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STW70N60M2

STW70N60M2
Mfr. #:
STW70N60M2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-CH 600V 0.031Ohm typ. 68A MDmesh M2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STW70N60M2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STW70N60M2 más información STW70N60M2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
68 A
Rds On - Resistencia de la fuente de drenaje:
30 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
118 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
450 W
Configuración:
Único
Nombre comercial:
MDmesh
Embalaje:
Tubo
Serie:
STW70N60M2
Tipo de transistor:
1 N-Channel
Marca:
STMicroelectronics
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
17 ns
Cantidad de paquete de fábrica:
600
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
155 ns
Tiempo típico de retardo de encendido:
32 ns
Unidad de peso:
1.340411 oz
Tags
STW70N60M, STW70N60, STW70N6, STW70N, STW70, STW7, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    J***i
    J***i
    HU

    Thanks... Good...

    2019-01-06
    A***u
    A***u
    MD

    Delivery is long. But the sensor is good.

    2019-02-13
    A***v
    A***v
    RU

    Got it. Let's check it out.

    2019-05-21
***icroelectronics
N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
***ure Electronics
STW70N60 Series 600 V 0.040 Ohm Flange Mount N-Channel Power Mosfet - TO-247
***ark
MOSFET, N-CH, 600V, 68A, 150DEG C, 450W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:68A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 68A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 72.8A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
MOSFET, N CH, 600V, 72.8A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:72.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0287ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***icroelectronics
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH Si 650V 84A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 84A TO-247
***nell
MOSFET, N CH, 650V, 84A, 0R024, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs
***r Electronics
Power Field-Effect Transistor, 84A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
Automotive-grade N-channel 650 V, 0.024 Ohm typ., 69 A MDmesh M5 Power MOSFET in a TO-247 package
***ical
Trans MOSFET N-CH Si 650V 69A Automotive 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
MOSFET, N-CH, AUTO, 650V, 69A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:69A; Source Voltage Vds:650V; On Resistance
***r Electronics
Power Field-Effect Transistor, 69A I(D), 650V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
MOSFET, N-CH, AEC-Q101, 650V, 69A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:69A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, AUTO, 650V, 69A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 69A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 450W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh V Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 76A, 36mΩ, TO-247
***ure Electronics
Single N-Channel 600 V 36 mOhm 285 nC 543 W Silicon Flange Mount Mosfet TO-247-3
***r Electronics
Power Field-Effect Transistor, 76A I(D), 600V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,76A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.04 Ohm typ., 65 A MDmesh(TM) II Power MOSFET in a TO-247 package
***et
Trans MOSFET N-CH 600V 55A 3-Pin(3+Tab) TO-247 Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 600V 65A TO247
***el Electronic
MOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET
***r Electronics
Power Field-Effect Transistor, 55A I(D), 600V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 650 V 37 mOhm 330 nC CoolMOS™ Power Mosfet - TO-247-3
***nell
MOSFET, N-CH, 650V, 83.2A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 83.2A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Parte # Mfg. Descripción Valores Precio
STW70N60M2
DISTI # 33600973		STMicroelectronicsTrans MOSFET N-CH 600V 68A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		600
  • 1:$12.9620
STW70N60M2
DISTI # 32925441		STMicroelectronicsTrans MOSFET N-CH 600V 68A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		420
  • 420:$6.0309
STW70N60M2
