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STD7ANM60N

STD7ANM60N
Mfr. #:
STD7ANM60N
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors MOSFET N-CH 600V 5A 0.84Ohm MDmesh II
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STD7ANM60N Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STD7ANM60N más información STD7ANM60N Product Details
Atributo del producto
Valor de atributo
Fabricante
STMicroelectronics
categoria de producto
FET - Single
Serie
MDmesh II
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3, DPak (2 Leads + Tab), SC-63
Tecnología
Si
Temperatura de funcionamiento
150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
DPAK
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
45W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
600V
Entrada-Capacitancia-Ciss-Vds
363pF @ 50V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
5A (Tc)
Rds-On-Max-Id-Vgs
900 mOhm @ 2.5A, 10V
Vgs-th-Max-Id
4V @ 250μA
Puerta-Carga-Qg-Vgs
14nC @ 10V
Disipación de potencia Pd
45 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
10 ns
Vgs-Puerta-Fuente-Voltaje
25 V
Id-corriente-de-drenaje-continua
5 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
900 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
26 ns
Tiempo de retardo de encendido típico
7 ns
Qg-Gate-Charge
14 nC
Tags
STD7, STD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
STD7ANM60N Series 600 V 5 A 0.9 Ohm N-Channel MDmesh™ II Power Mosfet - D-PAK-3
***ical
Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET N-CH 600V 5A 3-Pin D2PAK Tube
***ark
Mosfet, Aec-Q101, N-Ch, 600V, 5A, 45W Rohs Compliant: Yes
***Components
MOSFET N-Ch 600V 5A MDmesh D2PAK
***i-Key
MOSFET N-CH 600V DPAK
***ronik
N-CH 600V 5A 800mOhm DPAK
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 600V, 5A, 45W; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh II Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, AEC-Q101, CA-N, 600V, 5A, 45W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:5A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.8ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:45W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:MDmesh II Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STD7ANM60N
DISTI # V72:2272_17708017		STMicroelectronicsTrans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2099
  • 1000:$0.6560
  • 500:$0.8006
  • 250:$0.9815
  • 100:$0.9926
  • 25:$0.9940
  • 10:$0.9977
  • 1:$1.3244
STD7ANM60N
DISTI # 497-13940-1-ND		STMicroelectronicsMOSFET N-CH 600V DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4012In Stock
  • 1000:$0.7206
  • 500:$0.9127
  • 100:$1.1770
  • 10:$1.4890
  • 1:$1.6800
STD7ANM60N
DISTI # 497-13940-6-ND		STMicroelectronicsMOSFET N-CH 600V DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4012In Stock
  • 1000:$0.7206
  • 500:$0.9127
  • 100:$1.1770
  • 10:$1.4890
  • 1:$1.6800
STD7ANM60N
DISTI # 497-13940-2-ND		STMicroelectronicsMOSFET N-CH 600V DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.6530
STD7ANM60N
DISTI # 25929876		STMicroelectronicsTrans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		2099
  • 1000:$0.6560
  • 500:$0.8006
  • 250:$0.9815
  • 100:$0.9926
  • 25:$0.9940
  • 12:$0.9977
STD7ANM60N
DISTI # STD7ANM60N		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin D2PAK Tube - Tape and Reel (Alt: STD7ANM60N)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.6349
  • 5000:$0.6049
  • 10000:$0.5779
  • 15000:$0.5519
  • 25000:$0.5409
STD7ANM60N
DISTI # STD7ANM60N		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin D2PAK Tube (Alt: STD7ANM60N)
RoHS: Compliant
Min Qty: 2500
Container: Tube		Europe - 0
  • 2500:€0.7849
  • 5000:€0.6419
  • 10000:€0.5889
  • 15000:€0.5429
  • 25000:€0.5049
STD7ANM60N
DISTI # STD7ANM60N		STMicroelectronicsTrans MOSFET N-CH 600V 5A 3-Pin D2PAK Tube (Alt: STD7ANM60N)
RoHS: Compliant
Min Qty: 2500
Container: Tube		Asia - 0
    STD7ANM60N
    DISTI # 511-STD7ANM60N    		STMicroelectronicsMOSFET N-CH 600V 5A 0.84Ohm MDmesh II
    RoHS: Compliant    		0
    • 1:$1.4000
    • 10:$1.1900
    • 100:$0.9120
    • 500:$0.8060
    • 1000:$0.6360
    • 2500:$0.5640
    • 10000:$0.5430
    STD7ANM60N
    DISTI # C1S730200810201    		STMicroelectronicsTrans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		2099
    • 250:$0.9815
    • 100:$0.9926
    • 25:$0.9940
    • 10:$0.9977
    Imagen Parte # Descripción
    STD7ANM60N

    Mfr.#: STD7ANM60N

    OMO.#: OMO-STD7ANM60N

    		 MOSFET N-CH 600V 5A 0.84Ohm MDmesh II
    STD7ANM60N

    Mfr.#: STD7ANM60N

    OMO.#: OMO-STD7ANM60N-STMICROELECTRONICS

    		 IGBT Transistors MOSFET N-CH 600V 5A 0.84Ohm MDmesh II
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de STD7ANM60N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,81 US$
    0,81 US$
    10
    0,77 US$
    7,71 US$
    100
    0,73 US$
    73,02 US$
    500
    0,69 US$
    344,80 US$
    1000
    0,65 US$
    649,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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