MRF8HP21130HSR3

Mfr. #:: MRF8HP21130HSR3
Fabricante:: NXP / Freescale
Descripción:: RF MOSFET Transistors HV8 2.1GHZ 130W NI780S-4
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: MRF8HP21130HSR3 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: NXP

Categoria de producto:: Transistores RF MOSFET

RoHS:: Y

Polaridad del transistor:: Canal N

Tecnología:: Si

Vds - Voltaje de ruptura de drenaje-fuente:: 65 V

Ganar:: 14.2 dB

Potencia de salida:: 28 W

Temperatura máxima de funcionamiento:: + 150 C

Estilo de montaje:: SMD / SMT

Paquete / Caja:: NI-780S-4

Embalaje:: Carrete

Configuración:: Único

Frecuencia de operación:: 2.11 GHz to 2.17 GHz

Serie:: MRF8HP21130H

Marca:: NXP / Freescale

Tipo de producto:: Transistores RF MOSFET

Cantidad de paquete de fábrica:: 250

Subcategoría:: MOSFET

Vgs - Voltaje puerta-fuente:: 10 V

Vgs th - Voltaje umbral puerta-fuente:: 2.7 V

Unidad de peso:: 0.231270 oz

Tags: MRF8HP21130HS, MRF8HP211, MRF8H, MRF8, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF8HP21130HSR3 Descripción

***escale Semiconductor: W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V

***ical: Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R

*** Electronic Components: RF MOSFET Transistors HV8 2.1GHZ 130W NI780S-4

***el Electronic: Gate Drivers INTEGRATED DRIVER MOSFET

***or: FET RF 2CH 65V 2.17GHZ NI780S-4

***ure Electronics: N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA

***emi: N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

***ment14 APAC: MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance

***roFlash: Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3

***ical: Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R

***nsix Microsemi: Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***emi: N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

***ure Electronics: N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA

***r Electronics: Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, LOGIC, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:40W; Pulse Current Idm:20A; SMD Marking:RFD14N05; Termination Type:SMD; Voltage Vds Typ:50V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***rchild Semiconductor: These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

***(Formerly Allied Electronics): IRLR014PBF N-channel MOSFET Transistor, 7.7 A, 60 V, 3-Pin DPAK

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - TO-252

***nell: MOSFET, N, 60V, 7.7A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.7A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 25W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D-PAK; Current Id Max: 7.7A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 0°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 31A; SMD Marking: IRLR014; Voltage Vds: 60V; Voltage Vds Typ: 60V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 5V; Voltage Vgs th Max: 2V

***(Formerly Allied Electronics): IRLR014TRPBF N-channel MOSFET Transistor; 7.7 A; 60 V; 3-Pin TO-252

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - DPAK (TO-252)

***ark: N CHANNEL MOSFET, 60V, 7.7A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***emi: N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ

***ure Electronics: N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA

***r Electronics: Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: N CHANNEL MOSFET, 50V, 14mA; Transistor; N CHANNEL MOSFET, 50V, 14mA; Transistor Polarity:N Channel; Continuous Drain Current Id:14mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V

***rchild Semiconductor: These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
MRF8HP21130HSR3 DISTI # V36:1790_19197355	NXP Semiconductors	Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R	4586	2500:$9.4600 1000:$9.5800 500:$9.6900 250:$9.8100
MRF8HP21130HSR3 DISTI # MRF8HP21130HSR3-ND	NXP Semiconductors	FET RF 2CH 65V 2.17GHZ NI780S-4 RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Limited Supply - Call
MRF8HP21130HSR3 DISTI # 30308706	NXP Semiconductors	Trans RF MOSFET N-CH 65V 5-Pin Case 465H-02 T/R	4500	2500:$9.4600 1000:$9.5800 500:$9.6900 250:$9.8100
MRF8HP21130HSR3 DISTI # MRF8HP21130HSR3	Avnet, Inc.	HV8 2.1GHZ 130W NI780S-4 - Bulk (Alt: MRF8HP21130HSR3) Min Qty: 5 Container: Bulk	Americas - 0	50:$69.0900 25:$70.3900 15:$73.0900 10:$75.9900 5:$79.0900
MRF8HP21130HSR3	Freescale Semiconductor	RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	1985	1000:$71.4900 500:$75.2500 100:$78.3400 25:$81.7000 1:$87.9800

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: MRF8HP21080HR3 OMO.#: OMO-MRF8HP21080HR3	RF MOSFET Transistors HV8 2.1GHZ 160W NI780H-4
	Mfr.#: MRF8HP21080HSR3 OMO.#: OMO-MRF8HP21080HSR3	RF MOSFET Transistors HV8 2.1GHZ 160W NI780S-4
	Mfr.#: MRF8HP21080HR5 OMO.#: OMO-MRF8HP21080HR5	RF MOSFET Transistors HV8 2.1GHZ 160W NI780H-4
	Mfr.#: MRF8HP21130HSR5 OMO.#: OMO-MRF8HP21130HSR5-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780S-4
	Mfr.#: MRF8HP21080HR5 OMO.#: OMO-MRF8HP21080HR5-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780-4
	Mfr.#: MRF8HP21130HS OMO.#: OMO-MRF8HP21130HS-1190	Nuevo y original
	Mfr.#: MRF8HP21130HR3 OMO.#: OMO-MRF8HP21130HR3-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780-4
	Mfr.#: MRF8HP21130HSR3 OMO.#: OMO-MRF8HP21130HSR3-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780S-4
	Mfr.#: MRF8HP21080HR3 OMO.#: OMO-MRF8HP21080HR3-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780-4
	Mfr.#: MRF8HP21080HSR3 OMO.#: OMO-MRF8HP21080HSR3-NXP-SEMICONDUCTORS	FET RF 2CH 65V 2.17GHZ NI780S-4

Disponibilidad

Valores:: Available
En orden:: 3500
Ingrese la cantidad:

El precio actual de MRF8HP21130HSR3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Empezar con

MRF8HP21130HS 3
MRF8HP211 5
MRF8H 8
MRF8 270
MRF 2307

Nuevos productos

PCAL6524HE I/O Expander

NXP’s PCAL6524 is a 24-bit I/O expander that provides remote I/O expansion for most microcontroller families via the Fast-mode Plus (Fm+) I²C bus interface.
Compare MRF8HP21130HSR3

MRF8HP21130HS vs MRF8HP21130HSR3 vs MRF8HP21130HSR5
LS1046A/LS2084A/LS2088A Layerscape® Microproc

NXP Semiconductors' Layerscape LS1046A, LS2084A, and LS2088A, based on Arm Cortex-A72 processors, provide high-performance options for various applications.
LPC11U USB Microcontrollers

Delivering robust USB performance at a low cost, the LPC11U Cortex-M0 USB devices from NXP are compelling replacements for 8- and 16-bit USB MCUs.
FRDM-KL26Z

FRDM-KL26Z is an ultra-low-cost development platform for Kinetis L series KL16 and KL26 MCUs built on ARM® Cortex™-M0+ processors.
FRWY-LS1046A Evaluation Board and Kit

NXP's Freeway LS1046A is a high-performance, low-cost edge computing platform based on the QorIQ® LS1046A quad-core 64-bit processor.

More Newest Products

MRF8HP21130HSR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes