BSP372NH6327XTSA1

BSP372NH6327XTSA1
Mfr. #:
BSP372NH6327XTSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET SMALL SIGNAL N-CH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSP372NH6327XTSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
BSP372NH6327XTSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-223-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
1.8 A
Rds On - Resistencia de la fuente de drenaje:
230 mOhms
Vgs th - Voltaje umbral puerta-fuente:
800 mV
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
9.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.8 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.6 mm
Longitud:
6.5 mm
Tipo de transistor:
1 N-Channel
Ancho:
3.5 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
5.1 S
Otoño:
18 ns
Tipo de producto:
MOSFET
Hora de levantarse:
6.7 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
47.3 ns
Tiempo típico de retardo de encendido:
5.1 ns
Parte # Alias:
BSP372N H6327 SP001059326
Unidad de peso:
0.003951 oz
Tags
BSP372NH, BSP372N, BSP372, BSP37, BSP3, BSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***klin Elektronik
INFINEON SMD Autom. MOSFET NFET 100V 1,8A 230mΩ 150°C SOT-223 BSP372
***p One Stop
Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 100 V 270 mOhm 14.3 nC OptiMOS™ Power Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt:
***ment14 APAC
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Source Voltage Vds:100V; On Resistance
***ark
MOSFET, N-CH, 100V, 1.8A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.153ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 230 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 6.7 / Turn-OFF Delay Time ns = 47.3 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ohm; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55
***ure Electronics
Single N-Channel 100 V 0.2 Ohm 17 nC HEXFET® Power Mosfet - SOT-223
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
***ical
Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 Tube
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. of Pins:4Pins RoHS Compliant: Yes
***nell
MOSFET, N, 100V, 1.6A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 13A; SMD Marking: FL4310; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***p One Stop
Trans MOSFET N-CH 100V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 100 V 24 mOhm 6.2 nC OptiMOS™ Small Signal Mosfet - SOT-223
***Yang
Trans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt:
***ment14 APAC
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Source Voltage Vds:100V; On Resistance
***ark
MOSFET, AEC-Q101, N-CH, 100V, SOT223-4; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***nell
MOSFET, N-CH, 100V, 1.8A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.177ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.8 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 240 / Gate-Source Voltage V = 20 / Fall Time ns = 13.5 / Rise Time ns = 5.9 / Turn-OFF Delay Time ns = 21.9 / Turn-ON Delay Time ns = 4.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
***emi
Power MOSFET, N-Channel, A-FET, 100 V, 2.3 A, 0.2 Ω, SOT-223
***Yang
Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***ment14 APAC
MOSFET, N-CH, 100V, 2.3A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:100V; On Resistance
***ark
Transistor,mosfet,n-Channel,100V V(Br)Dss,2.3A I(D),sot-223 Rohs Compliant: Yes
***Yang
Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel
***ser
MOSFETs 100V N-Channel a-FET Logic Level
***r Electronics
Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***enic
100V 2.3A 220m´Î@5V1.15A 2.7W 2V@250uA 39pF@25V N Channel 340pF@25V 10.2nC@5V -55¡Í~+150¡Í@(Tj) SOT-223 MOSFETs ROHS
***emi
N-Channel A-FET 200V, 1.13A, 800mΩ
***S
French Electronic Distributor since 1988
***ure Electronics
N-Channel 100 V 0.25 Ohm Power MOSFET Surface Mount -SOT-223-3
***ical
Trans MOSFET N-CH 100V 2A Automotive 4-Pin(3+Tab) SOT-223 T/R
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Variants: Enhancement mode Power dissipation: 2 W
***ark
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:2W; No. of Pins:4Pins RoHS Compliant: No
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
Parte # Mfg. Descripción Valores Precio
BSP372NH6327XTSA1
DISTI # BSP372NH6327XTSA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 1.7A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6177In Stock
  • 500:$0.4862
  • 100:$0.6429
  • 10:$0.8220
  • 1:$0.9400
BSP372NH6327XTSA1
DISTI # BSP372NH6327XTSA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 1.7A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6177In Stock
  • 500:$0.4862
  • 100:$0.6429
  • 10:$0.8220
  • 1:$0.9400
BSP372NH6327XTSA1
DISTI # BSP372NH6327XTSA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 1.7A SOT-223
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
6000In Stock
  • 1000:$0.3851
BSP372NH6327XTSA1
DISTI # SP001059326
Infineon Technologies AGTrans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R (Alt: SP001059326)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 48020
  • 1000:€0.2809
  • 2000:€0.2299
  • 4000:€0.2099
  • 6000:€0.1939
  • 10000:€0.1799
BSP372NH6327XTSA1
DISTI # BSP372NH6327XTSA1
Infineon Technologies AGTrans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP372NH6327XTSA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 2000:$0.3089
  • 4000:$0.3079
  • 6000:$0.3079
  • 10000:$0.3069
  • 20000:$0.3059
BSP372NH6327XTSA1
DISTI # BSP372N H6327
Infineon Technologies AGTrans MOSFET N-CH 100V 1.8A 4-Pin SOT-223 T/R (Alt: BSP372N H6327)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 0
  • 1000:$0.2443
  • 2000:$0.2375
  • 3000:$0.2311
  • 5000:$0.2250
  • 10000:$0.2221
  • 25000:$0.2192
  • 50000:$0.2165
BSP372NH6327XTSA1
DISTI # 97Y1261
Infineon Technologies AGMOSFET, N-CH, 100V, 1.8A, SOT-223-4,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.153ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.4V,Power RoHS Compliant: Yes3123
  • 100:$0.3950
  • 50:$0.4680
  • 25:$0.5400
  • 10:$0.6130
  • 1:$0.7400
BSP372NH6327XTSA1
DISTI # 726-BSP372NH6327XTSA
Infineon Technologies AGMOSFET SMALL SIGNAL N-CH
RoHS: Compliant
25633
  • 1:$0.7300
  • 10:$0.6130
  • 100:$0.3950
  • 1000:$0.3160
BSP372N H6327
DISTI # 726-BSP372NH6327
Infineon Technologies AGMOSFET SMALL SIGNAL N-CH
RoHS: Compliant
2484
  • 1:$0.7300
  • 10:$0.6130
  • 100:$0.3950
  • 1000:$0.3160
BSP372NH6327XTSA1Infineon Technologies AGSingle N-Channel 100 V 270 mOhm 14.3 nC OptiMOS Power Mosfet - SOT-223
RoHS: Not Compliant
990Cut Tape/Mini-Reel
  • 1:$0.6250
  • 50:$0.4300
  • 100:$0.4050
  • 250:$0.3700
  • 500:$0.3450
BSP372NH6327XTSA1
DISTI # 1107754
Infineon Technologies AGMOSFET NCHANNEL 100V 1.8A OPTIMOS SOT223, PK450
  • 6250:£0.1780
  • 2500:£0.1810
  • 1250:£0.2140
  • 250:£0.2690
  • 50:£0.4250
BSP372NH6327XTSA1
DISTI # BSP372NH6327XTSA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,1.8A,1.8W,SOT223914
  • 3:$0.4155
  • 25:$0.3560
  • 100:$0.2872
  • 250:$0.2484
  • 1000:$0.2313
BSP372NH6327XTSA1
DISTI # BSP372NH6327XTSA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,1.8A,1.8W,SOT223914
  • 3:$0.4136
  • 25:$0.3544
  • 100:$0.2859
  • 250:$0.2473
  • 1000:$0.2303
BSP372NH6327XTSA1
DISTI # XSFP00000152037
Infineon Technologies AGSmall Signal Field-Effect Transistor, 0.23AI(D),50V, 1-Element, P-Channel, Silicon,Metal-oxideSemiconductor FET
RoHS: Compliant
534
  • 534:$1.1400
  • 160:$1.2500
BSP372NH6327XTSA1
DISTI # XSKDRABV0017820
Infineon Technologies AG 
RoHS: Compliant
82020
  • 82020:$0.2680
  • 2000:$0.2871
BSP372NH6327XTSA1
DISTI # 2617434
Infineon Technologies AGMOSFET, N-CH, 100V, 1.8A, SOT-223-4
RoHS: Compliant
3118
  • 500:£0.2320
  • 250:£0.2760
  • 100:£0.3150
  • 25:£0.4380
  • 5:£0.5500
BSP372NH6327XTSA1
DISTI # 2617434
Infineon Technologies AGMOSFET, N-CH, 100V, 1.8A, SOT-223-4
RoHS: Compliant
3123
  • 500:$0.7090
  • 100:$0.9570
  • 10:$1.2400
  • 1:$1.4300
Imagen Parte # Descripción
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OMO.#: OMO-IRFL9110TRPBF

