1

Mfr. #:: BSC037N08NS5ATMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-Ch 80V 100A TDSON-8
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BSC037N08NS5ATMA1 Ficha de datos
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Más información:: BSC037N08NS5ATMA1 más información

Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: PG-TDSON-8

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 80 V

Id - Corriente de drenaje continua:: 100 A

Rds On - Resistencia de la fuente de drenaje:: 3.7 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 2.2 V

Vgs - Voltaje puerta-fuente:: 10 V

Qg - Carga de puerta:: 46 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 114 W

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: OptiMOS

Embalaje:: Carrete

Altura:: 1.27 mm

Longitud:: 5.9 mm

Serie:: OptiMOS 5

Tipo de transistor:: 1 N-Channel

Ancho:: 5.15 mm

Marca:: Infineon Technologies

Transconductancia directa - Mín .:: 47 S

Otoño:: 7 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 10 ns

Cantidad de paquete de fábrica:: 5000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 26 ns

Tiempo típico de retardo de encendido:: 14 ns

Parte # Alias:: BSC037N08NS5 SP001294988

Unidad de peso:: 0.017870 oz

Tags: BSC037N08, BSC037, BSC03, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

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BSC037N08NS5ATMA1 Descripción

***sible Micro: Transistor, Power MOSFET, N-Channel, 80V, 100A, 114W, TDSON8

***ark: MOSFET, N-CH, 80V, 100A, 150DEG C, 114W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 114W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ical: Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 80 V 3.1 mOhm 87 nC OptiMOS Power Mosfet - TO-263-3

***nell: MOSFET, N-CH, 80V, 120A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 167W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***icroelectronics: N-channel 80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

***et Europe: Trans MOSFET N-CH 80V 123A PowerFlat T/R

***ical: Trans MOSFET N-CH 80V 120A 8-Pin Power Flat T/R

***(Formerly Allied Electronics): MOSFET N-Ch 80V 26A STripFET PowerFLAT8

*** Electronic Components: MOSFET N-CH 80V 4 mOhm 24A STripFET VII

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 130A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***icroelectronics SCT: Power MOSFETs, 80V, 120A, PowerFLAT 5x6, Tape and Reel

***ment14 APAC: MOSFET, N-CH, 80V, 120A, 175DEG C, 135W;

***ronik: N-CH 80V 130A 3,6mOhm PFLAT5x6

***Yang: Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled

***ure Electronics: Single N-Channel 80 V 3 mOhm 61 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:80V; On Resistance

***ark: MOSFET, N-CH, 80V, 100A, 150DEG C, 139W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ark: MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co

***emi: N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ

***ure Electronics: Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

***nell: MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***ineon SCT: Single N-Channel 80 V 4 mOhm 54 nC OptiMOS Power Mosfet - PG-TDSON-8, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 80V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 104W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***icroelectronics: N-channel 80 V, 3.7 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

***ical: Trans MOSFET N-CH 80V 120A 8-Pin Power Flat EP T/R

***icroelectronics SCT: Power MOSFETs, 80V, 120A, PowerFLAT 5x6, Tape and Reel

***nell: MOSFET, N-CH, 80V, 120A, POWERFLAT-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 140W; Transistor Case Style: PowerFLAT; No. of Pins: 8Pins; Operating Temperature Max: 175°C; SVHC: No SVHC (17-Dec-2015)

BSC037N08NS5ATMA1 Más información

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1331In Stock	1000:$1.3049 500:$1.5749 100:$2.0249 10:$2.5200 1:$2.7900
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1331In Stock	1000:$1.3049 500:$1.5749 100:$2.0249 10:$2.5200 1:$2.7900
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.1359
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC037N08NS5ATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.1439 10000:$1.1029 20000:$1.0629 30000:$1.0269 50000:$1.0089
BSC037N08NS5ATMA1 DISTI # BSC037N08NS5	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: BSC037N08NS5) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0	5000:$1.1347 10000:$1.1032 15000:$1.0734 25000:$1.0451 50000:$1.0316 125000:$1.0183 250000:$1.0054
BSC037N08NS5ATMA1 DISTI # SP001294988	Infineon Technologies AG	Trans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: SP001294988) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€1.2959 10000:€1.0799 20000:€0.9969 30000:€0.9249 50000:€0.8639
BSC037N08NS5ATMA1 DISTI # 13AC8332	Infineon Technologies AG	MOSFET, N-CH, 80V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes	1863	1:$2.3400 10:$1.9900 25:$1.8600 50:$1.7200 100:$1.5900 250:$1.5000 500:$1.4000 1000:$1.1600
BSC037N08NS5ATMA1 DISTI # 726-BSC037N08NS5ATMA	Infineon Technologies AG	MOSFET N-Ch 80V 100A TDSON-8 RoHS: Compliant	9654	1:$2.3400 10:$1.9900 100:$1.5900 500:$1.4000 1000:$1.1600 2500:$1.0800 5000:$1.0400
BSC037N08NS5ATMA1 DISTI # 2725809	Infineon Technologies AG	MOSFET, N-CH, 80V, 100A, TDSON RoHS: Compliant	1863	1:$4.4600 10:$4.0200 100:$3.2300
BSC037N08NS5ATMA1 DISTI # 2725809	Infineon Technologies AG	MOSFET, N-CH, 80V, 100A, TDSON RoHS: Compliant	1847	1:£2.0500 10:£1.5500 100:£1.2300 250:£1.1600 500:£1.0900

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Disponibilidad

Valores:: 13
En orden:: 1996
Ingrese la cantidad:

El precio actual de BSC037N08NS5ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~2,33 US$~~; ~~2,33 US$~~

10: ~~1,98 US$~~; ~~19,80 US$~~

100: ~~1,58 US$~~; ~~158,00 US$~~

500: ~~1,39 US$~~; ~~695,00 US$~~

1000: ~~1,15 US$~~; ~~1 150,00 US$~~

2500: ~~1,07 US$~~; ~~2 675,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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BSC037N08NS5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes