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SIR850DP-T1-GE3

SIR850DP-T1-GE3
Mfr. #:
SIR850DP-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 25V 30A PPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR850DP-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
SIRxxxDP
embalaje
Carrete
Alias ​​de parte
SIR850DP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
41.7 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
11 ns
Hora de levantarse
20 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
30 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Resistencia a la fuente de desagüe de Rds
7.3 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
30 ns
Tiempo de retardo de encendido típico
20 ns
Transconductancia directa-Mín.
85 S
Modo de canal
Mejora
Tags
SIR85, SIR8, SIR
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIR850DP-T1-GE3 N-channel MOSFET Transistor; 20 A; 25 V; 8-Pin PowerPAK SO
***nell
N CHANNEL MOSFET, 25V, 30A, SOIC, FULL R
***ical
Trans MOSFET N-CH 25V 20.1A 8-Pin PowerPAK SO T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.009Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; Product Range:- Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SIR850DP-T1-GE3
DISTI # SIR850DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2121In Stock
  • 1000:$0.5438
  • 500:$0.6889
  • 100:$0.8883
  • 10:$1.1240
  • 1:$1.2700
SIR850DP-T1-GE3
DISTI # SIR850DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 3000:$0.4928
SIR850DP-T1-GE3
DISTI # SIR850DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    SIR850DP-T1-GE3
    DISTI # SIR850DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 25V 20.1A 8-Pin PowerPAK SO T/R (Alt: SIR850DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.9099
    • 6000:€0.6529
    • 12000:€0.5289
    • 18000:€0.4679
    • 30000:€0.4479
    SIR850DP-T1-GE3
    DISTI # 11X2603    		Vishay IntertechnologiesMOSFET, N CHANNEL, 25V, 30A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
    • 1:$1.1200
    • 10:$0.9220
    • 25:$0.8510
    • 50:$0.7790
    • 100:$0.7080
    • 500:$0.6090
    • 1000:$0.5340
    SIR850DP-T1-GE3.
    DISTI # 15AC4250    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:25V,On Resistance Rds(on):9mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Power Dissipation Pd:4.8W,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.5340
    • 3000:$0.5340
    SIR850DP-T1-GE3
    DISTI # 70616567    		Vishay SiliconixSIR850DP-T1-GE3 N-channel MOSFET Transistor,20 A,25 V,8-Pin PowerPAK SO
    RoHS: Compliant    		0
    • 300:$0.7300
    • 600:$0.6700
    • 1500:$0.6200
    • 3000:$0.5500
    SIR850DP-T1-GE3
    DISTI # 781-SIR850DP-T1-GE3    		Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		3715
    • 1:$1.1200
    • 10:$0.9220
    • 100:$0.7080
    • 500:$0.6090
    • 1000:$0.5340
    SIR850DP-T1-GE3
    DISTI # 8141294P    		Vishay IntertechnologiesTRANS MOSFET N-CH 25V 20.1A, RL360
    • 100:£0.4280
    • 200:£0.4120
    SIR850DP-T1-GE3
    DISTI # 2478936    		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 30A, SOIC, FULL REEL
    RoHS: Compliant    		0
    • 3000:$1.7600
    • 6000:$1.3500
    • 12000:$1.0900
    SIR850DP-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas -
    • 3000:$0.4640
    • 6000:$0.4380
    • 12000:$0.4250
    • 24000:$0.4190
    SIR850DP-T1-GE3
    DISTI # 2478936    		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 30A, SOIC, FULL R
    RoHS: Compliant    		0
    • 3000:£0.4690
    Imagen Parte # Descripción
    SIR850DP-T1-GE3

    Mfr.#: SIR850DP-T1-GE3

    OMO.#: OMO-SIR850DP-T1-GE3

    		 MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
    SIR850DP

    Mfr.#: SIR850DP

    OMO.#: OMO-SIR850DP-1190

    		 Nuevo y original
    SIR850DP-T1-GE3

    Mfr.#: SIR850DP-T1-GE3

    OMO.#: OMO-SIR850DP-T1-GE3-VISHAY

    		 MOSFET N-CH 25V 30A PPAK SO-8
    SIR850DPT1GE3

    Mfr.#: SIR850DPT1GE3

    OMO.#: OMO-SIR850DPT1GE3-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de SIR850DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,63 US$
    0,63 US$
    10
    0,60 US$
    5,97 US$
    100
    0,57 US$
    56,57 US$
    500
    0,53 US$
    267,10 US$
    1000
    0,50 US$
    502,80 US$
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