IXYX100N120C3

IXYX100N120C3
Mfr. #:
IXYX100N120C3
Fabricante:
Littelfuse
Descripción:
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXYX100N120C3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYX100N120C3 DatasheetIXYX100N120C3 Datasheet (P4-P6)
ECAD Model:
Más información:
IXYX100N120C3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247PLUS-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.9 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
188 A
Pd - Disipación de energía:
1150 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
IXYX100N120C3
Embalaje:
Tubo
Corriente continua de colector Ic Max:
188 A
Marca:
IXYS
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
30
Subcategoría:
IGBT
Nombre comercial:
XPT
Unidad de peso:
1.340411 oz
Tags
IXYX10, IXYX1, IXYX, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IGBT, SINGLE, 1.2KV, 82A, TO-247AD; DC Collector Current: 82A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 1.25kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No.
***ark
Igbt, Npn, 1.2Kv, 82A, To-247Ad; Continuous Collector Current:82A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:1.25Kw; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes
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***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
IGBT, SINGLE, 1.2KV, 160A, TO-247-3; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 454W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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1200V Low VCEon Trench Discrete IGBT in a TO-247AD package
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IGBT, 1200V, 140A, TO-247AC; DC Collector Current: 140A; Collector Emitter Saturation Voltage Vce(on): 1.2kV; Power Dissipation Pd: 556W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AC; No. of Pins
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IGBT, Ultra Field stop - 1200V 40A, Low VCEsat
***nell
IGBT, SINGLE, 1.2KV, 160A, TO-247-3; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 454W; Collector Emitter Voltage V(br)ceo: 1.2k; Available until stocks are exhausted
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXYX100N120C3
DISTI # V36:1790_15876700
IXYS CorporationHIGH-SPEED IGBT0
    IXYX100N120C3
    DISTI # IXYX100N120C3-ND
    IXYS CorporationIGBT 1200V 188A 1150W PLUS247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    5In Stock
    • 510:$13.6568
    • 120:$16.0114
    • 30:$17.4243
    • 10:$18.8370
    • 1:$20.7200
    IXYX100N120C3
    DISTI # 747-IXYX100N120C3
    IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
    RoHS: Compliant
    258
    • 1:$19.7300
    • 10:$17.9400
    • 25:$16.6000
    • 50:$15.6400
    • 100:$15.2500
    • 250:$13.9000
    • 500:$13.0100
    IXYX100N120C3
    DISTI # 8080225P
    IXYS CorporationIGBT N-CH 1200V 100A XPT GENX3 PLUS247, TU90
    • 90:£13.0200
    • 30:£13.7100
    • 10:£14.3000
    • 5:£14.9300
    Imagen Parte # Descripción
    IKQ75N120CH3XKSA1

    Mfr.#: IKQ75N120CH3XKSA1

    OMO.#: OMO-IKQ75N120CH3XKSA1

    IGBT Transistors IGBT PRODUCTS
    FGY160T65SPD-F085

    Mfr.#: FGY160T65SPD-F085

    OMO.#: OMO-FGY160T65SPD-F085

    IGBT Transistors 650V Field Stop Gen3 Trench IGBT
    IAUT300N08S5N012ATMA2

    Mfr.#: IAUT300N08S5N012ATMA2

    OMO.#: OMO-IAUT300N08S5N012ATMA2

    MOSFET MOSFET_(75V,120V(
    FFSH15120A

    Mfr.#: FFSH15120A

    OMO.#: OMO-FFSH15120A

    Schottky Diodes & Rectifiers 1200V 15A SIC SBD
    UCC28C43QDRQ1

    Mfr.#: UCC28C43QDRQ1

    OMO.#: OMO-UCC28C43QDRQ1

    Switching Controllers BICMOS CURRENT MODE PWM CONTROLLER
    RT8522-20-3M0

    Mfr.#: RT8522-20-3M0

    OMO.#: OMO-RT8522-20-3M0

    Common Mode Chokes / Filters 20A 3mH 2-Wire Vert PCB Mounting
    CRM2512-FX-5R10ELF

    Mfr.#: CRM2512-FX-5R10ELF

    OMO.#: OMO-CRM2512-FX-5R10ELF-BOURNS

    Thick Film Resistors - SMD CHIP RESISTOR Low Value
    IAUT300N08S5N012ATMA2

    Mfr.#: IAUT300N08S5N012ATMA2

    OMO.#: OMO-IAUT300N08S5N012ATMA2-INFINEON-TECHNOLOGIES

    MOSFET N-CH 75V 120V 8HSOF
    IXFX300N20X3

    Mfr.#: IXFX300N20X3

    OMO.#: OMO-IXFX300N20X3-IXYS-CORPORATION

    200V/300A ULTRA JUNCTION X3-CLAS
    IKQ75N120CH3XKSA1

    Mfr.#: IKQ75N120CH3XKSA1

    OMO.#: OMO-IKQ75N120CH3XKSA1-INFINEON-TECHNOLOGIES

    IGBT HS SW 1200V 75A TO-247-3
    Disponibilidad
    Valores:
    192
    En orden:
    2175
    Ingrese la cantidad:
    El precio actual de IXYX100N120C3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    19,73 US$
    19,73 US$
    10
    17,94 US$
    179,40 US$
    25
    16,60 US$
    415,00 US$
    50
    15,64 US$
    782,00 US$
    100
    15,25 US$
    1 525,00 US$
    250
    13,90 US$
    3 475,00 US$
    500
    13,01 US$
    6 505,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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