FS35R12W1T4BOMA1

FS35R12W1T4BOMA1
Mfr. #:
FS35R12W1T4BOMA1
Fabricante:
Infineon Technologies
Descripción:
IGBT MODULE 1200V 35A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FS35R12W1T4BOMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FS35R12W, FS35R, FS35, FS3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1200V 65A 225000mW 18-Pin EASY1B-1 Tray
***ment14 APAC
IGBT, LOW POW, 1200V, 35A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:225W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:225W
***ineon
EasyPACK 1B 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon; ups
Parte # Mfg. Descripción Valores Precio
FS35R12W1T4BOMA1
DISTI # V99:2348_17562481
Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 65A 18-Pin Tray
RoHS: Compliant
0
  • 24000:$32.1700
  • 12000:$32.1800
  • 2400:$33.9800
  • 240:$38.1400
  • 24:$38.8900
FS35R12W1T4BOMA1
DISTI # V36:1790_17562481
Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 65A 18-Pin Tray
RoHS: Compliant
0
  • 24000:$30.4500
  • 12000:$30.4600
  • 2400:$32.6700
  • 240:$37.9300
  • 24:$38.8900
FS35R12W1T4BOMA1
DISTI # FS35R12W1T4BOMA1-ND
Infineon Technologies AGIGBT MODULE 1200V 35A
RoHS: Compliant
Min Qty: 1
Container: Bulk
On Order
  • 10:$35.7510
  • 1:$38.3200
FS35R12W1T4BOMA1
DISTI # FS35R12W1T4BOMA1
Infineon Technologies AGLOW POWER EASY - Trays (Alt: FS35R12W1T4BOMA1)
RoHS: Compliant
Min Qty: 24
Container: Tray
Americas - 0
  • 240:$25.6900
  • 144:$26.3900
  • 96:$26.9900
  • 48:$27.7900
  • 24:$28.0900
FS35R12W1T4BOMA1
DISTI # 13AC8756
Infineon Technologies AGTRANSISTOR, IGBT MODULE, 1.2KV, 65A,Transistor Polarity:N Channel,DC Collector Current:65A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:225W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes17
  • 250:$26.6300
  • 100:$27.5300
  • 50:$28.1300
  • 25:$30.1600
  • 10:$32.0500
  • 5:$33.9100
  • 1:$35.7400
FS35R12W1T4
DISTI # 641-FS35R12W1T4
Infineon Technologies AGIGBT Modules N-CH 1.2KV 65A
RoHS: Compliant
60
  • 1:$38.3100
  • 5:$37.4600
  • 10:$35.7500
  • 25:$34.2500
FS35R12W1T4BOMA1
DISTI # 2726186
Infineon Technologies AGTRANSISTOR, IGBT MODULE, 1.2KV, 65A
RoHS: Compliant
17
  • 10:$54.5600
  • 1:$58.4800
FS35R12W1T4BOMA1
DISTI # 2726186
Infineon Technologies AGTRANSISTOR, IGBT MODULE, 1.2KV, 65A17
  • 10:£30.2300
  • 5:£31.3200
  • 1:£32.4100
FS35R12W1T4BOMA1
DISTI # FS35R12W1T4
Infineon Technologies AGIGBT-Sixpack 1200V 65A EASY1B-1
RoHS: Compliant
20
  • 1:€37.1000
  • 3:€31.1000
  • 10:€28.1000
  • 20:€27.0800
Imagen Parte # Descripción
FS35R12W1T4

Mfr.#: FS35R12W1T4

OMO.#: OMO-FS35R12W1T4

IGBT Modules N-CH 1.2KV 65A
FS35R12W1T4_B11

Mfr.#: FS35R12W1T4_B11

OMO.#: OMO-FS35R12W1T4-B11

IGBT Modules IGBT Module 35A 1200V
FS35R12W1T4BOMA1

Mfr.#: FS35R12W1T4BOMA1

OMO.#: OMO-FS35R12W1T4BOMA1-INFINEON-TECHNOLOGIES

IGBT MODULE 1200V 35A
FS35R12W1T4-B11

Mfr.#: FS35R12W1T4-B11

OMO.#: OMO-FS35R12W1T4-B11-1190

Nuevo y original
FS35R12W1T4_B11

Mfr.#: FS35R12W1T4_B11

OMO.#: OMO-FS35R12W1T4-B11-125

IGBT Modules IGBT Module 35A 1200V
FS35R12W1T4

Mfr.#: FS35R12W1T4

OMO.#: OMO-FS35R12W1T4-125

IGBT Modules N-CH 1.2KV 65A
FS35R12W1T4B11BOMA1

Mfr.#: FS35R12W1T4B11BOMA1

OMO.#: OMO-FS35R12W1T4B11BOMA1-INFINEON-TECHNOLOGIES

MOD IGBT LOW PWR EASY1B-2
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de FS35R12W1T4BOMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
39,94 US$
39,94 US$
10
37,95 US$
379,48 US$
100
35,95 US$
3 595,05 US$
500
33,95 US$
16 976,65 US$
1000
31,96 US$
31 956,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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