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GS8160E18DGT-200I

GS8160E18DGT-200I
Mfr. #:
GS8160E18DGT-200I
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 1M x 18 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8160E18DGT-200I Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8160E18DGT-200I más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
1 M x 18
Tiempo de acceso:
6.5 ns
Frecuencia máxima de reloj:
200 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
215 mA, 215 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TQFP-100
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8160E18DGT
Escribe:
Tubería / Flujo a través
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
36
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
SyncBurst
Tags
GS8160E18DGT-20, GS8160E18DGT-2, GS8160E18D, GS8160E1, GS8160E, GS8160, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 6.5ns/3ns 100-Pin TQFP
***ical
SRAM Chip Sync Single 2.5V 18M-Bit 512K x 36 3.5ns 100-Pin TQFP
***ure Electronics
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mb (512K x 36) Parallel 166MHz 3.5ns
***egrated Device Technology
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
***ure Electronics
AS8C161831 Series 18 Mb (1 M x 18) 2.5 V 3.2 ns Synchronous RAM - TQFP100
***et
SRAM Chip Sync Dual 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP
***se
18Mb SYNC SRAM 1M x 18 ZBT(Pipelined) 2.5V 166MHz 100TQFP
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
***ure Electronics
AS8C161831 Series 18 Mb (512 K x 36) 2.5 V 6 ns Synchronous RAM - TQFP-100
***et
SRAM Chip Sync Dual 2.5V 18M-Bit 512K x 36 3.5ns 100-Pin TQFP
***metry Electronics
SDRAM 18MB 166MHz 2.5V 512K x 36 100 TQFP
***-Wing Technology
Surface Mount Tray SRAM - Synchronous SDR PIPELINED ARCHITECTURE ic memory 166MHz 3.5ns 1.6mm 18Mb
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
***egrated Device Technology
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
***pmh
IC DRAM 512M PARALLEL 54TFBGA
*** Electronic Components
SRAM 2.5V CORE ZBT X18 18M
***egrated Device Technology
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
***enic
TQFP-100(14x14) SRAM ROHS
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
*** Electronic Components
SRAM 2.5V CORE ZBT X18 18M
***p One Stop
SRAM Chip Sync Quad 3.3V 18M-bit 512K x 36 3.1ns 100-Pin TQFP
***-Wing Technology
3A991 Surface Mount Tray 512KX36 ic memory 200MHz 3.1ns 20mm 475mA
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
Ic, Sram, 18Mbit, 3.1Ns, Tqfp-100; Sram Type:Pipelined Sram; Memory Configuration:512K X 36Bit; Ic Case/Package:Tqfp; No. Of Pins:100Pins; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Supply Voltage Nom:3.3V; Msl:- Rohs Compliant: Yes |Integrated Silicon Solution (Issi) IS61NLP51236-200TQLI
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Imagen Parte # Descripción
GS8160E18DGT-200

Mfr.#: GS8160E18DGT-200

OMO.#: OMO-GS8160E18DGT-200

 SRAM 2.5 or 3.3V 1M x 18 18M
GS8160E18DGT-150

Mfr.#: GS8160E18DGT-150

OMO.#: OMO-GS8160E18DGT-150

 SRAM 2.5 or 3.3V 1M x 18 18M
GS8160E18DGT-333

Mfr.#: GS8160E18DGT-333

OMO.#: OMO-GS8160E18DGT-333

 SRAM 2.5 or 3.3V 1M x 18 18M
GS8160E18DGT-150V

Mfr.#: GS8160E18DGT-150V

OMO.#: OMO-GS8160E18DGT-150V

 SRAM 1.8/2.5V 1M x 18 18M
GS8160E18DGT-200V

Mfr.#: GS8160E18DGT-200V

OMO.#: OMO-GS8160E18DGT-200V

 SRAM 1.8/2.5V 1M x 18 18M
GS8160E18DGT-150IV

Mfr.#: GS8160E18DGT-150IV

OMO.#: OMO-GS8160E18DGT-150IV

 SRAM 1.8/2.5V 1M x 18 18M
GS8160E18DGT-333V

Mfr.#: GS8160E18DGT-333V

OMO.#: OMO-GS8160E18DGT-333V

 SRAM 1.8/2.5V 1M x 18 18M
GS8160E18DGT-333IV

Mfr.#: GS8160E18DGT-333IV

OMO.#: OMO-GS8160E18DGT-333IV

 SRAM 1.8/2.5V 1M x 18 18M
GS8160E18DGT-375

Mfr.#: GS8160E18DGT-375

OMO.#: OMO-GS8160E18DGT-375

 SRAM 2.5 or 3.3V 1M x 18 18M
GS8160E18DGT-400I

Mfr.#: GS8160E18DGT-400I

OMO.#: OMO-GS8160E18DGT-400I

 SRAM 2.5 or 3.3V 1M x 18 18M
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de GS8160E18DGT-200I es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
15,23 US$
15,23 US$
25
14,14 US$
353,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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