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RB168VYM-40FHTR

Mfr.#: RB168VYM-40FHTR

OMO.#: OMO-RB168VYM-40FHTR

Schottky Diodes & Rectifiers 40V Vr 1A Io SBD SOD-323HE 1A
CRCW06034K70FKEAC

Mfr.#: CRCW06034K70FKEAC

OMO.#: OMO-CRCW06034K70FKEAC

Thick Film Resistors - SMD 1/10Watt 4.7Kohms 1% Commercial Use
RB168VYM-40FHTR

Mfr.#: RB168VYM-40FHTR

OMO.#: OMO-RB168VYM-40FHTR-ROHM-SEMI

SCHOTTKY BARRIER DIODE (AEC-Q101
IRFL9110TRPBF

Mfr.#: IRFL9110TRPBF

OMO.#: OMO-IRFL9110TRPBF-VISHAY

MOSFET P-CH 100V 1.1A SOT223
CRCW06034K70FKEAC

Mfr.#: CRCW06034K70FKEAC

OMO.#: OMO-CRCW06034K70FKEAC-VISHAY-DALE

D11/CRCW0603-C 100 4K7 1% ET1
C1206C102KDGACAUTO

Mfr.#: C1206C102KDGACAUTO

OMO.#: OMO-C1206C102KDGACAUTO-KEMET

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1000pF 1000volts 10%
CRCW0603100RFKEAC

Mfr.#: CRCW0603100RFKEAC

OMO.#: OMO-CRCW0603100RFKEAC-VISHAY-DALE

D11/CRCW0603-C 100 100R 1% ET1
CRCW06031M00FKEAC

Mfr.#: CRCW06031M00FKEAC

OMO.#: OMO-CRCW06031M00FKEAC-VISHAY-DALE

D11/CRCW0603-C 100 1M0 1% ET1
CRCW060310K0FKEAC

Mfr.#: CRCW060310K0FKEAC

OMO.#: OMO-CRCW060310K0FKEAC-VISHAY-DALE

D11/CRCW0603-C 100 10K 1% ET1
Disponibilidad
Valores:
21
En orden:
2004
Ingrese la cantidad:
El precio actual de BSP372NH6327XTSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,73 US$
0,73 US$
10
0,61 US$
6,13 US$
100
0,40 US$
39,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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