FCH125N60E

FCH125N60E
Mfr. #:
FCH125N60E
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCH125N60E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FCH125N60E más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
29 A
Rds On - Resistencia de la fuente de drenaje:
125 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V, 30 V
Qg - Carga de puerta:
78 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
278 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
SuperFET II
Embalaje:
Tubo
Altura:
20.82 mm
Longitud:
15.87 mm
Serie:
FCH125N60E
Tipo de transistor:
1 N-Channel
Ancho:
4.82 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
25 S
Otoño:
23 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
450
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
106 ns
Tiempo típico de retardo de encendido:
23 ns
Unidad de peso:
0.225401 oz
Tags
FCH12, FCH1, FCH
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-247
***et
Trans MOSFET N-CH 600V 29A 3-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 60V 29A
***i-Key
MOSFET N-CH 600V TO247
***ark
SF2 600V 125MOHM E TO247 / TUBE
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 29A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:278W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 29A, TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:29A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.102ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
Parte # Mfg. Descripción Valores Precio
FCH125N60E
DISTI # V36:1790_14141238
ON SemiconductorSUPERFET2 600V 125MOHM SLOW VE0
  • 450000:$1.7580
  • 225000:$1.7620
  • 45000:$2.1270
  • 4500:$2.8150
  • 450:$2.9320
FCH125N60E
DISTI # V99:2348_14141238
ON SemiconductorSUPERFET2 600V 125MOHM SLOW VE0
    FCH125N60E
    DISTI # FCH125N60E-ND
    ON SemiconductorMOSFET N-CH 600V 29A TO247
    RoHS: Compliant
    Min Qty: 450
    Container: Tube
    Temporarily Out of Stock
    • 450:$2.9320
    FCH125N60E
    DISTI # FCH125N60E
    ON SemiconductorSUPERFET2 600V 125MOHM SLOW VERSION - Bulk (Alt: FCH125N60E)
    Min Qty: 140
    Container: Bulk
    Americas - 0
    • 420:$2.1900
    • 700:$2.1900
    • 1400:$2.1900
    • 140:$2.2900
    • 280:$2.2900
    FCH125N60E
    DISTI # FCH125N60E
    ON SemiconductorSUPERFET2 600V 125MOHM SLOW VERSION - Rail/Tube (Alt: FCH125N60E)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube
    Americas - 0
    • 4500:$1.7900
    • 450:$1.8900
    • 900:$1.8900
    • 1800:$1.8900
    • 2700:$1.8900
    FCH125N60E
    DISTI # 512-FCH125N60E
    ON SemiconductorMOSFET 600V 29A N-Chnl SuperFET Easy-Drive
    RoHS: Compliant
    472
    • 1:$3.9900
    • 10:$3.3900
    • 100:$2.9400
    • 250:$2.7900
    • 500:$2.5000
    • 1000:$2.1100
    • 2500:$2.0000
    FCH125N60EFairchild Semiconductor Corporation 
    RoHS: Not Compliant
    324
    • 1000:$2.2100
    • 500:$2.3300
    • 100:$2.4200
    • 25:$2.5300
    • 1:$2.7200
    FCH125N60E
    DISTI # 2565213
    ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-247-30
    • 500:£1.8100
    • 250:£2.0200
    • 100:£2.1400
    • 10:£2.4600
    • 1:£3.2300
    FCH125N60E
    DISTI # 2565213
    ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-247-3
    RoHS: Compliant
    0
    • 1350:$4.6400
    • 900:$4.9600
    • 450:$6.1200
    • 10:$8.2700
    • 1:$9.2600
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    DS1220AD-200+

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    STW24N60M6

    Mfr.#: STW24N60M6

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    MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-247 package
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    Mfr.#: MUR160RLG

    OMO.#: OMO-MUR160RLG

    Rectifiers 600V 1A UltraFast
    FCA22N60N

    Mfr.#: FCA22N60N

    OMO.#: OMO-FCA22N60N

    MOSFET 600V N-Channel SupreMOS
    IRFP27N60KPBF

    Mfr.#: IRFP27N60KPBF

    OMO.#: OMO-IRFP27N60KPBF

    MOSFET RECOMMENDED ALT 844-IRFP27N60K
    IDW12G65C5XKSA1

    Mfr.#: IDW12G65C5XKSA1

    OMO.#: OMO-IDW12G65C5XKSA1

    Schottky Diodes & Rectifiers SIC DIODES
    BAT54WT1G

    Mfr.#: BAT54WT1G

    OMO.#: OMO-BAT54WT1G

    Schottky Diodes & Rectifiers 30V 200mW Single
    Disponibilidad
    Valores:
    472
    En orden:
    2455
    Ingrese la cantidad:
    El precio actual de FCH125N60E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,99 US$
    3,99 US$
    10
    3,39 US$
    33,90 US$
    100
    2,94 US$
    294,00 US$
    250
    2,79 US$
    697,50 US$
    500
    2,50 US$
    1 250,00 US$
    1000
    2,11 US$
    2 110,00 US$
    2500
    2,00 US$
    5 000,00 US$
    5000
    1,93 US$
    9 650,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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