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NSBC114YDXV6T5G

NSBC114YDXV6T5G
Mfr. #:
NSBC114YDXV6T5G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSBC114YDXV6T5G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBC114YDXV6T5G DatasheetNSBC114YDXV6T5G Datasheet (P4-P6)NSBC114YDXV6T5G Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - Pre-polarizados
RoHS:
Y
Configuración:
Doble
Polaridad del transistor:
NPN
Resistencia de entrada típica:
10 kOhms
Relación de resistencia típica:
0.21
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-563-6
Colector de CC / Ganancia base hfe Min:
80
Voltaje colector-emisor VCEO Max:
50 V
Corriente continua del colector:
0.1 A
Corriente máxima del colector de CC:
100 mA
Pd - Disipación de energía:
357 mW
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
NSBC114YDXV6
Embalaje:
Carrete
Ganancia de corriente CC hFE Max:
80
Altura:
0.55 mm
Longitud:
1.6 mm
Ancho:
1.2 mm
Marca:
EN Semiconductor
Tipo de producto:
BJTs - Transistores bipolares - Pre-polarizados
Cantidad de paquete de fábrica:
8000
Subcategoría:
Transistores
Unidad de peso:
0.000106 oz
Tags
NSBC114YDX, NSBC114YD, NSBC114Y, NSBC114, NSBC11, NSBC, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
***emi
Dual NPN Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-563; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:6 Pin Rohs Compliant: Yes
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ure Electronics
Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes
***nell
TRANS, AEC-Q101, NPN/PNP, 50V, SOT-563; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.21(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***ponent Stockers USA
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
***enic
1 PCS NPN1 PCS PNP - Pre-Biased(Dual) 500mW 100mA 50V SOT-563 Digital Transistors ROHS
***emi
Complementary Bipolar Digital Transistor (BRT)
***ment14 APAC
TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6
***ure Electronics
NSBC114 Series 50 V 100 mA Complementary Bias Resistor Transistor - SOT-563
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-563, Full Reel; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; No. Of Pins:6 Pin Rohs Compliant: Yes
***nell
TRANSISTOR, RF, NPN/PNP, 50V, SOT-563-6; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 4.7(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
***ical
Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
***emi
Complementary Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
NSBC114YDXV6T5G
DISTI # NSBC114YDXV6T5G-ND		ON SemiconductorTRANS 2NPN PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 8000:$0.0977
NSBC114YDXV6T5G
DISTI # NSBC114YDXV6T5G		ON SemiconductorTrans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBC114YDXV6T5G)
RoHS: Compliant
Min Qty: 8000
Container: Reel		Americas - 0
  • 8000:$0.0779
  • 16000:$0.0769
  • 32000:$0.0759
  • 48000:$0.0749
  • 80000:$0.0739
NSBC114YDXV6T5G
DISTI # NSBC114YDXV6T5G		ON SemiconductorTrans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R (Alt: NSBC114YDXV6T5G)
RoHS: Compliant
Min Qty: 8000
Container: Tape and Reel		Europe - 0
  • 8000:€0.1519
  • 16000:€0.1179
  • 32000:€0.0959
  • 48000:€0.0809
  • 80000:€0.0759
NSBC114YDXV6T5G
DISTI # 42K2328		ON SemiconductorBRT TRANSISTOR, 50V, 47K/10KOHM, SOT-563,Digital Transistor Polarity:Dual NPN,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:47kohm RoHS Compliant: Yes0
  • 1:$0.1200
NSBC114YDXV6T5GON Semiconductor 
RoHS: Not Compliant		88000
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
NSBC114YDXV6T1G
DISTI # 863-NSBC114YDXV6T1G		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual NPN
RoHS: Compliant		17649
  • 1:$0.3900
  • 10:$0.2510
  • 100:$0.1080
  • 1000:$0.0830
  • 4000:$0.0630
  • 8000:$0.0560
  • 24000:$0.0530
NSBC114YDXV6T5G
DISTI # 863-NSBC114YDXV6T5G		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual NPN
RoHS: Compliant		7771
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 2500:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 96000:$0.0740
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NSBC114YDXV6T1G

Mfr.#: NSBC114YDXV6T1G

OMO.#: OMO-NSBC114YDXV6T1G

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OMO.#: OMO-LM4041D12IDBZR-TEXAS-INSTRUMENTS

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TLV1117-50IDCYR

Mfr.#: TLV1117-50IDCYR

OMO.#: OMO-TLV1117-50IDCYR-TEXAS-INSTRUMENTS

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Mfr.#: CGB3B1X5R1C225M055AC

OMO.#: OMO-CGB3B1X5R1C225M055AC-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 2.2UF 16V 20% 0603
NSBC114YDXV6T1G

Mfr.#: NSBC114YDXV6T1G

OMO.#: OMO-NSBC114YDXV6T1G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
Disponibilidad
Valores:
Available
En orden:
1990
Ingrese la cantidad:
El precio actual de NSBC114YDXV6T5G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,35 US$
0,35 US$
10
0,27 US$
2,66 US$
100
0,14 US$
14,40 US$
1000
0,11 US$
108,00 US$
2500
0,09 US$
232,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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