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MSD42T1G

MSD42T1G
Mfr. #:
MSD42T1G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT SS XSTR HV 300V TR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MSD42T1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MSD42T1G DatasheetMSD42T1G Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SC-70-3
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
300 V
Colector- Voltaje base VCBO:
300 V
Emisor- Voltaje base VEBO:
6 V
Corriente máxima del colector de CC:
0.15 A
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
MSD42
Altura:
1.2 mm
Longitud:
3.1 mm
Embalaje:
Carrete
Ancho:
1.7 mm
Marca:
EN Semiconductor
Colector de CC / Ganancia base hfe Min:
25
Pd - Disipación de energía:
150 mW
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
3000
Subcategoría:
Transistores
Unidad de peso:
0.000219 oz
Tags
MSD42, MSD4, MSD
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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BIPOLAR TRANSISTOR, NPN, 300V; Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:150mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
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BIPOLAR TRANSISTOR, NPN, 300V; Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:150mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
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Transistor, NPN, 300V, 0.15A, SC-70; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation
***th Star Micro
This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
***ark
BIPOLAR TRANSISTOR, NPN, 300V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:150mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:-RoHS Compliant: Yes
***nell
TRANSISTOR, NPN, 300V, 0.15A, SC-70; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: -; Power Dissipation Pd: 450mW; DC Collector Current: 150mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SC-70; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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Complementary Bipolar Digital Transistor (BRT)
***ark
Digital Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:10Kohm; Resistor Ratio, R1 / R2:0.47(Ratio) Rohs Compliant: Yes
***th Star Micro
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series two complementary BRT devices are housed in the SOT-353 package which is ideal for low power surface mount applications where board space is at a premium.
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***ark
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1/R2:0.47 ;RoHS Compliant: Yes
***nell
TRANS NPN W/RES SOT-416; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 60hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Current Ic Continuous a Max: 10mA; Hfe Min: 60; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: General Purpose
***ark
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-75 T/R
***peria
PDTC144T series - NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = open
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STANDARD MARKING * REEL PACK, SMD, 7'
Parte # Mfg. Descripción Valores Precio
MSD42T1G
DISTI # 26961450		ON SemiconductorTrans GP BJT NPN 300V 0.15A Automotive 3-Pin SC-59 T/R
RoHS: Compliant		24000
  • 150000:$0.0209
  • 75000:$0.0220
  • 30000:$0.0234
  • 24000:$0.0249
MSD42T1G
DISTI # MSD42T1GOSCT-ND		ON SemiconductorTRANS NPN 300V 0.15A SC-59
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11980In Stock
  • 1000:$0.0452
  • 500:$0.0665
  • 100:$0.1011
  • 10:$0.1910
  • 1:$0.2300
MSD42T1G
DISTI # MSD42T1GOSDKR-ND		ON SemiconductorTRANS NPN 300V 0.15A SC-59
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11980In Stock
  • 1000:$0.0452
  • 500:$0.0665
  • 100:$0.1011
  • 10:$0.1910
  • 1:$0.2300
MSD42T1G
DISTI # MSD42T1GOSTR-ND		ON SemiconductorTRANS NPN 300V 0.15A SC-59
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 150000:$0.0230
  • 75000:$0.0258
  • 30000:$0.0276
  • 15000:$0.0293
  • 6000:$0.0344
  • 3000:$0.0396
MSD42T1G
DISTI # MSD42T1G		ON SemiconductorTrans GP BJT NPN 300V 0.15A 3-Pin SC-59 T/R - Tape and Reel (Alt: MSD42T1G)
RoHS: Compliant
Min Qty: 24000
Container: Reel		Americas - 0
  • 24000:$0.0214
  • 30000:$0.0213
  • 54000:$0.0210
  • 120000:$0.0208
  • 240000:$0.0203
MSD42T1G
DISTI # 45J1703		ON SemiconductorBIPOLAR TRANSISTOR, NPN, 300V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:300V,Power Dissipation Pd:150mW,DC Collector Current:150mA,DC Current Gain hFE:40hFE,No. of Pins:3Pins,MSL:MSL 1 - Unlimited RoHS Compliant: Yes0
  • 1:$0.2230
  • 50:$0.1500
  • 100:$0.0650
  • 250:$0.0630
  • 500:$0.0610
  • 1000:$0.0310
  • 24000:$0.0300
  • 48000:$0.0280
MSD42T1G
DISTI # 863-MSD42T1G		ON SemiconductorBipolar Transistors - BJT SS XSTR HV 300V TR
RoHS: Compliant		10340
  • 1:$0.2200
  • 10:$0.1480
  • 100:$0.0620
  • 1000:$0.0420
  • 3000:$0.0330
  • 9000:$0.0280
  • 24000:$0.0270
  • 45000:$0.0250
MSD42T1GON Semiconductor 
RoHS: Not Compliant		1804000
  • 1:$0.0300
  • 25:$0.0300
  • 100:$0.0300
  • 500:$0.0300
  • 1000:$0.0300
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Disponibilidad
Valores:
Available
En orden:
1993
Ingrese la cantidad:
El precio actual de MSD42T1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,22 US$
0,22 US$
10
0,15 US$
1,48 US$
100
0,06 US$
6,20 US$
1000
0,04 US$
42,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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