DISTI # 497-14226-5-ND		STMicroelectronicsMOSFET N-CH 600V 68A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		434In Stock
  • 510:$9.4395
  • 120:$10.6113
  • 30:$12.0437
  • 10:$12.5640
  • 1:$13.6700
STW70N60M2-4
DISTI # STW70N60M2-4-ND		STMicroelectronicsPOWER MOSFET
RoHS: Compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$7.9748
STW70N60M2
DISTI # V99:2348_18462184		STMicroelectronicsTrans MOSFET N-CH 600V 68A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		600
  • 510:$8.8890
  • 120:$10.0860
  • 30:$11.2070
  • 10:$11.9260
  • 1:$12.9620
STW70N60M2
DISTI # V36:1790_06567995		STMicroelectronicsTrans MOSFET N-CH 600V 68A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 600000:$7.2220
  • 300000:$7.2240
  • 60000:$7.3230
  • 6000:$7.4760
  • 600:$7.5010
STW70N60M2
DISTI # STW70N60M2		STMicroelectronicsTrans MOSFET N-CH 650V 68A 3-Pin TO-247 Tube (Alt: STW70N60M2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 540
  • 250:€7.7200
  • 100:€7.8800
  • 50:€8.0500
  • 10:€8.2100
  • 5:€10.0300
  • 1:€11.8500
STW70N60M2
DISTI # STW70N60M2		STMicroelectronicsTrans MOSFET N-CH 650V 68A 3-Pin TO-247 Tube (Alt: STW70N60M2)
RoHS: Compliant
Min Qty: 600
Container: Tube		Asia - 0
  • 30000:$5.0000
  • 15000:$5.1351
  • 6000:$5.2778
  • 3000:$5.5072
  • 1800:$5.7576
  • 1200:$6.0317
  • 600:$6.3333
STW70N60M2
DISTI # STW70N60M2		STMicroelectronicsTrans MOSFET N-CH 650V 68A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW70N60M2)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 6000:$7.8900
  • 3600:$7.9900
  • 2400:$8.3900
  • 1200:$8.7900
  • 600:$9.1900
STW70N60M2-4
DISTI # STW70N60M2-4		STMicroelectronicsMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: STW70N60M2-4)
RoHS: Not Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 6000:$6.1900
  • 3600:$6.2900
  • 2400:$6.5900
  • 1200:$6.9900
  • 600:$7.2900
STW70N60M2-4
DISTI # STW70N60M2-4		STMicroelectronicsMOS Power Transistors HV (>= 200V) (Alt: STW70N60M2-4)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€5.7900
  • 500:€6.1900
  • 100:€6.3900
  • 50:€6.6900
  • 25:€6.8900
  • 10:€7.1900
  • 1:€7.8900
STW70N60M2
DISTI # 98Y2508		STMicroelectronicsMOSFET, N-CH, 600V, 68A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:68A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes560
  • 1:$9.6400
STW70N60M2-4
DISTI # 74Y7944		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$6.1300
STW70N60M2
DISTI # 511-STW70N60M2		STMicroelectronicsMOSFET N-CH 600V 0.031Ohm typ. 68A MDmesh M2
RoHS: Compliant		90
  • 1:$13.0200
  • 10:$11.9700
  • 25:$11.4800
  • 100:$10.1100
  • 250:$9.6100
  • 500:$8.9900
STW70N60M2-4
DISTI # 511-STW70N60M2-4		STMicroelectronicsMOSFET N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in a TO247-4 package0
  • 1:$11.6600
  • 10:$10.5400
  • 25:$10.0500
  • 100:$8.7300
  • 250:$8.3400
  • 500:$7.6000
STW70N60M2
DISTI # 9173362P		STMicroelectronicsMOSFET N-CH 600V 68A MDMESH M2 TO-247, TU179
  • 20:£7.3200
  • 10:£7.9400
STW70N60M2
DISTI # STW70N60M2		STMicroelectronicsTransistor: N-MOSFET,unipolar,650V,43A,450W,TO24727
  • 25:$9.8600
  • 5:$12.2800
  • 1:$14.2600
STW70N60M2
DISTI # TMOSP11527		STMicroelectronicsN-CH 600V 31mOhm 68ATO247
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 600:$6.7400
STW70N60M2
DISTI # STW70N60M2		STMicroelectronicsN-Ch+Z-Dio 600V 68A 450W 0,04R TO247
RoHS: Compliant		20
  • 5:€7.7500
  • 30:€6.7500
  • 120:€6.2500
  • 300:€6.0000
STW70N60M2
DISTI # XSKDRABS0043380		STMicroelectronics 
RoHS: Compliant		420 in Stock0 on Order
  • 420:$8.1300
  • 90:$8.7100
STW70N60M2
DISTI # 2629761		STMicroelectronicsMOSFET, N-CH, 600V, 68A, TO-247-31162
  • 100:£7.4000
  • 50:£7.9000
  • 10:£8.4100
  • 5:£9.5300
  • 1:£10.5400
STW70N60M2
DISTI # 2629761		STMicroelectronicsMOSFET, N-CH, 600V, 68A, TO-247-3
RoHS: Compliant		1160
  • 510:$14.2300
  • 120:$16.0000
  • 30:$18.1500
  • 10:$18.9400
  • 1:$20.6000
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Disponibilidad
Valores:
203
En orden:
2186
Ingrese la cantidad:
El precio actual de STW70N60M2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
13,02 US$
13,02 US$
10
11,97 US$
119,70 US$
25
11,48 US$
287,00 US$
100
10,11 US$
1 011,00 US$
250
9,61 US$
2 402,50 US$
500
8,99 US$
4 495,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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