NIF62514T1G

NIF62514T1G
Mfr. #:
NIF62514T1G
Fabricante:
ON Semiconductor
Descripción:
MOSFET 42V 6A N-Channel
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NIF62514T1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NIF62514T1G DatasheetNIF62514T1G Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-223-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
6 A
Rds On - Resistencia de la fuente de drenaje:
90 mOhms
Vgs - Voltaje puerta-fuente:
16 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
8.93 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.57 mm
Longitud:
6.5 mm
Serie:
NIF62514
Tipo de transistor:
1 N-Channel
Ancho:
3.5 mm
Marca:
EN Semiconductor
Otoño:
27 us
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Hora de levantarse:
11 us
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
32 us
Tiempo típico de retardo de encendido:
4 us
Unidad de peso:
0.008818 oz
Tags
NIF62514T, NIF62, NIF6, NIF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET N-Ch 40V 6A Self-Protected SOT223
***ical
Trans MOSFET N-CH 40V 4-Pin(3+Tab) SOT-223 T/R
***ark
N Channel Mosfet, 40V, 6A, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.09Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
SMART MOSFET, N, 42V, 1.73W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:300mJ; Clamping Voltage Vc Max:40V; Current Id Max:6A; Package / Case:SOT-223; Pin Configuration:1(G),2(D),3(S), 4-TAB(D); Power Dissipation Pd:1.1W; Power Dissipation Pd:8.93W; Shutdown Temperature:175°C; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:16VDC; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
Parte # Mfg. Descripción Valores Precio
NIF62514T1G
DISTI # V36:1790_07501447
ON SemiconductorTrans MOSFET N-CH Si 40V 4-Pin(3+Tab) SOT-223 T/R
RoHS: Compliant
0
    NIF62514T1G
    DISTI # NIF62514T1GOSTR-ND
    ON SemiconductorMOSFET N-CH HD+ 6A 40V SOT223
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    Limited Supply - Call
      NIF62514T1G
      DISTI # NIF62514T1GOSCT-ND
      ON SemiconductorMOSFET N-CH HD+ 6A 40V SOT223
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      Limited Supply - Call
        NIF62514T1G
        DISTI # NIF62514T1GOSDKR-ND
        ON SemiconductorMOSFET N-CH HD+ 6A 40V SOT223
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®
        Limited Supply - Call
          NIF62514T1G
          DISTI # 42K2247
          ON SemiconductorMOSFET Transistor, N Channel, 6 A, 40 V, 0.09 ohm, 10 V, 1.7 V RoHS Compliant: Yes0
            NIF62514T1G
            DISTI # 54T9968
            ON SemiconductorN CHANNEL MOSFET, 40V, 6A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.09ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Product Range:-RoHS Compliant: Yes0
              NIF62514T1G
              DISTI # 863-NIF62514T1G
              ON SemiconductorMOSFET 42V 6A N-Channel
              RoHS: Compliant
              0
                NIF62514T1GON Semiconductor 2426
                  NIF62514T1GON Semiconductor 629
                    NIF62514T1GON SemiconductorSelf-protected FET with Temperature and Current Limit500
                    • 1:$0.8700
                    • 100:$0.8700
                    • 500:$0.8700
                    • 1000:$0.8700
                    Imagen Parte # Descripción
                    NIF62514T1G

                    Mfr.#: NIF62514T1G

                    OMO.#: OMO-NIF62514T1G

                    MOSFET 42V 6A N-Channel
                    NIF62514

                    Mfr.#: NIF62514

                    OMO.#: OMO-NIF62514-1190

                    Nuevo y original
                    NIF62514T

                    Mfr.#: NIF62514T

                    OMO.#: OMO-NIF62514T-1190

                    Nuevo y original
                    NIF62514T1

                    Mfr.#: NIF62514T1

                    OMO.#: OMO-NIF62514T1-ON-SEMICONDUCTOR

                    MOSFET N-CH 40V 6A SOT223
                    NIF62514T1G

                    Mfr.#: NIF62514T1G

                    OMO.#: OMO-NIF62514T1G-ON-SEMICONDUCTOR

                    MOSFET N-CH HD+ 6A 40V SOT223
                    NIF62514T3G

                    Mfr.#: NIF62514T3G

                    OMO.#: OMO-NIF62514T3G-ON-SEMICONDUCTOR

                    IC FET VOLT CLAMP 6A 40V SOT-223
                    Disponibilidad
                    Valores:
                    Available
                    En orden:
                    1000
                    Ingrese la cantidad:
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