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MWE6IC9100NR1

MWE6IC9100NR1
Mfr. #:
MWE6IC9100NR1
Fabricante:
NXP / Freescale
Descripción:
RF Amplifier 100W 26V GSM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MWE6IC9100NR1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Amplificador de RF
RoHS:
E
Estilo de montaje:
SMD / SMT
Escribe:
Amplificador de poder
Frecuencia de operación:
869 MHz to 960 MHz
Ganar:
33.5 dB
Temperatura máxima de funcionamiento:
+ 200 C
Embalaje:
Carrete
Marca:
NXP / Freescale
Número de canales:
1 Channel
Pérdida de retorno de entrada:
15 dB
Sensible a la humedad:
Yes
Tipo de producto:
Amplificador de RF
Cantidad de paquete de fábrica:
500
Subcategoría:
Circuitos integrados inalámbricos y RF
Voltaje de suministro - Máx:
32 V
Voltaje de suministro - Min:
26 V
Unidad de peso:
0.058255 oz
Tags
MWE6IC9100N, MWE6IC91, MWE6I, MWE6, MWE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
RF Amp Module Single Power Amp 960MHz 32V 15-Pin TO-270 W T/R
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GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 1990 MHz, 100 W, 28 V
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RF Amp Chip Single Power Amp 2.05GHz 32V 14-Pin TO-270 WB EP T/R
***ponent Stockers USA
1805 MHz - 2050 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 32 W Avg., 28 V
***et
RF Amp Chip Dual Power Amp 2.17GHz 32V 15-Pin TO-270 W GULL T/R
***i-Key
IC PWR AMP RF 2170MHZ TO-270-14
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
***W
Amplifier,1880 to 2025 MHz, 60 W, Typ Gain in dB is 30.5 @ 2025 MHz, 28 V, LDMOS, SOT1720
***ical
RF Amp Module Dual GP Amp 2.05GHz 32V 14-Pin TO-270 WB T/R
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V
***ical
RF Amp Module Dual GP Amp 2.05GHz 32V 14-Pin(12+2Tab) TO-270 WB GULL T/R
***W
Amplifier,1880 to 2025 MHz, 60 W, Typ Gain in dB is 30.5 @ 2025 MHz, 28 V, LDMOS, SOT1720
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 5.3 W Avg., 28 V
***ical
RF Amp Module Single Power Amp 2.17GHz 32V 15-Pin TO-270 W T/R
***i-Key
IC AMP PWR RF 2100MHZ TO270-14
***ponent Stockers USA
TELECOM CELLULAR RF AND BASEBAND CIRCUIT PDFM14
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 1.3 W Avg., 28 V
***et
RF Amp Chip Dual Power Amplifier 2170MHz 32V 14-Pin TO-270WB T/R
***W
Amplifier,1805 to 2170 MHz, 12 W, Typ Gain in dB is 31.5 @ 2170 MHz, 28 V, LDMOS, SOT1720
***p One Stop Global
RF Amp Module Dual Power Amp 2.17GHz 32V 15-Pin TO-270 W GULL T/R
Parte # Mfg. Descripción Valores Precio
MWE6IC9100NR1
DISTI # MWE6IC9100NR1-ND		NXP SemiconductorsIC RF AMP GSM 960MHZ TO270 WB-14
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Limited Supply - Call
    MWE6IC9100NR1
    DISTI # MWE6IC9100NR1    		Avnet, Inc.RF Amp Module Single Power Amp 960MHz 32V 15-Pin TO-270 W T/R - Bulk (Alt: MWE6IC9100NR1)
    Min Qty: 6
    Container: Bulk    		Americas - 0
    • 60:$58.0900
    • 30:$59.1900
    • 18:$61.4900
    • 12:$63.9900
    • 6:$66.5900
    MWE6IC9100NR1
    DISTI # 841-MWE6IC9100NR1    		NXP SemiconductorsRF Amplifier 100W 26V GSM
    RoHS: Compliant    		0
      MWE6IC9100NR1Freescale SemiconductorNarrow Band High Power Amplifier, 869MHz Min, 960MHz Max
      RoHS: Compliant      		149
      • 1000:$60.1600
      • 500:$63.3200
      • 100:$65.9300
      • 25:$68.7500
      • 1:$74.0400
      Imagen Parte # Descripción
      MWE6IC9080NR1

      Mfr.#: MWE6IC9080NR1

      OMO.#: OMO-MWE6IC9080NR1

      		 RF Amplifier HV6E 900MHZ TO270WB14
      MWE6IC9100NBR1

      Mfr.#: MWE6IC9100NBR1

      OMO.#: OMO-MWE6IC9100NBR1

      		 RF Amplifier 100W 26V GSM
      MWE6IC9100NR1

      Mfr.#: MWE6IC9100NR1

      OMO.#: OMO-MWE6IC9100NR1

      		 RF Amplifier 100W 26V GSM
      MWE6IC9080NB

      Mfr.#: MWE6IC9080NB

      OMO.#: OMO-MWE6IC9080NB-1190

      		 Nuevo y original
      MWE6IC9080NR1

      Mfr.#: MWE6IC9080NR1

      OMO.#: OMO-MWE6IC9080NR1-NXP-SEMICONDUCTORS

      		 IC AMP GSM 865MHZ-960MHZ TO270
      MWE6IC9100GNR1

      Mfr.#: MWE6IC9100GNR1

      OMO.#: OMO-MWE6IC9100GNR1-NXP-SEMICONDUCTORS

      		 IC RF AMP GSM 960MHZ TO270 WB-14
      MWE6IC9100GNR5

      Mfr.#: MWE6IC9100GNR5

      OMO.#: OMO-MWE6IC9100GNR5-1190

      		 Nuevo y original
      MWE6IC9100NB

      Mfr.#: MWE6IC9100NB

      OMO.#: OMO-MWE6IC9100NB-1190

      		 Nuevo y original
      MWE6IC9080NBR1

      Mfr.#: MWE6IC9080NBR1

      OMO.#: OMO-MWE6IC9080NBR1-NXP-SEMICONDUCTORS

      		 RF Amplifier HV6E 900MHZ TO272WB14
      MWE6IC9080GNR1

      Mfr.#: MWE6IC9080GNR1

      OMO.#: OMO-MWE6IC9080GNR1-NXP-SEMICONDUCTORS

      		 RF Amplifier HV6E 900MHZ TO270WB14G
      Disponibilidad
      Valores:
      Available
      En orden:
      3500
      Ingrese la cantidad:
      El precio actual de MWE6IC9100NR1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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