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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI3447BDV-T1-GE3 DISTI # SI3447BDV-T1-GE3-ND | Vishay Siliconix | MOSFET P-CH 12V 4.5A 6-TSOP Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI3447BDV-T1-GE3 DISTI # 26R1868 | Vishay Intertechnologies | P CHANNEL MOSFET, -12V, 4.5A,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.5A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:1V,No. of Pins:6PinsRoHS Compliant: Yes RoHS: Compliant | 0 | |
| SI3447BDV-T1-GE3 DISTI # 1871348 | Vishay Intertechnologies | P CHANNEL MOSFET, -12V, 4.5A RoHS: Compliant | 0 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI3447BDV-T1-GE3 OMO.#: OMO-SI3447BDV-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SI3493DDV-T1-GE3 |
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Mfr.#: SI3447BDV-T1-E3 OMO.#: OMO-SI3447BDV-T1-E3-VISHAY |
IGBT Transistors MOSFET 12V 5.2A 2W |
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Mfr.#: SI3447BDV OMO.#: OMO-SI3447BDV-1190 |
Nuevo y original |
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Mfr.#: SI3447BDV-T1 OMO.#: OMO-SI3447BDV-T1-1190 |
Nuevo y original |
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Mfr.#: SI3447BDV-T1-GE3 OMO.#: OMO-SI3447BDV-T1-GE3-VISHAY |
MOSFET P-CH 12V 4.5A 6-TSOP |